A5080539238- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Organic Light-Emitting Diodes Research
- Organic Electronics and Photovoltaics
- Luminescence and Fluorescent Materials
- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Advanced Thermoelectric Materials and Devices
- Topological Materials and Phenomena
- Semiconductor Quantum Structures and Devices
- Phase-change materials and chalcogenides
- Heusler alloys: electronic and magnetic properties
- Liver Disease Diagnosis and Treatment
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Magnetic Properties and Applications
- Optical properties and cooling technologies in crystalline materials
- Lipid metabolism and disorders
- Photonic and Optical Devices
- Magnetic Properties and Synthesis of Ferrites
- Lanthanide and Transition Metal Complexes
- Cancer, Hypoxia, and Metabolism
- Semiconductor materials and interfaces
- Magnetic properties of thin films
First Affiliated Hospital of Zhengzhou University
2023-2025
Chinese Academy of Sciences
2021-2025
Aerospace Information Research Institute
2021-2025
Chongqing University of Posts and Telecommunications
2018-2020
Lanzhou University
2014-2018
In this letter, we demonstrate that few-layer orthorhombic arsenene is an ideal semiconductor. Owing to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of approximately 1 eV. addition, these bandgaps can be further tuned in its nanoribbons. Based on so-called acoustic phonon limited approach, carrier mobilities are predicted approach high several thousand square centimeters per volt–second and simultaneously exhibit...
An ideal semiconducting material should simultaneously hold a considerable direct band gap and high carrier mobility. A 2D planar compound consisting of zigzag chains C-C B-N atoms, denoted as BC2N, would be good candidate. It has 2 eV, which can further tuned by changing the layer number. At same time, our first-principles calculations show that few-layer BC2N possesses The mobility around one million sqaure centimeters per volt-second is obtained at its three-layer. As study demonstrated,...
Using first-principles calculations we demonstrate for the first time that few-layer orthorhombic arsenic possesses a negative Poisson's ratio. For single layer of arsenic, ratio is predicted to be ∼−0.09. As number layers increases, magnitude increases and finally approaches limit at four layers, becoming very close bulk value −0.13. To understand these layer-dependent ratios, propose rigid mechanical model in which intra-layer bond lengths normal in-layer plane play key roles.
Based on first-principles calculations, we present a quantum confinement mechanism for the band gaps of blue phosphorene nanoribbons (BPNRs) as function their widths. The BPNRs considered have either armchair or zigzag shaped edges both sides with hydrogen saturation. Both two types are shown to be indirect semiconductors. An enhanced energy gap around 1 eV can realized when ribbon's width decreases ∼10 Å. underlying physics is ascribed effect. More importantly, parameters describe obtained...
Recently, 27 new half-Heusler compounds XYZ (X = Co, Rh, Fe, Ru, Ni; Y Sc, Ti, V; Z P, As, Sb, Si, Ge, Sn, Al, Ga, In) with 18 valence electrons are proposed and their bandgaps span a wide range of 0.10–1.39 eV, which have great potential applications in varied areas. Note that the predicted on gradient-corrected Perdew-Burke-Ernzerhof functional, underestimates magnitude bandgap. To obtain accurate bandgaps, we recalculate them based Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional. Our...
Van der Waals heterostructures composed of different two-dimensional films offer a unique platform for engineering and promoting photoelectric performances, which highly demands the understanding photocarrier dynamics. Herein, large-scale vertically stacked with MoS2 ReSe2 monolayers are fabricated. Correspondingly, carrier dynamics have been thoroughly investigated using ultrafast spectroscopies, including Terahertz (THz) emission spectroscopy, time-resolved THz spectroscopy (TRTS),...
Photocarrier dynamics of the ${\mathrm{ZrTe}}_{3}$ under pressure are investigated using optical pump-probe (OPOP) spectroscopy in combination with a diamond anvil cell. A prominent laser heating effect is manifested, characterized by significant changes profiles and an elongation echo period as pump fluence increased. Furthermore, this found to be enhanced at pressures below 2 GPa, gradually diminishing until it completely disappears 6 GPa. Additionally, estimated sound velocity high...
Unveiling the nonlinear interactions between terahertz (THz) electromagnetic waves and free carriers in two-dimensional materials is crucial for development of high-field high-frequency electronic devices. Herein, we investigate THz transport dynamics a monolayer graphene/MoS2 heterostructure using time-resolved spectroscopy with intense pulses as probe. Following ultrafast photoexcitation, interfacial charge transfer establishes nonequilibrium carrier redistribution, leaving holes graphene...
In contrast to commonly used means such as the magnetic field, here an electric field is achieve a large valley splitting in van der Waals (vdW) heterostructure WSe2/CrI3. CrI3 contributes spin moment. The pushes valence bands of Cr atoms close those W associated with pseudospin so that they can interact through exchange interaction. opposite helicities at K and K' points realize 10.5 meV under 0.1 V Å−1. underlying physics stems from interlayer charge transfer, where conservation plays role.
Transition-metal dichalcogenides are good candidates for spintronic technologies owing to their giant intrinsic spin-orbit splitting. Manipulation of energy splitting is highly desirable further practical devices. In this work, we provide a simple route modulate in van der Waals ${\mathrm{MoTe}}_{2}/{\mathrm{WTe}}_{2}$ heterostructure. By introducing an external electric field pointing from ${\mathrm{MoTe}}_{2}$ ${\mathrm{WTe}}_{2}$, the individual layers can be switched more than 10 meV....
A monolayer of orthorhombic arsenic (arsenene) is a promising candidate for nano-electronic devices due to the uniquely electronic properties. To further extend its practical applications, an additional layer introduced tune structures. Four layer-stacking manners, namely AA-, AB-, AB'-, and AC-stacking, are constructed studied through using first-principles calculations. Compared with monolayer, indirect-direct gap transition realized in AB-stacking. More importantly, semimetal feature...
Pentagonal palladium diselenide (PdSe2) stands out for its exceptional optoelectronic properties, including high carrier mobility, tunable bandgap, and anisotropic electronic optical responses. Herein, we systematically investigate photocarrier dynamics in PdSe2 ribbons using polarization-resolved pump-probe spectroscopy. In thin with a semiconductor phase, the are found to be dominated by intraband hot-carrier cooling, interband recombination, exciton effect, showing weak crystalline...
The transport properties of charge carriers in MXene, a promising material, have been studied using terahertz time-domain spectroscopy (THz-TDS) to examine its potential applications optical and electronic devices. However, previous studies limited by narrow frequency ranges, which hindered the understanding intrinsic mechanisms carrier MXenes. To address this issue, ultrabroadband THz-TDS with frequencies up 15 THz investigate complex photoconductances MXene (Ti
High-performance tandem blue phosphorescent organic LEDs (T-BPhOLEDs) are important for solid-state lighting and flat-panel display. Herein, we have realized a highly efficient T-BPhOLED by using the photovoltaic-type charge generation unit (CGU) of LiF/Al/fullerene/zinc-phthalocyanine/MoO3, emitter bis[2-(4,6-difluorophenyl)pyridinato-C2,N](picolinato)iridium(III) electron transporter 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene. The ability CGU could be enhanced photovoltaic function...
It is well known that anisotropy determines the preferred transport direction of carriers. To manipulate an exciting topic in two-dimensional materials, where carriers are confined within individual layers. In this work, it found uniaxial strain can tune electronic 90°-twisted bilayer phosphorene. unique structure, zigzag one layer corresponds to armchair other and vice versa. Owing complementary directional (zigzag or armchair) deformation response opposite layer, in-plane positive...
Combined measurements including Raman scattering and optical pump-probe spectroscopy (OPPS) are carried out to investigate the lattice electron dynamics of ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}$ under hydrostatic pressures. The pressure evolutions nonequilibrium photocarrier dynamics, containing hot relaxations coherent acoustic phonons, have been accessed up 30 GPa. With increasing pressure, vibrations manifest anomalies around 3 GPa 5 GPa, indicating sudden changes electron-phonon couplings...
A heterostructure formed of topological and nontopological half-Heusler compounds provides a means to tune band inversion. In this work, we study the stabilities [111] [100] LuPtBi/LuAuSn superlattices. Since superlattice is more stable than one, explore inversion in superlattice. By increasing number LuPtBi layers, energy gap can be tuned from 0.63 −1.50 eV, where negative value indicates The underlying mechanism involves alignment, internal electric field, quantum confinement. Our offers...
Shenfu Injection(SFI) is praised for the high efficacy in treatment of septic shock. However, precise role SFI sepsis-associated lung injury not fully understood. This study investigated protective effect on by a clinical trial and an animal experiment focusing hypoxia-inducing factor-1α(HIF-1α)-mediated mitochondrial autophagy. For trial, 70 patients with treated emergency intensive care unit First Affiliated Hospital Zhengzhou University were included. The levels interleukin(IL)-6 tumor...
Carrier mobility is a crucial character for electronic devices since it domains power dissipation and switching speed. Materials with certain high carrier mobility, equally, unveil rich unusual physical phenomena elusive in their conventional counterparts. As consequence, the methods to enhance of materials receive immense research interests due potential applications more effective enrichment phenomena. For instance, introducing flat hexagonal boron nitride (h-BN) substrate has been...