A5053512546- Luminescence Properties of Advanced Materials
- Solid State Laser Technologies
- Glass properties and applications
- Optical properties and cooling technologies in crystalline materials
- Spectroscopy and Laser Applications
- Laser-induced spectroscopy and plasma
- Acoustic Wave Resonator Technologies
- X-ray Diffraction in Crystallography
- Nonlinear Optical Materials Research
- Solidification and crystal growth phenomena
- Inorganic Fluorides and Related Compounds
- Crystallization and Solubility Studies
- Solid-state spectroscopy and crystallography
- solar cell performance optimization
- Organic and Molecular Conductors Research
- Laser Design and Applications
Tongji University
2020-2024
Shandong Management University
1989
In this study, the power generation difference between east-west and north-south orientation of vertically installed heterojunction solar cell (HJT) modules was deeply discussed. East-west oriented HJT module has 30% higher generation, especially in desert photovoltaic (PV) with a bimodal distribution. While south-north one single peak, same as normal PV modules. Vertical technology also less land occupation, which is great significance for optimizing design systems.
Ho 3+ , Pr : Sc 2 O 3 crystal was successfully grown by the TGT method. The spectroscopic properties of were analyzed. absorption cross section Ho, Pr: at 636 nm 1.58×10 –20 cm . J-O theory applied to analyze fluorescence 2.9 μm. intensity parameters Ω t (t=2,4,6), radiative transition rates, branching ratios and lifetime calculated. exhibited strong emission 2110 2864 with a stimulated 2.4 × 10 –21 4.2 respectively. 5 I 6 7 levels measured be 1.64 ms 5.74 ms. These results show that would...
Pr 3+ -doped GdScO 3 single crystal was successfully grown by the Czochralski (Cz) method. Polarized absorption spectra, polarized fluorescence and decay curves were measured at room temperature. The spectroscopic property of Pr:GdScO for new-wavelength transition in near infrared (NIR) region discussed first time. cross-sections 600 nm calculated to be 0.39×10 −20 cm 2 (E∥a), 0.32×10 (E∥b) 0.4×10 (E∥c). emission cross sections 1053 1 D energy level 0.86×10 0.79×10 0.78×10 (E∥c), with FWHM...
High quality 0.3 at.% Pr, 2.5 Yb:BaF 2 and 0.6 3 single crystals were grown by the temperature gradient technique (TGT). The absorption spectra, fluorescence decay curves energy transfer process are measured analyzed at room temperature. By co-doping Yb 3+ ions as a sensitizer of Pr ions, broad near-infrared band emission from 1 G 4 level 1.3 µm is observed in /Yb : BaF crystal with low maximum phonon for first time. In addition, visible can be detected luminescence components mainly...
The EFG technique was used to successfully grow a crystal of Ho,Pr:Lu 2 O 3 . crystal's spectroscopic features were investigated. has an absorption cross-section 0.47 × 10 −20 cm at 647 nm and 0.20 1147 nm. fluorescence characteristics the grown 2.9 µm examined using J-O theory. Calculations made for intensity parameters Ω t (t = 2, 4, 6), radiative transition rates, branching ratios, lifetime. demonstrated significant emission 2104 2893 nm, with stimulated cross sections 2.96 −21 4.24 ,...
Edge-defined film-fed growth (EFG) was successfully used to grow a Ho 3+ doped Sc 2 O 3 crystal. At room temperature, the spectroscopic characteristics of Ho:Sc crystal were measured. 650 nm, 1144 and 1922nm, respectively, peak absorption cross sections 0.430 × 10 −20 cm , 0.159 0.513 with complete widths at half maximum 16 22 122 nm. The crystal's 5 I 7 → 8 6 emission cross-sections 5.205 −21 5.059 respectively. measured fluorescence lifetimes 0.135 ms 8.389 ms, results demonstrated great...
A series of high quality x %Pr 3+ :BaF 2 ( = 0.6, 1, 2); (1%Pr , 2%Na + ):BaF ; y %Ca 2+ 3, 5) and (0.6%Pr 10%R (R Y, Lu, Gd) crystals were grown via a temperature gradient technique (TGT).
Abstract The growth rates of crystal interfaces have been measured by using a new technique — the laser diffraction metering technique. It is simple, visualized, fast and has high precision. This paper describes basic principle, operation method precision