A5101652047- ZnO doping and properties
- Nanowire Synthesis and Applications
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Gas Sensing Nanomaterials and Sensors
- Silicon Nanostructures and Photoluminescence
- Graphene research and applications
- Advancements in Semiconductor Devices and Circuit Design
- Carbon Nanotubes in Composites
- Advanced MEMS and NEMS Technologies
- Nanopore and Nanochannel Transport Studies
- Analytical Chemistry and Sensors
- Solar Radiation and Photovoltaics
- Diamond and Carbon-based Materials Research
- Advanced Chemical Sensor Technologies
- Copper-based nanomaterials and applications
- Ga2O3 and related materials
- Transition Metal Oxide Nanomaterials
- Quantum Dots Synthesis And Properties
- Electronic Packaging and Soldering Technologies
- Conducting polymers and applications
- Advanced Surface Polishing Techniques
- Membrane Separation Technologies
University of Tehran
2011-2022
Islamic Azad University Central Tehran Branch
2021
Perovskite solar cells (PSCs) have been able to raise new hopes for a revolution in cell technology. However, there are many challenges which need be resolved order reveal the true potential of this An issue should addressed designing PSCs is metal-hole transporting material (HTM) contact’s property. One most promising inorganic HTMs Nickel oxide. Although NiO has extensively studied literature, best our knowledge metal-NiO junctions never experimentally. In work, contacts investigated...
We propose a new structure called side-contacted field-effect diode (FED). The fabrication of this is simple, and it offers good electrical characteristics. Furthermore, comprehensive analysis FEDs presented. effect heavy-doping-induced band-gap narrowing on the performance investigated. Our results show that calculated <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> /...
In this paper, the previously proposed side-contacted field effect diode (FED) is carefully studied and its characteristic compared against that of a modified FED metal oxide semiconductor transistor (MOSFET). The influences body thickness, each gate length access resistance are investigated. figures merit including intrinsic delay time energy-delay product, which represent speed switching energy device, respectively, studied. Our results highlight FEDs good candidates for obtaining high...
In this paper we present the fabrication of cadmium telluride (CdTe) nanostructures by means RF magnetron sputtering followed low-energy ion implantation and post-thermal treatment. We have thoroughly studied structural, optical, morphological properties these nanostructures. The effects nitrogen bombardment on structural parameters CdTe such as crystal size, microstrain, dislocation density been examined. From x-ray diffractometer (XRD) analysis it could be deduced that N+ fluence annealing...
Due to their tunable properties, silicon nano-crystals (NC) are currently being investigated. Quantum confinement can generally be employed for size-dependent band-gap tuning at dimensions smaller than the Bohr radius (∼5 nm silicon). At nano-meter scale, however, increased surface-to-volume ratio makes surface effects dominant. Specifically, in Si-SiO2 core-shell semiconductor NCs interfacial transition layer causes peculiar electronic and optical because of co-existence intermediate...
Anisotropic etching of silicon is achieved in the presence ultra-violet exposure a solution containing hydrofluoric/nitric/acetic acids (HNA). The HNA typically used for polishing and polysilicon due to its isotropic property. In technique proposed this paper which called UV-HNA, enhanced direction determined by UV exposure. A mixture HF/HNO3/CH3COOH with relative composition 1:15:5 seems suitable revealing 〈111〉 planes an etch rate 10 μm/h at 35 °C. bottom etched craters hillock-free rates...
Cu-Mo and Cu-Ti contact structures were fabricated on multi-crystal line silicon substrates to provide a low resistance ohmic contact. Deposition steps are done in an excellent vacuum chamber by means of electron beam evaporation samples then annealed for the realization efficient alloy layer. The effects process parameters such as film thickness, annealing duration temperature quality have been investigated optimized achieving best special resistivity. specific obtained 8.58×10 -6 Ω-cm 2...