A5038152741- Photonic and Optical Devices
- Semiconductor Quantum Structures and Devices
- Semiconductor Lasers and Optical Devices
- Quantum Information and Cryptography
- Photonic Crystals and Applications
- Quantum optics and atomic interactions
- Plasmonic and Surface Plasmon Research
- Advanced Photonic Communication Systems
- Neural Networks and Reservoir Computing
- Silicon Nanostructures and Photoluminescence
- Optical Network Technologies
- Mechanical and Optical Resonators
- Quantum and electron transport phenomena
- Quantum Dots Synthesis And Properties
- Atomic and Subatomic Physics Research
- Optical Coatings and Gratings
- Cold Atom Physics and Bose-Einstein Condensates
- Near-Field Optical Microscopy
- Advanced Fiber Optic Sensors
- Strong Light-Matter Interactions
- Nanowire Synthesis and Applications
- Quantum Computing Algorithms and Architecture
- Advanced Fluorescence Microscopy Techniques
- Advanced Semiconductor Detectors and Materials
- Gold and Silver Nanoparticles Synthesis and Applications
Center for Integrated Quantum Science and Technology
2016-2024
University of Stuttgart
2015-2024
University of Bayreuth
2023
Centre National de la Recherche Scientifique
2013-2016
Université Paris-Saclay
2016
Laboratoire Photonique, Numérique et Nanosciences
2015
University of Pavia
2009-2014
Institute for Microelectronics and Microsystems
2011
University of St Andrews
2011
National Interuniversity Consortium for the Physical Sciences of Matter
2009-2011
The authors show that light scattering from high-Q planar photonic crystal nanocavities can display Fano-like resonances corresponding to the excitation of localized cavity modes. By changing conditions, we are able tune observed lineshapes strongly asymmetric and dispersivelike symmetric Lorentzians. Results interpreted according Fano model quantum interference between two coupled channels. Combined measurements line shape analysis on a series silicon L3 as function nearby hole displacement...
Different types of planar photonic crystal cavities aimed at optimizing the far-field emission pattern are designed and experimentally assessed by resonant scattering measurements. We systematically investigate interplay between achieving highest possible quality (Q) factor maximizing in- out-coupling efficiency into a narrow cone. Cavities operate telecommunications wavelengths, i.e. around approximately 1.55 microm, realized in silicon membranes. A strong modification pattern, therefore...
The scalability of a quantum network based on semiconductor dots lies in the possibility having an electrical control dot state as well controlling its spontaneous emission. technological challenge is then to define contacts photonic microstructures optimally coupled single emitter. Here we present novel structure and technology allowing deterministic implementation for microcavity. device consists micropillar connected planar cavity through one-dimensional wires; confined optical modes are...
By metal-organic vapor-phase epitaxy, we have fabricated InAs quantum dots (QDs) on InGaAs/GaAs metamorphic buffer layers a GaAs substrate with area densities that allow addressing single dots. The photoluminescence emission from the is shifted to telecom C-band at 1.55 μm high yield due reduced stress in lowered residual strain surface of layer results lattice mismatch between dot material and growth surface. exhibit resolution-limited linewidths (mean value: 59 μeV) low fine-structure...
Quantum cryptography harnesses quantum light, in particular single photons, to provide security guarantees that cannot be reached by classical means. For each cryptographic task, the feature of interest is directly related photons' non-classical properties. dot-based single-photon sources are remarkable candidates, as they can principle emit deterministically, with high brightness and low multiphoton contribution. Here, we show these additional benefits, thanks tunability coherence emitted...
Abstract Several emission features mark semiconductor quantum dots as promising non‐classical light sources for prospective implementations. For long‐distance transmission and Si‐based on‐chip processing, the possibility to match telecom C‐band is decisive, while source brightness high single‐photon purity are key in virtually any implementation. An InAs/InGaAs/GaAs dot emitting coupled a circular Bragg grating presented here. This cavity structure stands out due its broadband collection...
A hybrid interface of solid-state single-photon sources and atomic quantum memories is a long sought-after goal in photonic technologies. Here, we demonstrate deterministic storage retrieval light from semiconductor dot an ensemble memory at telecommunications wavelengths. We store single photons indium arsenide high-bandwidth rubidium vapor–based memory, with total internal efficiency (12.9 ± 0.4)%. The signal-to-noise ratio the retrieved field 18.2 0.6, limited only by detector dark counts.
Abstract Quantum key distribution (QKD) enables the transmission of information that is secure against general attacks by eavesdroppers. The use on-demand quantum light sources in QKD protocols expected to help improve security and maximum tolerable loss. Semiconductor dots (QDs) are a promising building block for communication applications because deterministic emission single photons with high brightness low multiphoton contribution. Here we report on first intercity experiment using...
We demonstrate the emission of polarization-entangled photons from a single semiconductor quantum dot in telecom C-band (1530 nm–1565 nm). To reach this telecommunication window, well-established material system InAs dots embedded InGaAs barriers is utilized with an additional insertion metamorphic buffer to spectrally shift desired wavelengths. For observation photon pairs, biexciton-exciton cascade displaying intrinsically low fine-structure splitting investigated by means...
Silicon is now firmly established as a high performance photonic material. Its only weakness the lack of native electrically driven light emitter that operates CW at room temperature, exhibits narrow linewidth in technologically important 1300- 1600 nm wavelength window, small and with low power consumption. Here, an pumped all-silicon nano source around 1300-1600 range demonstrated temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon,...
Fully integrated quantum photonic circuits show a clear advantage in terms of stability and scalability compared to tabletop implementations. They will constitute fundamental breakthrough technologies, as matter example, simulation computation. Despite the fact that only few building blocks are strictly necessary, their simultaneous realization is highly challenging. This especially true for implementation all three key components on same chip: single-photon sources, logic, detectors. Here,...
Abstract Quantum mechanics promises to have a strong impact on many aspects of research and technology, improving classical analogues via purely quantum effects. A large variety tasks are currently under investigation, for example, the implementation computing, sensing, metrology, communication. From general perspective, in similar way as computing benefited by reduction device footprint, enabling realization highly complex chips, range applications will sensibly improve thanks successful...
Quantum dots in cavities have been shown to be very bright sources of indistinguishable single photons. Yet the quantum interference between two such dot sources, a critical step for photon-based computation, still needs investigated. Here, we report on measurement, taking advantage deterministic fabrication devices. We show that cavity electrodynamics can efficiently improve remote sources: Poorly photons interfere with good contrast high quality emitted by source strong Purcell regime. Our...
We demonstrate the simultaneous dressing of both vacuum-to-exciton and exciton-to-biexciton transitions a single semiconductor quantum dot in high-Q micropillar cavity, using photoluminescence spectroscopy. Resonant two-photon excitation biexciton is achieved by spectrally tuning emission with respect to cavity mode. The couples amplifies Rabi frequency likewise resonant continuous wave laser, driving transitions. observe strong-field splitting lines, which depend on field amplitude...
Abstract In the current study, we report on deterministic fabrication of solid immersion lenses (SILs) lithographically pre-selected semiconductor quantum dots (QDs). We demonstrate combination state-of-the-art low-temperature in-situ photolithography and femtosecond 3D direct laser writing. Several QDs are with a localization accuracy less than 2 nm lithography three-dimensional writing is then used to deterministically fabricate hemispherical top emitter submicrometric precision. Due...
The role of resonant pumping schemes in improving the photon coherence is investigated on InAs/InGaAs/GaAs quantum dots (QDs) emitting telecom C-band. linewidths transitions multiple exemplary are determined under above-band and resonance fluorescence (RF) via Fourier-transform spectroscopy scans, respectively. average linewidth reduced from (9.74 ± 3.3) GHz excitation to (3.50 0.39) RF underlining its superior properties. Furthermore, feasibility coherent state preparation with a fidelity...
The combination of semiconductor quantum dots with photonic cavities is a promising way to realize nonclassical light sources state-of-the-art performances regarding brightness, indistinguishability, and repetition rate. Here we demonstrate the coupling InGaAs/GaAs QDs emitting in telecom O-band circular Bragg grating cavity. We broadband geometric extraction efficiency enhancement by investigating two emission lines under above-band excitation, inside detuned from cavity mode, respectively....
Single photon emission from localized excitons in two-dimensional (2D) materials has been extensively investigated because of its relevance for quantum information applications. Prerequisites are the availability photons with high purity polarization and controllable orientation that can be integrated optical cavities. Here, deformation strain along edges prepatterned square-shaped substrate protrusions is exploited to induce quasi-one-dimensional (1D) WSe2 monolayers as an elegant way get...
Abstract Solid-state quantum emitters with manipulable spin-qubits are promising platforms for communication applications. Although such light-matter interfaces could be realized in many systems only a few allow light emission the telecom bands necessary long-distance networks. Here, we propose and implement an optically active solid-state spin-qubit based on hole confined single InAs/GaAs dot grown InGaAs metamorphic buffer layer emitting photons C-band. We lift spin-degeneracy using...
Abstract The GaAs-based material system is well-known for hosting InAs quantum dots (QDs) with outstanding optical properties, typically emitting at a wavelength of around 900 nm. insertion metamorphic buffer (MMB) can shift this emission to the technologically attractive telecom C-band range centered 1550 However, thickness common MMB designs (>1 μm) limits their compatibility most photonic resonator types. Here, we report on metal–organic vapor-phase epitaxy (MOVPE) growth novel InGaAs...
Long-range, terrestrial quantum networks require high-brightness single-photon sources emitting in the telecom C-band for maximum transmission rates. For solid-state emitters, underlying pumping process, i.e., coherent or incoherent excitation schemes, impacts several photon properties such as indistinguishability, purity, and number coherence. These play a major role communication applications, latter particular cryptography. Here, we present versatile source that is operated coherently...