A5076089919- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Polydiacetylene-based materials and applications
- TiO2 Photocatalysis and Solar Cells
- Antimicrobial Peptides and Activities
- Metal and Thin Film Mechanics
- Graphene research and applications
- Advanced biosensing and bioanalysis techniques
- Chemical and Physical Properties of Materials
- Inorganic and Organometallic Chemistry
Universidade Federal da Grande Dourados
2020
Paul Drude Institute for Solid State Electronics
2018
Universidade Estadual Paulista (Unesp)
2011-2017
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial layer structures synthesized SiC. The different differ mainly in their total number layers. Because is found be etched under active N exposure, the direct only achieved multilayer structures. analysis nanowire ensembles prepared Raman spectroscopy transmission electron microscopy...
A bio-interfactant layer is applied on hydrophobic surfaces to immobilize antimicrobial peptides.
The combined effects of substrate temperature, orientation, and energetic particle impingement on the structure GaN films grown by reactive radio-frequency magnetron sputtering are investigated. Monte-Carlo based simulations employed to analyze energies species generated in plasma colliding with growing surface. Polycrystalline at temperatures ranging from 500 1000 °C clearly showed a dependence orientation texture surface morphology (c- a-plane sapphire) which (0001) planes were parallel A...
We investigate the formation of GaN nanowires in plasma-assisted molecular beam epitaxy on epitaxial graphene prepared SiC(0001) using surface graphitization method an inductively heated furnace. The pristine layer structure is characterized by presence atomically flat terraces and steps which are covered single-layer bi-layer graphene, respectively. investigated under N-rich growth conditions for substrate temperatures between 725 800°C. Regardless temperature, found to degrade during due...
This paper investigates the geometrical, electronic, and optical properties of a Ga24N24H46 nanoparticle using Density Functional Theory (DFT). The results show that this maintains geometrical parameters very similar to those GaN crystal, although it was noticed bond length along direction [0001] is smaller than base tetrahedron, which opposite what occurs in crystal. bandgap passivated calculated with DFT greater while an estimate for hydrogen-free Ga24N24 structure shows much lower...