Yulong Cai

ORCID: 0000-0003-0237-5431
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • CCD and CMOS Imaging Sensors
  • Radiation Detection and Scintillator Technologies
  • Integrated Circuits and Semiconductor Failure Analysis
  • Particle Detector Development and Performance
  • Advanced Optical Sensing Technologies
  • Radiation Effects in Electronics
  • Advanced Memory and Neural Computing
  • Underwater Vehicles and Communication Systems
  • Advanced Neural Network Applications
  • Infrared Target Detection Methodologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Graphite, nuclear technology, radiation studies
  • Real-time simulation and control systems
  • Remote-Sensing Image Classification
  • Advanced biosensing and bioanalysis techniques
  • Control and Dynamics of Mobile Robots
  • Cell Image Analysis Techniques
  • Semiconductor materials and devices
  • Analytical Chemistry and Sensors
  • Water Quality Monitoring Technologies
  • Advanced Image and Video Retrieval Techniques
  • Advanced Vision and Imaging
  • Adaptive Control of Nonlinear Systems
  • Underwater Acoustics Research
  • DNA and Biological Computing

Innovation Academy for Microsatellites of Chinese Academy of Sciences
2023-2024

Shanghai Micro Satellite Engineering Center
2023-2024

Henan University
2021-2022

Xinjiang Technical Institute of Physics & Chemistry
2018-2021

Chinese Academy of Sciences
2018-2021

University of Chinese Academy of Sciences
2018-2021

Institute of Oceanographic Instrumentation
2021

Shandong Academy of Sciences
2021

Qilu University of Technology
2021

Xihua University
2021

The radiation environment in the inner belt (IRB) is severe due to large flux of high-energy protons. Very few satellites are deployed IRB today, and shielding this region did not get much attention. An imaging satellite developed by Chinese Academy Sciences will operate 2023. In order shield protons, a new composite material was developed, ability compared with that Al, Ta, sandwich materials Geant4 simulation tool. results show can reduce total ionizing dose 40% displacement damage 50% Al...

10.1109/tns.2023.3255205 article EN IEEE Transactions on Nuclear Science 2023-03-13

The dark current random telegraph signal (DC-RTS) has been investigated in a four-transistor pinned photodiode 0.18-μm backside illuminated CMOS image sensor (BSI CIS). sensors were irradiated by high energy protons of 50, 60 and 70 MeV, respectively. After exposure to protons, the radiation-induced variations number RTS pixels, levels transition maximum amplitude are analyzed. effect proton on occurrence probability is studied using two types theoretical models. Furthermore, DC-RTS...

10.1016/j.rinp.2020.103443 article EN cc-by-nc-nd Results in Physics 2020-09-29

Single-event transient (SET) and single-event latchup (SEL) of a 4T pinned photodiode (PPD) complementary metal&#x2013;oxide&#x2013;semiconductor (CMOS) image sensor (CIS) fabricated with 0.18-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> CMOS process were investigated using heavy ions picosecond pulsed laser. The SET bright spot characteristics further studied, the spots formed by laser analyzed. exhibited SELs micro-SEL. To determine precise...

10.1109/tns.2020.3000275 article EN IEEE Transactions on Nuclear Science 2020-06-05

A pinned photodiode complementary metal-oxide-semiconductor transistor (CMOS) active pixel sensor is exposed to Co-60 evaluate the performance for space applications. The sample irradiated with a dose rate of 50 rad (SiO2)/s and total 100 bad (SiO2), kept unbiased. degradation dark current, full well capacity, quantum efficiency induced by ionizing damage effect are investigated. It found that current increases mainly from shallow trench isolation (STI) surrounding photodiode. Further...

10.1088/1674-1056/27/10/104207 article EN Chinese Physics B 2018-10-01

Static random-access memory (SRAM), a pivotal component in integrated circuits, finds extensive applications and remains focal point the global research on single-event effects (SEEs). Prolonged exposure to irradiation, particularly displacement damage effect (DD) induced by high-energy protons, poses substantial threat performance of electronic devices. Additionally, impact proton six-transistor SRAM with an asymmetric structure is not well understood. In this paper, we conducted analysis...

10.3390/electronics12245028 article EN Electronics 2023-12-16

This paper describes the design of a deep-sea chemical data collector for seafloor observatory network. The control system comprises main unit, energy supply distribution serial port expansion condition monitoring, power switching and communication unit. functions include self-inspection, diagnosis, isolation. It also transmits collected monitoring in cabin to shore station management real-time. is transmitted through secondary junction box photoelectric composite cable. includes optical...

10.1080/1064119x.2021.1994064 article EN Marine Georesources and Geotechnology 2021-10-23

Complementary metal oxide semiconductor (CMOS) image sensor is susceptible to proton single event effect when being applied space environment. Proton irradiation experiments with different energy values are carried out on a commercial FSI and BSI CMOS sensors. The analyzed by on-line testing, the maximum 200 MeV, total fluence 10&lt;sup&gt;10 &lt;/sup&gt;particle/cm&lt;sup&gt;2&lt;/sup&gt;. single-event transient bright spots of shapes observed in pixel array. By extracting deposition size,...

10.7498/aps.71.20211838 article EN Acta Physica Sinica 2022-01-01

CMOS image sensors were irradiated by protons of 50 and 70 MeV the dark current random telegraph signal (RTS) is investigated. After exposure to protons, experimental results provide new evidence that confirms existence a correlation between radiation-induced hot pixels RTS pixels. Moreover, evolutions percentage showing behavior at distinct conditions are presented, suggesting different dependence two kinds on operation conditions. The isochronal annealing experiment demonstrate defects...

10.1080/00223131.2020.1847704 article EN Journal of Nuclear Science and Technology 2020-11-24

As mainstream optical imaging electronic devices, image sensors are widely used in space missions under complex radiation environments. This study investigated the effects 60 and 10 MeV proton irradiations on dark current, signal non-uniformity (DSNU), photon response (PRNU) for a commercial global shutter 8T complementary metal–oxide semiconductor (CMOS) sensor. A fluence range from 9 × 109 p/cm2 to 7.26 1010 was considered. The total ionizing dose deposited reached krad (Si), which...

10.1080/10420150.2021.1898391 article EN Radiation effects and defects in solids 2021-03-12

Charge coupled devices with high sensitivity and low dark current were irradiated separately by 10 MeV proton, 14 1 neutron up to the fluences of 109 cm−2. The generation pattern hot pixels at different conditions is presented. experimental results demonstrate that nuclear inelastic scattering dominant mechanism induced proton irradiations. Meanwhile, a theoretical model used predict pixel tails annealing time points operating temperatures.

10.1080/10420150.2019.1701470 article EN Radiation effects and defects in solids 2020-01-13

BackSide-Illuminated (BSI) CMOS Image Sensors (CISs), with developed performance on quantum efficiency and sensitivity, have been applied for aerospace missions gradually replaced FrontSide-Illuminated (FSI) CISs. Two types of BSI CISs different epitaxial layer thicknesses were irradiated by 14-MeV neutron up to 3.40 × 1011 n/cm2 analyze the degradation induced irradiation. Dark current, dark current distribution, full well capacity, spectral response tested before after irradiation at...

10.1080/00223131.2020.1751323 article EN Journal of Nuclear Science and Technology 2020-04-19

In this paper a general positioning subsystem that used for several kinds of mobile robot is presented.The consist Optical Fiber Gyroscope(OFG) with high precision and Orthogonal Passive Wheel System(OPWS) which combination Swedish Wheels Encoders.The OPWS an independent planar odometer regarded as the local reference kinematic model, while OFG provides instant angle between global frame robot.A dead recking model developed regardless specific base structure.The error sources proposed method...

10.2991/icecee-15.2015.291 article EN cc-by-nc Advances in computer science research 2015-01-01

According to the environment and work styles, underwater monitoring devices can be divided into three type, fixed device, floating device mobile device. Floating platform is a new type of which mainly used for video pool. as in water motion hydrostatic characteristics are closely related, influent counterweight, weight distance body diameter structure parameters on its natural periods roll, pitch heave should considered, In this work, most, counterweight followed, have different influence ,...

10.1051/matecconf/20153104002 article EN cc-by MATEC Web of Conferences 2015-01-01

Segmentation of rat heart section images and infarct area quantization are essential components size measurement in processing data from animal experiments on ischemic disease. Previously, the task measuring sections was performed manually by experienced researchers, which very costly time-consuming. In this paper, we propose a two-stage semi-supervised approach to solve calculation images. The uses semantic segmentation model semi-automated algorithm separate differently stained regions...

10.1109/iccc56324.2022.10065753 article EN 2022-12-09

Recently, object detection in remote sensing images has been an important topic computer vision. As a mainstream approach to detectors, single-stage detectors usually compute the points of bounding box get location target, and optimize them by Focal Loss. One development trends for one-stage is combine with Localization Quality Estimation (LQE), which can provide accurate ranking scores, thus bring benefits Non-Maximum Suppression as well following results. In this paper, we propose...

10.1109/iccc54389.2021.9674308 article EN 2021 7th International Conference on Computer and Communications (ICCC) 2021-12-10
Coming Soon ...