A5010845575- Chalcogenide Semiconductor Thin Films
- Copper-based nanomaterials and applications
- ZnO doping and properties
- Graphene research and applications
- Quantum Dots Synthesis And Properties
- Graphene and Nanomaterials Applications
- Metal and Thin Film Mechanics
- Supercapacitor Materials and Fabrication
- Semiconductor materials and devices
- Gas Sensing Nanomaterials and Sensors
- Transition Metal Oxide Nanomaterials
- Lubricants and Their Additives
- Organic Electronics and Photovoltaics
- Electronic and Structural Properties of Oxides
- Tribology and Lubrication Engineering
- Thermal properties of materials
- Polymer Nanocomposite Synthesis and Irradiation
- Electrical and Thermal Properties of Materials
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Carbon and Quantum Dots Applications
- Catalytic Processes in Materials Science
- Air Traffic Management and Optimization
- Adhesion, Friction, and Surface Interactions
- Chemical and Physical Properties of Materials
Ekiti State University
2023
Obafemi Awolowo University
2012-2023
Adekunle Ajasin University
2023
Argonne National Laboratory
2015-2016
Graphene Oxide (GO) was chemically synthesized from Natural Flake Graphite (NFG). The GO reduced to Reduced (RGO) using hydrazine monohydrate. Thin films of and RGO were also deposited on sodalime glass substrate spray pyrolysis technique (SPT). samples characterized Fourier Transform Infrared (FTIR) spectroscopy, Scanning Electron Microscopy (SEM) with Energy Dispersive X-Ray (EDS) facility attached it, UV-Visible Spectrometry Four-Point probe. FTIR spectra showed the addition oxygen...
Graphene oxide (GO) was chemically synthesized from natural flake graphite (NFG) using the simplified Hummers method. The synthesis carried out two routes. first route involved stirring one pot mixture continuously for three days at ambient temperature while second another six also temperature. GOs were characterized Fourier Transform Infrared Spectroscopy (FTIR), Energy Dispersive X-Ray (EDX), Field Emission Scanning Electron Microscopy (FE-SEM), Raman and UV-Visible Spectrometry. FTIR...
A single solid source precursor bis-(morpholinodithioato-s,s')-Mo was prepared and molybdenum sulphide thin film deposited on sodalime glass using Metal Organic Chemical Vapour Deposition (MOCVD) technique at deposition temperature of 420?C. The characterized Rutherford Backscattering Spectroscopy (RBS), Ultraviolet-Visible Spectroscopy, Four point probe technique, Scanning Electron Mi-croscopy (SEM), X-ray Diffractometry (XRD) Atomic Force Microscopy (AFM). direct optical band gap 1.77 eV...
Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research tribological properties is still unfolding. In this work, nitrogen-doped were deposited 304 L stainless steel substrate from a combination of zinc acetate ammonium precursor by MOCVD technique. Compositional structural studies the done using Rutherford Backscattering Spectroscopy (RBS) X-ray Diffraction (XRD). The frictional behavior film coatings was evaluated...
Single solid source precursor of Copper–Aluminium dithiocarbamate was prepared and characterized by infrared spectroscopy. Thin films copper aluminium sulphide were deposited on the substrate (soda lime glass) using metal organic chemical vapour deposition (MOCVD) technique within temperature ranges 420 450 °C through pyrolysis precursor. Morphological optical characterizations then carried out. study out scanning electron microscopy (SEM) showed that are dense polycrystalline in nature,...
Bis-(morpholinodithiato-s,s')-Cu-Cd was synthesized from appropriate reagents as a single solid source precursor and characterized using particle induced x-ray emission (PIXE), Fourier transform infrared (FTIR) spectroscopy differential thermal analysis (DTA). Cu-Cd-S thin films were deposited on sodalime glass substrate MOCVD technique at temperatures in the range 360 °C–450 °C. The further Rutherford backscattering (RBS), diffraction (XRD), scanning electron microscopy (SEM), UV-visible...
Herein, we report the comparative gas sensing performance (at room temperature) of reduced graphene oxide sensors obtained by reducing using extracts pumpkin leaf, neem leaf and methionine. An interdigitated pattern was designed on soda-lime glass a stamp method dispersed solution rGO spin coated pattern. The electrical response investigated (using simple in-house measurement set up) measuring change in resistance with varying concentration exposure to liquefied petroleum (LPG). From...
N-doped ZnO thin films were deposited on 304L stainless steel through the pyrolysis of zinc acetate and ammonium in different ratios at a temperature 420 °C using metal organic chemical vapor deposition. Compositional structural analyzes performed by Rutherford backscattering spectroscopy X-ray diffraction. The frictional behavior substrate was evaluated ball-on-flat configuration with reciprocating sliding under marginally lubricated fully flooded conditions. Al alloy (2017) used as ball...
Abstract In this work, the effect of hydrothermal and chemical treatment on optical electrical properties reduced graphene oxide (RGO) was investigated. Reduced synthesized by both route using a locally fabricated Teflon lined autoclave method hydrazine monohydrate. The thin film obtained depositing RGO Indium Tin Oxide (ITO) glass via spray pyrolysis technique. hydrothermal, Raman spectroscopy analysis showed greater restoration conjugated networks in sheet. transmittance decreased after...
Thin films of copper titanium oxide were deposited by metal organic chemical vapour deposition technique from the synthesized single solid source precursor, acetylacatonate Cu [Ti(C5H7O2)3] at temperature 420°C. The characterized using Rutherford Backscattering Spectroscopy, Scanning Electron Microscopy with Energy Dispersive X-Ray facility attached to it, Diffractometry, UV-Visible Spectrometry and van-der Pauw Conductivity measurement. Results show that thickness prepared film is...
Abstract Lithium manganese oxide thin films were deposited on sodalime glass substrates by metal organic chemical vapour deposition (MOCVD) technique. The prepared pyrolysis of lithium acetylacetonate precursor at a temperature 420 °C with flow rate 2.5 dm 3 /min for two-hour period. Rutherford backscattering spectroscopy (RBS), UV-Vis spectrophotometry, X-ray diffraction (XRD) spectroscopy, atomic force microscopy (AFM) and van der Pauw four point probe method used characterizations the...
Thin Films of Lithium Chromium Oxide were deposited on soda lime glass substrates at a temperature 420 °C by the pyrolysis mixture Hydroxide and Acetylacetonate (1:2), using Metal Organic Chemical Vapour Deposition technique. The prepared thin films characterized Rutherford Backscattering (RBS), X-Ray Diffraction (XRD) Ultraviolet-Visible Spectrophotometry. Using RBS ratio Li:Cr:O in was found to be 36:18:46, leading stoichiometry Li2CrO2+? (? = 0.5). A direct allowed bandgap 3.58 eV...
Molybdenum sulphide thin films were deposited on sodalime glass, silicon wafer and stainless steel (AISI 304L) substrates using Metal Organic Chemical Vapour Deposition (MOCVD) technique at temperatures ranging from 360 o C to 450 C. The characterized Rutherford Backscattering Spectroscopy (RBS), Ultraviolet-Visible Spectroscopy, Four point probe technique, Scanning Electron Microscopy (SEM) Atomic Force (AFM). Elemental analysis showed that the S/Mo ratio increases 1.22 2.33 with increasing...
Abstract In this work, copper zinc sulfide (CZS) ternary thin films were prepared from the pyrolysis of a Bis-(morpholinodithiato-s,s’)-Cu-Zn precursor using metal-organic chemical vapor deposition technique maintained at 450 °C in ambient nitrogen as carrier gas. The flow rate was varied to study its effect on optoelectronic properties CZS films. particle-induced x-ray emission (PIXE) single solid source shows presence copper, zinc, and sulfur. Fourier transform infrared spectrophotometer...