José Humberto Dias da Silva

ORCID: 0000-0003-0969-6481
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About
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Research Areas
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • GaN-based semiconductor devices and materials
  • Chalcogenide Semiconductor Thin Films
  • Metal and Thin Film Mechanics
  • Ga2O3 and related materials
  • Silicon Nanostructures and Photoluminescence
  • Phase-change materials and chalcogenides
  • Conducting polymers and applications
  • Copper-based nanomaterials and applications
  • Gas Sensing Nanomaterials and Sensors
  • Advanced Photocatalysis Techniques
  • Electronic and Structural Properties of Oxides
  • Bone Tissue Engineering Materials
  • Perovskite Materials and Applications
  • TiO2 Photocatalysis and Solar Cells
  • Dental materials and restorations
  • Science and Education Research
  • Diamond and Carbon-based Materials Research
  • Silicon and Solar Cell Technologies
  • Chemistry Education and Research
  • Semiconductor Quantum Structures and Devices
  • Corrosion Behavior and Inhibition
  • Semiconductor materials and interfaces

Universidade Estadual Paulista (Unesp)
2016-2025

Nanomed (Brazil)
2019-2021

Faculdade de Tecnologia e Ciências
2018

Federal Institute of São Paulo
2017

Hospital Universitário da Universidade de São Paulo
2017

Universidade de São Paulo
2016

University of Utah
1998

Universidade Estadual de Campinas (UNICAMP)
1987-1995

We present a study of amorphous hydrogenated silicon-nitrogen alloys (a-${\mathrm{SiN}}_{\mathit{x}}$:H, 0\ensuremath{\le}x1.5) prepared by the rf reactive sputtering method. By combining results x-ray photoemission spectroscopy, electron-energy-loss and optical absorption, all atom bond densities kind mean number nearest neighbors Si N atoms are determined. For x1, Si-N bonds increase at expense Si-Si bonds; almost fully coordinated three atoms, whereas have N, H, other as neighbors....

10.1103/physrevb.42.5677 article EN Physical review. B, Condensed matter 1990-09-15

In this work, niobium oxide films were deposited by reactive magnetron sputtering under different oxygen flow rate and applied as electron transport layer in perovskite solar cells. It was found that the deposition made using 3.5 sccm of resulted with better electrical properties which helped extraction photogenerated electrons to external circuit, improving Jsc consequently device efficiency. addition, photoluminescence measurements, we a charge transfer from TiO2/niobium film at flow.

10.3389/fchem.2019.00050 article EN cc-by Frontiers in Chemistry 2019-02-06

Pure and Mn-doped TiO2 films have been deposited by sputtering technique onto SiO2 substrates. The display a compact columnar morphology, as revealed scanning electron microscopy. X-ray diffraction Raman scattering results provide evidence that the pure are predominantly anatase phase, but increase in Mn concentration favors rutile phase. optical characterization shows systematic decrease value of band gap an tail states with concentration. Magnetization measurements purely diamagnetic...

10.1021/jp210682d article EN The Journal of Physical Chemistry C 2012-03-23

Oxygen-deficient TiO2 films with enhanced visible and near-infrared optical absorption have been deposited by reactive sputtering using a planar diode radio frequency magnetron configuration. It is observed that the increase in coefficient more effective when O2 gas supply periodically interrupted rather than decrease of partial pressure deposition plasma. The at 1.5 eV increases from about 1 × 102 cm−1 to 4 103 as result flow discontinuity. A red-shift ∼0.24 edge also observed. High...

10.1063/1.4724334 article EN Journal of Applied Physics 2012-06-01

Along with poor implant-bone integration, peri-implant diseases are the major causes of implant failure. Although such primarily triggered by biofilm accumulation, a complex inflammatory process in response to corrosive-related metallic ions/debris has also been recognized as risk factor. In this regard, boosting titanium (Ti) surface silane-based positive charges, cationic coatings have gained increasing attention due their ability kill pathogens and may be favorable for corrosion...

10.1021/acsbiomaterials.3c00491 article EN ACS Biomaterials Science & Engineering 2023-08-10

Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) immersion ion implantation (PIIID). The same precursors used in the production of each pair type film, such as a-C:H, using both PECVD PIIID. Optical properties, namely refractive index, n, absorption coefficient, α, optical gap, ETauc, these via transmission spectra ultraviolet–visible near-infrared range...

10.1016/j.apsusc.2013.05.013 article EN publisher-specific-oa Applied Surface Science 2013-05-13

The combined effects of substrate temperature, orientation, and energetic particle impingement on the structure GaN films grown by reactive radio-frequency magnetron sputtering are investigated. Monte-Carlo based simulations employed to analyze energies species generated in plasma colliding with growing surface. Polycrystalline at temperatures ranging from 500 1000 °C clearly showed a dependence orientation texture surface morphology (c- a-plane sapphire) which (0001) planes were parallel A...

10.1063/1.4828873 article EN Journal of Applied Physics 2013-11-13

The influence of the reactive magnetron sputtering deposition power on determining stoichiometry and structure cobalt oxide polycrystalline films is investigated using experimental simulated data. Direct current discharges with powers in 80−240W range are tested a metallic Co target an Ar+O2 plasma. X-ray diffraction results show that lower favor spinel Co3O4 phase, while higher produce presenting rocksalt CoO phase. Computer simulations indicate processes occur poisoned regime, depositions...

10.1116/1.5046952 article EN Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2018-11-01

Thermal annealings of amorphous gallium antimonide films were accompanied using Raman spectroscopy, both for stoichiometric and nonstoichiometric compositions. The prepared by flash evaporation on silicon substrates. Structural changes induced the heat treatments: an increasing degree crystallization as a function annealing temperature is observed. Sb clusters are found to crystallize before GaSb does, dependence corresponding peak intensity with (occurring in two regimes) explained. A...

10.1063/1.359486 article EN Journal of Applied Physics 1995-04-15

We study the relationship between optical gap and optical-absorption tail breadth for case of amorphous gallium arsenide (a-GaAs). In particular, we analyze spectra corresponding to some recently prepared a-GaAs samples. The each sample is determined. Plotting as a function breadth, note that trend, similar found cases hydrogenated silicon germanium, also a-GaAs. impact alloying on spectrum associated with briefly examined.

10.1063/1.1797541 article EN Journal of Applied Physics 2004-12-03
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