The benefits of utilizing transparent conductive oxide on top a thin p-GaN layer for continuous-wave (CW) operation blue laser diodes (LDs) were investigated. A very low operating voltage 5.35 V at 10 kA/cm2 was obtained LDs with 250 nm thick compared to 7.3 conventional 650 p-GaN. An improved thermal performance also observed the samples resulting in 40% increase peak light output power and 32% decrease surface temperature. Finally, tradeoff demonstrated between increased optical modal loss...

A novel approach to realize DFB gratings on GaN based laser diodes is presented and continuous-wave single longitudinal mode operation achieved. The first order were fabricated the surface of indium tin oxide (ITO) top ridge, which combines benefits simplified fabrication, easy scalability wider ridges, no regrowth or overgrowth. Under operation, emits with a full FWHM 5 pm, SMSR 29 dB output power from facet as high 80 mW. To best authors' knowledge, this also demonstration DFB-LD semipolar...

Thin epitaxial layers of NiInGaAs formed by solid state reaction Ni on (100) In0.53Ga0.47As are used as metal source and drain regions for oxide field effect transistors. Here, the authors present a structural chemical analysis this phase. The stoichiometry layer was determined Ni2In0.53Ga0.47As. Transmission electron microscopy revealed an abrupt interface detailed x-ray diffraction showed that is hexagonal lattice, which grows epitaxially with orientation relations...

We report observations of lateral mode confinement by a tapering nanoporous-GaN layer in the n-side cladding blue-emitting InGaN laser diode grown on semipolar (202¯1¯) plane bulk GaN. Little additional occurred transverse direction, and nanoporous did not serve as current aperture. Nanoporous-GaN, with Si-doping 8x1018 cm-3 20% porosity had resistivity 3 Ω-cm thermal conductivity 4 W/m-K, general agreement data reported c-plane VCSEL structures. An excess modal loss 19 cm-1 was found.

The temperature dependence of the current-voltage characteristics Ni-InGaAs alloy Schottky contacts to n-In0.53Ga0.47As was measured. Nearly ideal plots with an ideality factor close unity were obtained. Arrhenius curve across wide range 80–300 K perfectly linear, yielding a barrier height 0.239 ± 0.01 eV. This value is substantially larger than previously reported. Conventional metal based diodes did not exhibit behavior. diode are attributed lack oxidation and contamination interface...

We obtained InGaN laser diodes (LDs) with a low optical loss (1.9 ± 0.6 cm−1) by utilizing an undoped In0.07Ga0.93N p-waveguide (p-WG) and remote p-AlGaN electron blocking layer. This improvement, however, was accompanied injection efficiency (37%) poor material gain. Electroluminescence measurements energy band diagram simulations revealed excessive carrier accumulation in the p-WG region, which suppressed introducing indium-free GaN p-WG. enabled LDs high gain, (4.6 0.7 cm−1), improved...

We apply the gated Hall method to obtain density of trap distribution, D <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">it</sub> (E), at insulator/III-N interface a heterostructure field effect transistor. It is shown that proportional difference between steady-state and high-frequency prediction gate-induced two-dimensional electron gas concentrations. The Dit profile SiN xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /GaN in energy range...

Commercially available hydride vapor phase epitaxy gallium nitride (GaN) is characterized with the aim to correlate oxygen and hydrogen secondary ion mass spectrometry profiles of a GaN wafer electrical properties sample. A layer model, including doping profile mobility, derived, utilizing (capacitance–voltage, Hall), structural (high resolution X-ray diffraction) optical (polarized infrared spectroscopy) methods. Oxygen are easily incorporated during growth GaN. an n-type dopant in GaN,...

Transient phenomena in AlGaN/GaN heterostructure field-effect transistors are attributed to trapping and detrapping of electrons from deep localized states, the measured activation energies conventionally associated with electron capture emission processes. This standard interpretation ignores, however, transport between two-dimensional gas trap. Using gated van der Pauw structures, we demonstrate that transient behavior is determined by (at least for process). The energy is, therefore, a...

As a consequence of the growth process, undoped commercially available GaN epi layers possess unintentionally incorporated dopants. Electrical and optical methods reveal doping level mobility profile which correlates to oxygen impurity distribution lattice strain

We compare the simulations and measurements of gate leakage current in metal-insulator-semiconductor capacitors fabricated on standard AlGaN/GaN transistor layers. In simulations, a fixed charge density at interface between Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> layer GaN cap was assumed for simplicity. The (which depends bias device history) obtained from...

Several hurdles to further enhance the performance of semipolar III-Nitride laser diodes are addressed in this work. Particularly, we focused on improving their high operating voltage by thinning p-GaN cladding layer and utilizing a transparent conductive oxide p-contact. On-wafer optical absorption measurements showed that reduction with thinner was limited increased loss due mode overlap ITO/metal anode. In separate attempts minimize bulk-related losses, implemented new design consisted an...

A tradeoff behavior between low Schottky gate leakage current and improved dynamic stability of AlGaN/GaN heterostructure FETs was previously reported, attributed to variations in the metal/semiconductor interface properties. Here, we show that a is found transistors gated van der Pauw test structures were fabricated on same wafer, underwent identical surface treatments. In measurements, slow transient response large variation 2-D electron gas concentration compared with equilibrium...

We present a methodology, based on gated van der Pauw measurements, to identify the electron trap charging or discharging energy at different spatial locations in AlGaN/GaN heterostructures. The slow transient response of 2-D gas concentration was recorded following Schottky gate and substrate voltage pulses temperatures. While recovering from stress, both trapping detrapping processes are observed times temperatures, demonstrating that dynamic rather than quasi-equilibrium considerations...

Following the silicide to silicon contact approach, Ni-InGaAs alloy was studied as an ohmic p-type InGaAs. The Schottky barrier height of this system is similar that conventional metals such Ti, but interface oxide free. obtained specific resistivity material substantially lower than standard Pt based metallic contacts. However, if employed for fabrication base HBTs, nickel thickness variations may degrade performance collector junction.

A novel approach to realize DFB gratings on GaN based laser diodes is presented and single longitudinal mode operation achieved. For lasers with plasma-etched surface gratings, was maintained until 900 mA the spectral width FWHM less than 5 pm a SMSR of more 29 dB. Moreover, several issues limiting performance semipolar III-Nitride etched grating are also addressed in this work. Besides these first order that were formed by electron beam lithography shallow plasma etching, an improved design...

Gated van der Pauw structures can be used to distinguish between different trapping effects in AlGaN/GaN HEMT layers, and evaluate trap density. Activation energies also obtained [2]. The absence of transistor access region greatly simplifies the interpretation data compared pulsed I-V experiments.

In the above paper, equation 5 should read <list list-type="ordered" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><list-item><label>(1)</label> <inline-formula> <tex-math notation="LaTeX">$dV_{B} ={d\left ({ {q\Delta n} }\right )} / {C_{B} }$ </tex-math></inline-formula> Equation 6 </list-item><list-item><label>(2)</label> notation="LaTeX">$D_{it} \left {E_{f} +{q\Delta n}/ }} )\approx \frac C_{I} }{q^{2}}\left [{ {\left {\frac {d\left )}{dV_{G}...

Laser diodes (LDs) based on the group III-nitride material system are forecasted to be key components of next generation high-intensity white lighting systems [1]. For such systems, LDs offer more power per chip area, much higher spatial brightness, and no efficiency droop above threshold compared light emitting (LEDs). To meet these expectations, high-power high-efficiency continuous-wave (CW) operation a LD is essential. However, date, InGaN performance still hampered by high operating...

We discuss the use of GaN high-power laser diode in general lighting applications. After reviewing achievements; phosphors materials, optical design and possible performances these devices are discussed.