This paper analysed the effects of bending on performance a textile antenna wherein under test was made felt substrate for both industrial, scientific, and medical (ISM) band WBAN applications at 2.45 GHz. Moreover, conductive material used patch, ground plane 0.17 mm Shieldit textile. Meanwhile, structure in form rectangular, with line patch between elements to abate mutual coupling effect. The measured operating frequency range spanned from 2.33 GHz 2.5 gain 4.7 dBi In this paper,...

This study focuses on the characterization of two 0.5 μm gate-length double heterojunction AlGaAs/InGaAs/GaAs pHEMTs using pre and post fabricated vertical oriented multilayer 3D monolithic microwave integrated (MMIC) circuit technology. The effects presence components above active layer were accomplished by means capacitance–voltage measurement, on-wafer DC S-parameter measurements two-tone intermodulation distortion measurement. barrier height, donor concentration in layer, existing...

0.25 μm gate AlGaN/GaN/SiC HEMT's nonlinearity modelling and characterization over a wide temperature frequency have been studied for the first time. The of these devices has carried out using two-tone intermodulation distortion. An empirical analytical model developed good agreement was established between simulated measured data. This result is valuable future design optimizations advanced GaN based MMIC's operating at high temperature.

We report for the first time, design and realization of a MMIC power limiter based on (0.5 × 200) µm2 pHEMT Schottky diodes using an in-house 3D GaAs multilayer CPW technology. The system three layers conductor metals two sandwich polyimide as dielectric was employed. consists 50Ω V-shaped coplanar waveguide transmission line connected to pair shunt diodes. Measured on-wafer S-parameter data demonstrates maximum small signal insertion loss less than 2 dB from 50 MHz 3 GHz return better 7.5 dB.

A microwave receiver protection limiter circuit has been designed, fabricated and tested using vertically stacked GaAs MMIC technology. The with a dimension of 2.5 × 1.3 mm2 is formed by double-channel AlGaAs/InGaAs pseudomorphic HEMT (pHEMT) Schottky diodes integrated low-loss V-shaped coplanar waveguide multilayer structure. electrical parameter characteristics the pHEMT are presented including C–V profile showing presence double channel in device layer This unique feature can also be seen...

Linear and nonlinear characteristics of 0.25 µm AlGaN/GaN HEMT grown on SiC substrate have been studied as a function biasing, input power, frequency temperature using two-tone intermodulation distortion measurement technique for the first time. The results indicate significant modification output IMD power. An empirical analytical model has developed good agreement was shown between measured data with simulation results. analysis GaN presented can be utilized performance enhancement design...

In this paper, the development and implementation of vertical-oriented monolithic microwave ICs (MMICs) in Schottky diode structure are discussed. The is configured by shorting drain source contacts a prefabricated pseudomorphic HEMT (pHEMT) vertical arrangement to minimise utilisation chip area. Smaller forward voltage drop observed from which designed for rectification. Measured S-parameters show good agreement with simulated analysis. To investigate feasibility approach, used designing...

In this paper, we demonstrate for the first time implementation of three-dimensional multilayer technology on GaAs-based pseudomorphic high electron mobility transistor (pHEMT) switches. Two types pHEMT switches are considered, namely single-pole single-throw (SPST) and double-throw (SPDT). The design analysis devices demonstrated through a simulation industry-recognised standard model, TriQuint's Own Model—Level 3, developed by TriQuint Semiconductor, Inc. From analysis, three optimised...

In this paper, we report anomaly and intrinsic capacitance behaviour over temperature of AlGaN/GaN/SiC AlGaAs/GaAs high electron mobility transistors using on wafer measurement up to 50 GHz. Differences are observed; most notably that the trend capacitances with two device technologies completely different. This continues for other parameter such as threshold voltage, two-dimension electro gas sheet carrier densities well. These results valuable future design optimizations advanced GaN GaAs...

Radio Frequency (RF) energy harvesting is a process where RF from the ambient source collected and converted into an electrical by using rectifier circuit. However, only supplies very low input power. Therefore, it important to design circuit that not rectified signal, but also with amplified characteristic obtain higher output voltage Driven increasing use of Internet Things (IoT) devices operating in 2.4 GHz Industrial, Scientific, Medical (ISM) band, presented this paper designed same...

Technological advancements have fueled a growing demand for reliable mobile communication systems, highlighting the importance of wearable applications across various sectors, including biomedicine, military, and rescue services. This study underscores crucial role antennas in addressing this increasing demand, with specific focus on their design development Internet Things (IoT) applications. The objective is to establish resilient links capable operating effectively diverse environments...

Wearable antennas have significantly expanded the capabilities of electronic devices, as they can now be seamlessly integrated into clothing for user convenience. The advent 5G has opened up possibilities enhanced functionality, necessitating compact with high gain efficient data transmission. In this paper, a sub-6GHz stacked wearable antenna is proposed. choice rectangular patch structure was made its simplicity and ease fabrication. A comprehensive analysis design, progressing from single...

We report on the device considerations and discuss design fabrication of 0.5 μm gate length double-channel GaAs pHEMT well-suited for diode based limiter applications. I-V, C-V RF characterisations Schottky that is used in applications have been presented. The presence double channel discussed clearly observed from doping curve 1/C2 versus V plot. Double layers provide wide-ranging usages linear application. Based measured DC parameter extractions, an equivalent circuit model derived. All...

Terahertz technology has recently attracted the attention of researchers due to its wide range applications such as security and military, biomedicine health care, astronomy biology. There are many scrutinized research papers among terahertz with nanodevices self-switching devices. They need monolithic microwave integrated circuits for integration. It is evident that system impedance transmission lines 50 Ω. However, main limitation diodes high level in megaohms which a huge value not so...

This paper describes the development of stand solar panel based on angle and direction. A direction here means photovoltaic is facing sun. 5 different angles had been investigated. The method used in this was an output 50W photovoltaic. as a reference to identify performance PV. 3 places chosen at north Peninsular Malaysia. results show approximate 90° best design for need be inclined by considering other factors. Tilt 87 North Malaysia, which position development. analysis voltage from...

Fish Sensor Network (FSN) is potential to help poor and well-established fisherman increase their catch. However, sensor installation may face problem. Some identified challenges are discussed in this paper, including wave wind, corrosive weather, radio signal propagation, moving traffics, theft. Careful decision should consider both electrical physical so that sustainable.

This study aims to investigate the association between bipolar dimension emotional model (based on band-localize fractal (BLFD) feature) and Stroop colour-word test (STW). Twelve healthy participants are voluntarily took part in this study. Participants’ emotion during STW was measured using a wireless electroencephalogram (EEG) sensor. Three sessions were introduced based different stress level induced. Alpha beta frequency band extracted from EEG signals six-level wavelet decomposition....

Stress is a significant issue in everyday life that affects both physical and mental health.There are different approaches to stress classification.This research examines the implementation of fractal dimension (FD) method as one features for state classification using brain signals.Consequently, comparison between FD wavelet transform has been conducted electroencephalogram (EEG) signals recorded during Stroop Colour Word Test (SCWT).The results show better state.The highest F1 score...