Xiaobin Guo

ORCID: 0000-0003-0262-4063
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About
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Research Areas
  • Ferroelectric and Piezoelectric Materials
  • Multiferroics and related materials
  • Magnetic properties of thin films
  • Magnetic Properties and Applications
  • Advanced Memory and Neural Computing
  • Dielectric materials and actuators
  • Magnetic and transport properties of perovskites and related materials
  • Ferroelectric and Negative Capacitance Devices
  • Microwave Dielectric Ceramics Synthesis
  • Metallic Glasses and Amorphous Alloys
  • Magnetic Properties of Alloys
  • Neuroscience and Neural Engineering
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Electronic and Structural Properties of Oxides
  • Dielectric properties of ceramics
  • Transition Metal Oxide Nanomaterials
  • Advanced Image and Video Retrieval Techniques
  • Advanced Condensed Matter Physics
  • Magnetic Properties and Synthesis of Ferrites
  • Acoustic Wave Resonator Technologies
  • Remote-Sensing Image Classification
  • Ga2O3 and related materials
  • Carbon Nanotubes in Composites
  • Magneto-Optical Properties and Applications

Guangdong University of Technology
2019-2025

Aerospace Information Research Institute
2023

Chinese Academy of Sciences
2023

Centre for Higher Education
2020

Lanzhou University
2013-2020

Zhengzhou Railway Vocational & Technical College
2018

Xi'an University of Science and Technology
2014

McGill University
1991-1993

BaTiO3(BT) has attracted extensive attention among advanced lead-free ferroelectric materials due to its unique dielectric and properties. However, the enormous remanent polarization coercive field severely impede improvement of energy storage capabilities. Here, BaTiO3Bi(Zn0.5Hf0.5)O3 (BT-BZH) ceramics with high breakdown strength remarkable relaxation characteristics can be obtained by introducing composite component BZH in BT regulate phase structure grain size ceramics. The findings...

10.1016/j.jmat.2023.02.014 article EN cc-by-nc-nd Journal of Materiomics 2023-03-25

The magnetic properties of the low-temperature phase MnBi, prepared by rapid solidification, have been measured in a pulsed field over temperature range 80--625 K. anisotropy field, obtained singular-point-detection technique, is found to increase with and has maximum value 9 T at 530 A fit saturation-magnetization measurement gives virtual Curie point 775 coercive fitted hybrid domain-wall-pinning theory which yields, 300 K, domain-wall energy 15.6 erg/${\mathrm{cm}}^{2}$ wall thickness 70...

10.1103/physrevb.46.14578 article EN Physical review. B, Condensed matter 1992-12-01

Doping decreased oxygen vacancies in ceramics, resulting high breakdown field strength and excellent energy storage performances.

10.1039/d0tc03035j article EN Journal of Materials Chemistry C 2020-01-01

HfO2 thin film is deposited on p-Si substrates by RF magnetron sputtering apparatus and annealed at 750 °C for 10 min with O2 atmosphere. Spectral analysis shows that films have good transmittance to light, especially ultraviolet band. The layers belong monoclinic phase its thickness about 50 nm. In the Au/HfO2/p-Si structure, photodiode characteristics were studied room temperature compared light current generated under white response more prominent. photocurrent reaches 80 μA repeatable of...

10.1016/j.matdes.2019.108465 article EN cc-by Materials & Design 2019-12-30

Enhancing the availability and reliability of dielectric ceramic energy storage devices is great importance. In this work, (1-[Formula: see text])[Formula: text]–[Formula: text]Bi([Formula: text] (NBT–[Formula: text]BMH) lead-free ceramics were created utilizing a solid-state reaction technique. All NBT–[Formula: text]BMH have single perovskite structure. With increasing BMH doping, grain size shrinks drastically, which greatly enhances breakdown electric field (310 kV/cm at [Formula: =...

10.1142/s2010135x2350008x article EN cc-by-nc Journal of Advanced Dielectrics 2023-03-05

Abstract Artificial neural network‐based computing is anticipated to surpass the von Neumann bottleneck of traditional computers, thus dramatically boosting computational efficiency and showing a wide range promising applications. In this paper, sol−gel deposition was used prepare thin films samarium‐doped hafnium dioxide (Sm:HfO 2 ). When Sm doped at concentration 4%, it mimics biological synapses; meantime, by voltage scanning, an obvious mimicry resistive switching can be detected,...

10.1111/ijac.14693 article EN International Journal of Applied Ceramic Technology 2024-02-01

The development of antiferroelectric materials with large energy density and fast discharge speed makes dielectric capacitors possess great prospects for applications in pulsed power technology. Here, the PbHfO 3 -based ceramics compositions Pb(Hf 1- x Ti )O (PHT, 0.01 ≤ 0.05) were synthesized, their antiferroelectricity phase transition behavior studied. According to tests x-ray diffraction, spectrum, polarization–electric field hysteresis loops, PHT gradually from an orthorhombic symmetric...

10.34133/energymatadv.0025 article EN cc-by Energy Material Advances 2023-01-01

Dielectric capacitors prepared by antiferroelectric (AFE) materials have the advantages of large power density and fast discharge ability. It has been a focus on improvement recoverable energy (Wrec) energy–density (Wdis) in AFE ceramics. To address above issue, optimizing proportion components is proposed for enhancing ceramic antiferroelectricity, ultimately improving breakdown strength (Eb) Wrec. In this work, an ultrahigh Wrec (14.3 J/cm3) with excellent efficiency (η) 81.1% obtained...

10.1063/5.0199206 article EN cc-by-nc-nd Journal of Applied Physics 2024-03-01

In contrast to most ferromagnetic materials, the low-temperature phase of MnBi exhibits an increased coercivity, Hc, with temperature. μ0Hc has a value 0.2 T at room temperature, and rises dramatically maximum 1.9 550 K. temperature region near its value, Hc is much larger than that Nd-Fe-B very-low-temperature coefficient. For this reason, great potential as permanent magnet material high temperatures. To describe dependence we develop hybrid domain-wall pinning model which combines...

10.1063/1.352668 article EN Journal of Applied Physics 1993-05-15

Abstract Current-induced magnetization reversal via spin-orbit torques (SOTs) has been intensively studied in heavy-metal/ferromagnetic-metal/oxide heterostructures due to its promising application low-energy consumption logic and memory devices. Here, we systematically study the function of Joule heating SOTs current-induced using Pt/Co/SmO x Pt/Co/AlO structures with different perpendicular magnetic anisotropies (PMAs). The SOT-induced effective fields, anisotropy field, switching field...

10.1038/s41598-018-31201-2 article EN cc-by Scientific Reports 2018-08-22

A novel lead-free relaxor ferroelectric ceramics, (1-x)NaNbO3-xBi(Mg0.5Hf0.5)O3 [NN-xBMH, x = 0.00, 0.05, 0.10, 0.15, 0.20 and 0.25] were designed fabricated for the first time via standard solid-phase reaction method. The dielectric, ferroelectric, impedance properties of NN-xBMH ceramics tested. Normal ferroelectrics induced into with introduction BMH, hysteresis loops became slender; This is beneficial to improve energy storage density efficiency ceramic capacitors. Superior breakdown...

10.1016/j.rinp.2022.106194 article EN cc-by Results in Physics 2022-12-26

Precise segmentation of unmanned aerial vehicle (UAV)-captured images plays a vital role in tasks such as crop yield estimation and plant health assessment banana plantations. By identifying classifying planted areas, areas can be calculated, which is indispensable for accurate predictions. However, segmenting plantation scenes requires substantial amount annotated data, manual labeling these both timeconsuming labor-intensive, limiting the development large-scale datasets. Furthermore,...

10.3389/fpls.2024.1508549 article EN cc-by Frontiers in Plant Science 2025-01-07

The von Neumann bottleneck in traditional computers has hindered the rapid development of artificial intelligence. To improve computational efficiency, memristors have become a preferred device to mimic synaptic behavior and achieve neuromorphic computing, thus attracting widespread attention. In this work, La:HfO 2 /ZrO /La:HfO thin films were prepared via sol–gel deposition. When Zr was inserted as an interlayer into 6% La-doped HfO , significant resistance switching (RS) detected through...

10.1142/s0217979225501619 article EN International Journal of Modern Physics B 2025-03-08

Antiferroelectric (AFE) materials demonstrate potential application in pulse power systems and energy-storage devices due to outstanding density (PD) rapid charge-discharge capability. Simultaneously achieving a high discharge energy (Wdis) large AFE ceramics remains key research focus. In this work, method for optimizing parameters is proposed ameliorating the grain size of ceramic enhancing antiferroelectricity, ultimately breakdown strength (Eb). Therefore, an excellent recoverable (Wrec)...

10.1021/acsami.5c03234 article EN ACS Applied Materials & Interfaces 2025-05-09
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