A5056713209- Magnetic properties of thin films
- Magnetic Properties and Applications
- 2D Materials and Applications
- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Quantum and electron transport phenomena
- Physics of Superconductivity and Magnetism
- Graphene research and applications
- Magnetic and transport properties of perovskites and related materials
- Advanced Memory and Neural Computing
- Topological Materials and Phenomena
- Theoretical and Computational Physics
- Advanced Condensed Matter Physics
- ZnO doping and properties
- Perovskite Materials and Applications
- Crystallography and molecular interactions
- Magnetic Field Sensors Techniques
- Semiconductor materials and devices
- Multiferroics and related materials
- MXene and MAX Phase Materials
- Boron and Carbon Nanomaterials Research
- Laser-Matter Interactions and Applications
- Ferroelectric and Negative Capacitance Devices
- Magnetic Properties of Alloys
- Semiconductor Quantum Structures and Devices
Lanzhou University
2016-2025
Guizhou University
2021-2022
Institute of Modern Physics
2016
Chinese Academy of Sciences
2016
Jilin University
2011-2013
Fudan University
2005-2008
Southeast University
2005
In this letter, we demonstrate that few-layer orthorhombic arsenene is an ideal semiconductor. Owing to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of approximately 1 eV. addition, these bandgaps can be further tuned in its nanoribbons. Based on so-called acoustic phonon limited approach, carrier mobilities are predicted approach high several thousand square centimeters per volt–second and simultaneously exhibit...
Magnetic molecular materials with a chiral configuration are attractive candidates for sensing, information storage, and spintronics. Herein, we report the first example of two-dimensional hybrid perovskite ferromagnets, (R-MPEA)2CuCl4 (S-MPEA)2CuCl4. These two compounds exhibit strong oppositely signed circular dichroism signals clear ferromagnetic behaviors. measurements revealed high saturation magnetization up to 12.5 emu g–1. The coexistence chirality ferromagnetism enabled successful...
An ideal semiconducting material should simultaneously hold a considerable direct band gap and high carrier mobility. A 2D planar compound consisting of zigzag chains C-C B-N atoms, denoted as BC2N, would be good candidate. It has 2 eV, which can further tuned by changing the layer number. At same time, our first-principles calculations show that few-layer BC2N possesses The mobility around one million sqaure centimeters per volt-second is obtained at its three-layer. As study demonstrated,...
We investigated the anomalous Hall effect and longitudinal magnetoresistance in ferrimagnetic Co <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">90</sub> Gd xmlns:xlink="http://www.w3.org/1999/xlink">10</sub> thin films with thicknesses from 5 to 35 nm temperatures 80 300 K. As temperature increases K, saturation magnetization of 720 844 emu/cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> . However, scaling law σ...
Two-dimensional (2D) hybrid perovskites have shown many attractive properties associated with their soft lattices and multiple quantum well structure. Herein, we report the synthesis characterization of two new multifunctional 2D perovskites, (PED)CuCl4 (BED)2 CuCl6 , which show reversible thermochromic behavior, dramatic temperature-dependent conductivity change, strong ferromagnetism. Upon temperature crystals exhibit a color change between yellow red-brown. The structural changes were...
Using first-principles calculations we demonstrate for the first time that few-layer orthorhombic arsenic possesses a negative Poisson's ratio. For single layer of arsenic, ratio is predicted to be ∼−0.09. As number layers increases, magnitude increases and finally approaches limit at four layers, becoming very close bulk value −0.13. To understand these layer-dependent ratios, propose rigid mechanical model in which intra-layer bond lengths normal in-layer plane play key roles.
Based on first-principles calculations, we present a quantum confinement mechanism for the band gaps of blue phosphorene nanoribbons (BPNRs) as function their widths. The BPNRs considered have either armchair or zigzag shaped edges both sides with hydrogen saturation. Both two types are shown to be indirect semiconductors. An enhanced energy gap around 1 eV can realized when ribbon's width decreases ∼10 Å. underlying physics is ascribed effect. More importantly, parameters describe obtained...
Abstract Multilevel remanence states have potential applications in ultra‐high‐density storage and neuromorphic computing. Continuous tailoring of the multilevel by spin‐orbit torque (SOT) is reported perpendicularly magnetized Pt/Co/IrMn heterostructures. Double‐biased hysteresis loops with only one state can be tuned from positively or negatively single‐biased SOT controlled sign exchange‐bias field. The associated heights sub‐loops are continually changed tuning ratio oriented...
Abstract The finding of an extremely large magnetoresistance effect on silicon based p–n junction with vertical geometry over a wide range temperatures and magnetic fields is reported. A 2500% ratio the Si observed at room temperature field 5 T applied bias voltage only 6 V, while 25 000% achieved 100 K. current‐voltage ( I–V ) behaviors under various external obey exponential relationship, significantly enhanced by both contributions electric inhomogeneity carrier concentrations variation....
Abstract The interfacial Dzyaloshinskii–Moriya interaction (DMI) in ferromagnetic/non‐magnetic‐metal bilayers is essential to stabilize chiral spin textures for potential applications. Recent works reveal that the interlayer DMI beneficial designing 3D possess fundamental importance and associated technological promises. Here, DM constants are determined quantitatively synthetic ferromagnetic/antiferromagnetic Pt/Co/Pt/Ru/Pt/Co/Ta structures. results demonstrate shows uniaxial anisotropic...
For polycrystalline $\mathrm{NiFe}/\mathrm{FeMn}$ bilayers, we have observed and quantified the rotation of pinning direction in exchange bias training recovery effects. During consecutive hysteresis loops, strongly depends on magnetization reversal mechanism ferromagnet layer. The interfacial uncompensated magnetic moment antiferromagnetic grains may be irreversibly switched rotated when process layer is accompanied by domain wall motion rotation, respectively.
Abstract We investigate the Dirac cone in α -graphdiyne, which is a predicted flat one-atom-thick allotrope of carbon using first-principles calculations. -graphdiyne derived from graphene where two acetylenic linkages (-C ≡C-) are inserted into single bonds (-C-C-). Thus, possesses larger lattice constant subsequently affects its electronic properties. Band structures show that exhibits similar points and to graphene. Further, tight-binding method used exploit linear dispersion vicinity...
Abstract Current-induced magnetization reversal via spin-orbit torques (SOTs) has been intensively studied in heavy-metal/ferromagnetic-metal/oxide heterostructures due to its promising application low-energy consumption logic and memory devices. Here, we systematically study the function of Joule heating SOTs current-induced using Pt/Co/SmO x Pt/Co/AlO structures with different perpendicular magnetic anisotropies (PMAs). The SOT-induced effective fields, anisotropy field, switching field...
Magnetic skyrmions have significant potential for applications in storage and logic devices, but the ability to control skyrmion motion is key their success. To realize controlled motion, vertical spin current-driven methods employing, e.g., Hall or inverse galvanic effect, are efficient; thus, magnetic heterostructures featuring large spin-orbit torques appealing. In this paper, we report on observation of room-temperature Pt/Co/W multilayers. The interfacial Dzyaloshinskii-Moriya...
Abstract Ferromagnetic semiconductors (FMS) enable simultaneous control of both charge and spin transport carriers, they have emerged as a class highly desirable but rare materials for applications in field‐effect transistors quantum computing. Organic–inorganic hybrid perovskites with high compositional adjustability structural versatility can offer unique benefits the design FMS has not been fully explored. Here, series molecular FMSs based on 2D organic–inorganic perovskite structure,...
For FeNi/FeMn bilayers, the angular dependence of exchange bias shows hysteresis between clockwise and counterclockwise rotations, as a new signature. The decreases for thick antiferromagnet layers. Calculations have clearly shown that orientation spins also exhibits rotations. This furnishes an interpretation macroscopic behavior ferromagnetic layer in terms thermally driven evolution magnetic state layer.
Magnetization switching via charge current induced spin-orbit torques (SOTs) in heavy metal/ferromagnetic metal/heavy metal heterostructures has become an important issue due to its potential applications high stability and low energy dissipation spintronic devices. In this work, based on a Pt/Co/Ta structure with perpendicular magnetic anisotropy (PMA), we report the effect of inserting non-metal C interlayer between Co Ta current-induced magnetization switching. A series measurements...
Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that ferromagnetic coupling intrinsic property has never been reported before. Moreover, further confirm it from ab initio calculations. We show measured should be attributed to π states at edges, where electron-electron...
In contrast to commonly used means such as the magnetic field, here an electric field is achieve a large valley splitting in van der Waals (vdW) heterostructure WSe2/CrI3. CrI3 contributes spin moment. The pushes valence bands of Cr atoms close those W associated with pseudospin so that they can interact through exchange interaction. opposite helicities at K and K' points realize 10.5 meV under 0.1 V Å−1. underlying physics stems from interlayer charge transfer, where conservation plays role.
Anisotropic MR effect is seen in a non-magnetic p–n junction due to the space charge region being modulated by an external magnetic field.
Abstract Two‐dimensional (2D) hybrid perovskites have shown many attractive properties associated with their soft lattices and multiple quantum well structure. Herein, we report the synthesis characterization of two new multifunctional 2D perovskites, (PED)CuCl 4 (BED) 2 CuCl 6 , which show reversible thermochromic behavior, dramatic temperature‐dependent conductivity change, strong ferromagnetism. Upon temperature crystals exhibit a color change between yellow red‐brown. The structural...
We report on the magnetoresistance in different crystallographic directions of epitaxial ferromagnetic Fe30Co70 thin films with magnetization rotated film plane. A negative single crystal anisotropic (SCAMR) is found when current along easy axis [110], and SCAMR can be tuned to conventional positive one flows hard [100]. This finding explained comprehensively by a magnetocrystalline anisotropy (MCA) symmetry-adapted model expanded direction, which represented as MCA-independent term cos 2φM...