A5008389506- Semiconductor Quantum Structures and Devices
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Surface Modification and Superhydrophobicity
- Advanced Semiconductor Detectors and Materials
- Optical Coatings and Gratings
- Nanofabrication and Lithography Techniques
- Gas Sensing Nanomaterials and Sensors
- Photonic Crystals and Applications
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
- Laser Material Processing Techniques
- Diamond and Carbon-based Materials Research
- Graphene research and applications
- Analytical Chemistry and Sensors
- Advanced Sensor and Energy Harvesting Materials
- Nanowire Synthesis and Applications
- Aerogels and thermal insulation
- Nonlinear Optical Materials Studies
- ZnO doping and properties
- Electrochemical sensors and biosensors
- Surface Roughness and Optical Measurements
- Ion-surface interactions and analysis
Qingdao University
2025
Zhejiang Institute of Communications
2025
Zunyi Medical University
2025
First People’s Hospital of Zunyi
2025
Fuzhou University
2024-2025
University of Bedfordshire
2018-2024
Soochow University
2015-2024
ShanghaiTech University
2024
Harbin Institute of Technology
2024
State Council of the People's Republic of China
2019
We present a useful ammonia gas sensor based on chemically reduced graphene oxide (rGO) sheets by self-assembly technique to create conductive networks between parallel Au electrodes. Negative (GO) with large sizes (>10 μm) can be easily electrostatically attracted onto positive electrodes modified cysteamine hydrochloride in aqueous solution. The assembled GO directly into rGO hydrazine or pyrrole vapor and consequently provide the sensing devices self-assembled sheets. Preliminary results,...
This study presents three-dimensional (3D) MoS2/reduced graphene oxide (rGO)/graphene quantum dots (GQDs) hybrids with improved gas sensing performance for NO2 sensors. GQDs were introduced to prevent the agglomeration of nanosheets during mixing rGO and MoS2. The resultant MoS2/rGO/GQDs exhibit a well-defined 3D nanostructure, firm connection among components. prepared MoS2/rGO/GQDs-based sensor exhibits response 23.2% toward 50 ppm at room temperature. Furthermore, when exposed...
In this work, a structure of assembled porous graphene multilayer frameworks was demonstrated to endow the resultant sensing devices with batch uniformity, good response, sensitivity, and selectivity.
This paper mainly studies the distributed resilient model-free adaptive control problem for a class of observer-dependent nonlinear multi-agent systems under FDI attacks and channel fading. Firstly, systems, we adopt hierarchical architecture. In this architecture, observer used is corresponding controller data-driven learning controller. scheme designing separately takes symmetry into account solves system heterogeneity. Secondly, observer, proposed attacks, enabling followers to track...
This study systematically explored the role of NEDD8 in pediatric acute myeloid leukemia (AML) through patient sample analysis, database mining, and vitro experiments. Our results demonstrated that was significantly overexpressed newly diagnosed AML patients associated with poor survival outcomes. Functional enrichment analysis TARGET further revealed a strong correlation between cancer-related pathways. In experiments showed knockdown inhibited proliferation cells (THP-1 MV4-11) induced...
The emergence of immunotherapy as a revolutionary therapeutic modality has fostered confidence and underscored its potent efficacy in tumor therapy. However, enhancing the by precise judicious administration poses significant challenge. In this context, we have developed disulfide-bearing transdermal nanovaccine integrating thiol-reactive agent lipoic acid (LA) into metal-coordinated cyclic dinucleotide nanoassembly, designated LA-Mn-cGAMP (LMC) nanovaccines. Upon topical application to skin...
The morphology, stress, and composition distributions of the crosshatch pattern on a SiGe film grown Si(001) substrate using low-temperature Si buffer are studied by atomic force Raman microscopies. Crosshatching is not related to fluctuation regardless stress undulation associated with strain relaxation in film. morphology arises from vertical lattice induced piled-up misfit dislocations layer substrate. A model for formation proposed.
Si 0.7 Ge 0.3 epilayers with low threading dislocation density have been grown on (001) substrates by introducing a temperature buffer. Such structure can be used as the buffer for growth of device structures. In comparison conventional compositionally graded system, it has advantages having lower density, smaller thickness required degree relaxation, and smoother surface. Experimental evidence suggests that an anomalous relaxation mechanism involved.
Using solid-source molecular-beam epitaxy with a rf-plasma source, we have grown GaInNAs/GaAs single-quantum-well lasers operating at 1.32 μm. For broad-area oxide stripe, uncoated Fabry–Perot laser cavity length of 1600 μm, the threshold current density is 546 A/cm2 room temperature. The internal quantum efficiency for these 80%, while materials losses are 7.0 cm−1. A characteristic temperature 104 K was measured in range from 20 to 80 °C. Optical output up 40 mW per facet under...
Small-size, high-density, and vertical-ordering Ge quantum dots are observed in strained Si/Ge short-period superlattices grown on Si(001) at low growth temperature by molecular-beam epitaxy. The photoluminescence (PL) peak position, the strong PL room temperature, high exciton binding energy suggest an indirect-to-direct conversion of dots. This is good agreement with theoretical prediction. characteristic absorption directly indicates this conversion. tunneling carriers between these also observed.
The nanosheet stacking phenomenon in graphene thin films significantly deteriorates their gas-sensing performance. This issue should be solved and reduced to enhance the gas detection sensitivity. In this study, we report a novel ammonia (NH3) sensor based on holey films. precursors, oxide (HGO) nanosheets, were prepared by etching under UV irradiation with Fenton reagent (Fe2+/Fe3+/H2O2). Holey was reduction of HGO (rHGO) pyrrole. thin-film sensors depositing rHGO suspensions onto...
Nowadays, metal oxide semiconductors (MOS)-reduced graphene (rGO) nanocomposites have attracted significant research attention for gas sensing applications. Herein, a novel composite material is synthesized by combining two p-type semiconductors, i.e., Cu2O and rGO, p-p-type sensor assembled NO2 detection. Briefly, polypyrrole-coated cuprous nanowires (PPy/Cu2O) are prepared via hydrothermal method combined with (GO). Then, the nanocomposite (rGO/PPy/Cu2O) obtained using high-temperature...
We present a 1.3-μm GaInNAs/GaAs quantum-well heterostructure, which consists of strain-mediating GaInNAs layer grown between compressive-strained quantum well and tensile-strained GaNAs layer. Compared to similar sample with no layer, this heterostructure exhibits improved material properties remarkable redshift emission enhanced light intensity. The observations are based on photoluminescence spectra x-ray diffraction data measured for the active region samples.
We have utilized resonant Raman scattering to investigate the phonon modes of self-organized Ge quantum dots grown by molecular-beam epitaxy. Both Ge-Ge and Si-Ge are found exhibit strong enhancements at ${E}_{1}$ exciton. The strain in deduced from energies is consistent with results high-resolution transmission electron microscopy. An upper bound on confinement energy exciton was deduced. enhancement strength indicates interaction between this mode dots.
We report on a recent development of diluted nitride laser diodes operating at the wavelengths around 1.3 μm. The lasers grown by molecular beam epitaxy and processed into 20-μm-wide ridge waveguide structures, mounted episides up subcarriers, exhibit threshold current density as low 563 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , slope efficiency 0.2 W/A per facet, light power to 40-mW continuous-wave, characteristic...
In this article, we report a study of mosaic structures in partially relaxed Si0.7Ge0.3 epilayers grown on Si(001) substrates by x-ray double- and triple-axis diffractometry. The samples have different layer thicknesses hence degrees strain relaxation. Our results show that, at early stages relaxation, the films contain regions laterally separated perfect regions. This is because structure caused misfit dislocation effectively localized lateral range thickness. Therefore, far from...
Relaxed GexSi1−x epilayers with high Ge fractions but low threading dislocation densities have been successfully grown on Si (001) substrate by employing a stepped-up strategy and set of low-temperature GeySi1−y buffers. We show that even if the fraction rises up to 90%, density can be kept lower than 5×106 cm−2 in top layers, while total thickness structure is no more 1.7 μm.