Martin Kováč

ORCID: 0000-0003-0104-5211
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About
Contact & Profiles
Research Areas
  • Analog and Mixed-Signal Circuit Design
  • Advancements in Semiconductor Devices and Circuit Design
  • Low-power high-performance VLSI design
  • Energy Harvesting in Wireless Networks
  • Building Energy and Comfort Optimization
  • Innovative Energy Harvesting Technologies
  • CCD and CMOS Imaging Sensors
  • Radio Frequency Integrated Circuit Design
  • Advanced MEMS and NEMS Technologies
  • Advanced DC-DC Converters
  • VLSI and Analog Circuit Testing
  • Advanced Battery Technologies Research
  • Building energy efficiency and sustainability
  • Sensor Technology and Measurement Systems
  • Semiconductor materials and devices
  • Wireless Power Transfer Systems
  • Integrated Circuits and Semiconductor Failure Analysis
  • Analytical Chemistry and Sensors
  • Hygrothermal properties of building materials
  • Engineering Technology and Methodologies
  • Advancements in PLL and VCO Technologies
  • Electrostatic Discharge in Electronics
  • Advanced machining processes and optimization
  • Manufacturing Process and Optimization
  • Silicon Carbide Semiconductor Technologies

Slovak University of Technology in Bratislava
2015-2024

Technical University of Košice
2013-2023

Institute of Electronics
2020

Matej Bel University
2017

Warsaw University of Technology
2015

University of Missouri
2011-2013

Comenius University Bratislava
2012

Czech Academy of Sciences, Institute of Organic Chemistry and Biochemistry
2005

University of South Florida
1983-1994

Czech Academy of Sciences, J. Heyrovský Institute of Physical Chemistry
1993

The paper shortly illustrates the general concept of Reverse Engineering, which includesalso 3D scanning. In main part concrete scanning process chosen individual objects are described. problems that occurred during digitizing parts step by discussed and solved. deals with ball nose end mills screw drill. article gives a procedure for comparing results scanned digital models two

10.4028/www.scientific.net/amm.421.663 article EN Applied Mechanics and Materials 2013-09-11

The paper brings an overview of main challenges and design techniques effectively applicable for ultra-low voltage analog integrated circuits in nanoscale technologies.New linked with a low value the supply process fluctuation nanotechnologies, such as device models, robustness to variation, mismatch others are discussed firstly.Then, approaches towards (ultra) low-voltage systems applications described.Finally, examples basic building blocks ICs designed standard CMOS technology using...

10.13164/re.2018.0171 article EN cc-by Radioengineering 2018-04-12

We present results of theoretical investigation the stability small beryllium clusters, Be2 − 6. Due to fact that clusters are homonuclear, their is sufficiently represented by binding energy De calculated per atom. The knowledge this quantity offers a possibility calculating more complex energetic effects, such as destruction or fusion and adding detaching most stable structures among those singlet multiplicity were studied using highly correlated coupled method with iterative single-...

10.1088/0953-4075/45/8/085102 article EN Journal of Physics B Atomic Molecular and Optical Physics 2012-03-21

Solid-state image sensors which are internally scanned by charge transfer offer a potentially usefull alternative to based on <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x-y</tex> addressing. The application of solid-state scanning introduces sensor design problems common either the "bucket-brigade" or "charge-coupled" approach. Two-dimensional and single-line employing bucket-brigade have been built evaluated. Problems discussed include...

10.1109/t-ed.1971.17322 article EN IEEE Transactions on Electron Devices 1971-11-01

In this paper, a variable gain amplifier designed in 130 nm CMOS technology is presented. The proposed based on the bulk-driven approach, which brings possibility to operate with low supply voltage (i.e. 0.6 V). Since of only V used for operate, there no latchup risk that usually represents main drawback approach. As an input stage, bulk driven transistors are used, makes possible rail-to-rail range. Achieved simulation results indicate VGA can be varied wide range, together feature make...

10.1109/ddecs.2016.7482439 article EN 2016-04-01

In practical applications charge-coupled imagers (CCI's) should be immune to picture degradation due excessive local optical overloads while maintaining large dynamic range. Our analysis shows that a 500 × CCI will have sensitivity approaching the I-SIT (within factor of 10) and an intra scene range approximately 1000:1 for contrast 0.2. However, maintain useful operation under (up 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> ),...

10.1109/iedm.1972.249220 article EN International Electron Devices Meeting 1972-01-01

In this paper, a fully differential difference amplifier designed in 0.35 μm CMOS technology is presented. The proposed reaches high dynamic range and low input noise. Comparison of noise performance the to an ordinary has been performed. Simulation results prove that developed circuit can be advantageously used applications require signal. our work, experimentally employed analog front end readout interface for MEMS (Micro-Electro-Mechanical-Systems) capacitive microphone.

10.1109/ddecs.2015.38 article EN 2015-04-01

To use two separate vircators simultaneously for two-frequency multipulse testing, we designed and constructed a versatile modulator which drives in parallel. We present details of the design, including vircator design with particle-in-cell simulations using CST Particle Studio® MAGIC. The system operates as planned. Microwave output under various operating conditions fits frequency varying inversely anode-cathode gap, although there is considerable scatter at larger gaps, likely due to...

10.1109/tdei.2013.6571421 article EN IEEE Transactions on Dielectrics and Electrical Insulation 2013-08-01

In this paper, a variable gain amplifier (VGA) designed in 130 nm CMOS technology is presented. The proposed based on the bulk-driven (BD) design approach, which brings possibility to operate with low supply voltage. Since voltage of only 0.6 V used for operate, there no risk latch-up event that usually represents main drawback BD circuit systems. transistors are employed input differential stage, makes it possible rail-to-rail range. Achieved simulation results indicate VGA can be varied...

10.1142/s0218126617400035 article EN Journal of Circuits Systems and Computers 2017-02-15

In this paper, a novel bulk-driven cross-coupled charge pump designed in standard 90 nm CMOS technology is presented.The proposed based on dynamic threshold voltage inverter and suitable for integrated ultra-low converters.Due to latchup risk, bulkdriven pumps can safely be used only low-voltage applications.For the input below 200 mV output current of 1 µA, topology achieve about 10 % higher efficiency than conventional gate-driven pump.Therefore, it effectively DC-DC converters, which are...

10.13164/re.2016.0321 article EN cc-by Radioengineering 2016-04-14

The wireless power transfer (WPT) systems, in conjunction with active implantable medical devices (AIMDs), belong to the most discussed topics last years. Recently, low frequency (inductive) or near-field electromagnetic energy make integration of AIMDs easier and simplified that supports their miniaturization. This paper deals possibilities realization secondary coil directly on integrated circuit (IC) chip standard UMC 130 nm CMOS process. We also bring a comparison proposed solution...

10.1109/iceta.2016.7802071 article EN 2016-11-01

The paper deals with design and analysis of a variable-gain amplifier (VGA) working very low supply voltage, which is targeted for low-power applications. proposed was designed using the bulk-driven approach, suitable ultra-low voltage circuits. Since power less than 0.6 V, there no risk latchup that usually main drawback topologies. VGA in 130 nm CMOS technology 0.4 V. achieved results indicate gain can be varied from 0 dB to 18 dB. Therefore, it effectively used many applications such as...

10.1109/mipro.2016.7522109 article EN 2016-05-01

The paper is focused on the design and analysis of a Voltage-to-Frequency Converter (VFC) that was implemented in 130 nm CMOS technology. proposed VFC designed using bulk-driven technique can reliably work with power supply voltage 0.4 V. Since its basic building block Fully Differential Difference Amplifier (FDDA), has differential output. Therefore, high output frequency dynamic range (Δf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.23919/mipro.2019.8756910 article EN 2019-05-01

The paper brings an overview of main challenges in implantable medical devices (IMD) research area, where the objective discussion covers wireless power transferring (WPT) systems as hot topic dedicated to energy harvesting that is still gaining popularity.The focused on electromagnetic-transfer principle, full integration WPT a chip taken primary goal covering passive transducer and rectifier implementations.The presented reveals many issues raised from state art solutions.These solutions...

10.13164/re.2020.0269 article EN cc-by Radioengineering 2020-06-12

4-Coumarinsulfonamide 5c and 4-hydroxy-3-coumarinsulfonamide 7b, were prepared from 4hydroxycoumarin 1. Coumarinsulfonamide was served as intermediate for the synthesis of N-(isopropylphenyl)-N-(coumarin-4-sulfonyl)urea 9 N-(4-bromphenyl-), 8a, N-(1,3,4thiadiazol-2-yl-), 8b, N-(4-isopropylphenyl)-4-aminocoumarin 8c.

10.3998/ark.5550190.0002.610 article EN cc-by ARKIVOC 2001-10-23

This paper addresses a design and performance evaluation of ultra low-voltage non-clocked voltage comparator. The circuit was designed in standard twin-well 130 nm CMOS technology is intended to work temperature range -20 – 85 °C with the power supply 0.6 V. proposed comparator can handle input within rail-to-rail range. Low-voltage approaches, namely, g m /I D methodology combination bulk-driven operation approach have been employed. measurements on fabricated prototype chips included both...

10.1109/ddecs.2018.00016 article EN 2018-04-01

The power saving issue and clean energy harvesting for wireless cost-affordable electronics (e.g., IoT applications, sensor nodes or medical implants), have recently become attractive research topics. With this in mind, the paper addresses one of most important parts conversion system chain – management unit. core such a unit will be formed by an inductorless, low-voltage DC-DC converter based on cross-coupled dynamic-threshold charge pump topology. utilizes power-efficient ON/OFF regulation...

10.3390/s21175721 article EN cc-by Sensors 2021-08-25

A fully differential difference amplifier designed in 0.35 μm standard CMOS technology is presented. The proposed topology reaches high dynamic range, low equivalent input noise and a value of total harmonic distortion. Simulation results prove that the developed circuit can be advantageously used performance applications require signal processing.

10.1109/radioelek.2015.7129039 article EN 2015-04-01

This paper analyzes the phenomenon of sympathetic interaction between transformers which is very likely to occur when a transformer energized on system where are other already connected. significantly changes duration and magnitude transient magnetizing currents in involved may lead maloperation some power protections. article presents formation process inrush current through flux analytical expression bias attenuation two parallel operation transformers. After that, reasons generation...

10.1109/epe.2014.6839519 article EN 2014-05-01
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