A5007388369- Conducting polymers and applications
- Semiconductor materials and devices
- Advanced Sensor and Energy Harvesting Materials
- Organic Electronics and Photovoltaics
- Electronic and Structural Properties of Oxides
- Gas Sensing Nanomaterials and Sensors
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Graphene research and applications
- Integrated Circuits and Semiconductor Failure Analysis
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Carbon Nanotubes in Composites
- Microbial Inactivation Methods
- Supercapacitor Materials and Fabrication
- Photocathodes and Microchannel Plates
- Ferroelectric and Negative Capacitance Devices
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Tactile and Sensory Interactions
- Advanced Memory and Neural Computing
- Silicon and Solar Cell Technologies
- solar cell performance optimization
- Mechanical and Optical Resonators
- Insect Pest Control Strategies
Central Electronics Engineering Research Institute
2017-2024
Academy of Scientific and Innovative Research
2018-2024
Council of Scientific and Industrial Research
2018-2021
Indian Institute of Technology Kharagpur
2013-2015
Metal-catalyzed chemical vapor deposition (CVD) growth of graphene is one the most important techniques to produce high quality and large area films.
We report flexible piezo-resistive strain sensors composed of silver nanoparticle (Ag NP), graphene nanoplatelet (GNP), and multi walled carbon nanotube (MWCNT)-based ternary conductive hybrid nanocomposites as an active sensing layer fabricated using a simple solution processing method on polydimethylsiloxane (PDMS) substrates. The electrical characteristics have been studied in PDMS-based devices having three different kinds structures, namely Ag NPs/MWCNT/PDMS, GNP/PDMS NPs/GNP/PDMS....
The growing interest for power electronics devices demands suitable materials which can perform in harsh conditions. Gallium oxide () has shown tremendous potential high voltage, temperature, and gassensing applications due to its unique material properties. is considered be the next‐generation owing ultrawide bandgap of 4.5–4.9 eV electric field 8 MV cm −1 . These properties coupled with high‐power figure merits make a superior compared GaN SiC. Herein, state‐of‐the‐art development recent...
Carrier transport <italic>vis-a-vis</italic> leakage current in GaAs MOS capacitors with various structures; quantum dot embedded devices show the lowest leakage.
Size effect of MOCVD grown InAs QDs to use as charge storage nodes in non-volatile flash memory applications.
In this paper, the effect of microwave heat on nutritional characteristics affected red kidney beans, i.e., Rajma is studied. Evaluation crude protein content in heated beans are carried out using standard Kjeldahl method and Fourier transform infra-red (FTIR) spectroscopy. Red by Pulse Beetle (Callosobruchus chinensis) have been analyzed throughout experiments. The treatment samples undertaken a domestic oven at 2.45 GHz. different powers, such as 90, 270, 450, 750, 900 W, while exposure...
Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of QDs storage elements. The grown embedded between two high-k dielectric such HfO2 and ZrO2, which used for tunneling control oxide layers, respectively. size density found be 5 nm 1.8×1011 cm−2, device with a structure Metal/ZrO2/InAs...
We report flexible piezoresistive strain sensors containing two different layers of materials such as graphene and graphite, fabricated by a simple spin coating method on polydimethylsiloxane (PDMS) substrates. In-house synthesized graphite-PDMS nanocomposites are used active into the devices. The microstructure analysis composites carried out using scanning electron microscopy (SEM) technique. Small flakes having thickness 10-30 nm clearly seen from SEM images. Fundamental physical...