A5058542422- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Ga2O3 and related materials
- Copper-based nanomaterials and applications
- Advanced Semiconductor Detectors and Materials
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- GaN-based semiconductor devices and materials
- Quantum Dots Synthesis And Properties
- Transition Metal Oxide Nanomaterials
- Microfluidic and Capillary Electrophoresis Applications
- Anodic Oxide Films and Nanostructures
- Mass Spectrometry Techniques and Applications
- Analytical Chemistry and Sensors
- Conducting polymers and applications
- Chalcogenide Semiconductor Thin Films
- Graphene research and applications
- Electronic and Structural Properties of Oxides
- Molecular Junctions and Nanostructures
- Electrohydrodynamics and Fluid Dynamics
- Advancements in Battery Materials
- Luminescence Properties of Advanced Materials
Czech Academy of Sciences, Institute of Photonics and Electronics
2016-2025
Brookhaven National Laboratory
2016
Czech Academy of Sciences
2004-2015
Czech Academy of Sciences, Institute of Analytical Chemistry
2006-2015
University of Chemistry and Technology, Prague
2015
Universidad Complutense de Madrid
2005
This article presents a convenient method for fabricating hybrid heterojunctions using poly (N-vinylcarbazole) (PVK) and 1-D zinc oxide nanorod (ZnO NR) array photodetector (PD) development. In this context, PVK ZnO NRs were employed as electron donor acceptor, respectively. First, hydrothermally synthesized through two-step procedure at low temperatures on an n-type silicon substrate. Ohmic contacts integrated by incorporating graphite eutectic In-Ga (eGaIn) in to the film Si substrate, The...
Self-assembled GaN nanowires are typically grown on Si substrates with convenient nucleation layers. Light-emitting devices based arrays of require that the layer is electrically conductive and optically nontransparent to prevent absorption generated light in substrate. This study reports molecular beam epitaxial growth ZrN layers sputtered sapphire demonstrates provides ohmic contact dense vertical n-type nanowires. The nature ZrN/n-type nanowire evidenced by measurement current-voltage...
Sintering of ZnO pressed powder under Ar flow at temperatures between 1250 and 1300 °C leads to the formation elongated microstructures nanostructures, with different morphologies, on sample surface. Rods needles cross-sectional dimensions ranging from tens nanometres several microns up hundreds in length are obtained. In an advanced stage growth, nanoneedles frequently arranged bundles, forming walls tubes dimensions. addition, microcombs microfeathers consisting well oriented observed....
Highly rectifying semimetal graphite/ZnO Schottky diodes with a low-ideality-factor (1.08 at 300 K) were investigated by temperature-dependent current-voltage measurements. The current transport was dominated thermionic emission between and 420 K the extracted barrier height followed Schottky-Mott relation. A Richardson constant (A** = 0.272 cm−2K−2) from plot shows nearly linear characteristics in temperature range 300–420 K.
The first Schottky diodes based on n-CdMnTe crystals with pronounced rectifying properties are investigated. It is shown that the I–V characteristics of fabricated by printing colloidal graphite can be described Sah–Noyce–Shockley theory generation–recombination in space charge region. Exponential increase forward current voltage limited a relatively low barrier height at graphite/CdMnTe contact (~ 0.4 eV) and significant series resistance crystal bulk 106 Ω room temperature). Tunneling due...
We report a construction of self-aligning subatmospheric hybrid liquid junction electrospray interface for CE eliminating the need manual adjustment by guiding capillaries in microfabricated glass chip at defined angle. Both ESI and separation are inserted into part until their ends touch. The distance between capillary openings is angle capillaries. contains channels placement connection external electrode reservoirs. It was fabricated using standard photolithographic/wet chemical etching...
In this work, we investigate ethanol (EtOH)-sensing mechanisms of a ZnO nanorod (NRs)-based chemiresistor using near-ambient-pressure X-ray photoelectron spectroscopy (NAP-XPS). First, the NRs-based sensor was constructed, showing good performance on interaction with 100 ppm EtOH in ambient air at 327 °C. Then, same NRs film investigated by NAP-XPS presence 1 mbar oxygen, simulating atmosphere and O2/EtOH mixture temperature. The partial pressure 0.1 mbar, which corresponded to analytes air....
Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic deposition Pt nanoparticles are investigated at different temperatures the measurement current–voltage and capacitance–voltage characteristics. The forward I–V characteristics junction described thermionic emissions theory low bias (3kT/q < V 0.2 V) tunnelling current transport through narrowed space charge region > V. reverse analysed in scope emission model presence shunt resistance. these diodes...
Electrophoretic deposition of palladium nanoparticles prepared by the reverse micelle technique onto InP substrates is addressed. We demonstrate that substrate pre-deposition treatment and conditions can extensively influence morphology deposited nanoparticle films. Schottky diodes based on these films show notably high values barrier height rectification ratio giving evidence a small degree Fermi level pinning. Moreover, electrical characteristics are exceptionally sensitive to exposure gas...
The electrical properties of highly rectifying semimetal-graphite Schottky contacts fabricated by printing colloid graphite on n-type InP and GaN are investigated as a function annealing temperature current–voltage capacitance–voltage techniques. As-deposited diodes exhibit excellent characteristics 7.5 × 107 1.9 1011 with barrier height 1.13 1.29 eV at room for GaN, respectively. key aspect this technique, compared conventional vacuum evaporation, is low deposition energy process, leaving...
We report on the formation of Pt nanoparticle monolayers by electrophoretic deposition from nonpolar solvents. First, growth kinetics nanoparticles prepared reverse micelle technique are described in detail. Second, a model charging media is discussed and methods to control proposed. Finally, essential parameters process mechanisms their analyzed.