A5014092856- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
- Ga2O3 and related materials
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design
- Semiconductor materials and interfaces
Pennsylvania State University
2022-2024
This article reports on two generations of GaN-on-sapphire super-heterojunction (SHJ) transistors, aiming at the realization 10-kV class power transistors with low static and dynamic ON-resistance. First generation (Gen. 1) GaN SHJ-FETs used a single 2-D electron gas (2DEG) channel design Schottky gate. Experimental results indicated feasibility achieving blocking, however, room for improvement to reduce source-to-drain ON-resistance <inline-formula...
This letter reports the first controlled experimental study on impact of charge-balance static and dynamic characteristics GaN super-heterojunction Schottky barrier diodes (SHJ-SBD). Charge balance between p- n-type doped for reducing peak E-field can be optimized via etching (CBE) p-GaN SHJ region to improve <inline-formula> <tex-math notation="LaTeX">${R}_{\textit {ON}}$ </tex-math></inline-formula> degradation breakdown voltage (BV). Three CBE conditions were fabricated with same process...
Monolithic integration of photodetector and transimpedance amplifier is demonstrated for galvanically isolated control GaN power switches. The includes a bootstrapping comparator an optical receiver stage. features depletion-mode AlGaN/GaN high electron mobility transistors optimized speed input common mode range spanning from -1 to 8 V. delivers voltage gain up 176 V/V unity-gain bandwidth 3.58 MHz. Within the stage, exhibits photocurrent 50 100 nA when stimulated by 340 nm wavelength light...
This paper studies charge-balance effects in GaN super-heterojunction Schottky barrier diodes. Improvement design resulted the highest average E-field of 140 V/μm, scalable to over 10 kV. Large-periphery devices were fabricated, yielding an output current 0.72 A, a breakdown voltage 8.85 kV, and R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> CO(tr) product 6 ps. Forming p-type ohmic contact eliminated dynamic on-resistance...