Experimental evaluation of the ability to use structures based on porous silicon for solar cells and LEDs is performed.Spectral characteristics photosensitivity with an upper layer carbide (nSiC / p-porSi heterostructures) are studied, as well photoluminescence spectra doped erbium (porSi : Er structures).1.

The paper discusses the efficiency of converting radionuclide energy into electrical inside a semiconductor structure in context betavoltaic application. In molecular composition Silicon Carbide structures, Carbon-14 atoms functionally serve as source radiochemical decay energy, and conductivity component n- or p-type is able to directly convert this form. proposed version beta-converter based on C-14 has worldwide novelty, since used concentration at level an alloying impurity that replaces...

The concept, model, and examples of activated nanoscale heterojunctions on special silicon carbide substrates to ensure maximum power with combined geometric quantitative scaling semiconductor energy converter chips are considered. issue efficiency conversion separation electron-hole pairs is investigated. A variant optimizing the solution implemented by variations in sequences layers an increase concentration direction movement nonequilibrium carriers for further increasing voltage charge...

To construct beta converters with maximum efficiency it is necessary to carry out the theoretical calculation in order determine their optimal parameters - geometry of structure, thickness deposition radioisotope layer, depth and width p-n junction, others. date, many different models calculations methods had been proposed. There are fairly simple based on Bethe-Bloch formula rate generation electron-hole pairs, by equivalent circuits. Also, Monte-Carlo method used for modeling converters....

In this work the investigations of technology, morphology, electric and photoelectric properties silicon photosensitive structures have been represented. The included layers carbide porous silicon. layer was formed on surface single crystal substrates by method electrolytic etching in fluoride containing solutions. Plates with different microrelief (polished, honed, textured) were used. Carbidization samples leading to formation heterostructures SiC/Si conducted gas endotaxin a hydrogen...

Abstract The 3C-SiC Silicon Carbide phase doped by P, Ga, and N atoms was analyzed in the framework of Density Functional Theory. physical parameters, changing with time due to concentration increase, were calculated. Crucial statements about existence deepest level checked. Calculations band structures performed using software applications VASP Siesta. plane wave basis used first case orbital frame virtual crystal approach second one.

One of the main ways increasing reliability sensors physical quantities on basis high-temperature and radiation-hardened heterostructure β-SiC/Si is analysis technological aspects its forming (endotaksiya) regarding concentration distribution dot defects various nature, their probable models association with participation foreign impurity. Besides, reversible processes opens optimization kinetics diffusive mass transfer at phase transformation substrate silicon into a film carbide silicon. In...

The aim of this investigation is to consider the internal processes in contact zone semiconductor with radionuclide microalloying: diffusion atoms during endotaxy, after decay radionuclides, formation electrons and material features arising from such diffusion. DFT approach paper aimed at obtaining evidence vacancy mechanism Radionuclide diffuse into growing layer silicon carbide on level isoelement microalloying, forming, depending phase, effects that energetically manifest themselves as...

The endotaxia is the process of growth one crystal structure inside volume another. In this case we are talking about formation Silicon Carbide film in substrate. substrate placed gas chamber. sample exposed to stream methane CH 4 at temperature 1360 - 1380 ◦ C and normal pressure. Moreover, contains both stable Carbon isotope 12 radioactive 14 , hydrogen H 2 acts as a carrier Carbon.

The article presents the research results of semiconductor silicon carbide (porous) structures with implanted carbon-14. experimental measurements collected data on parameters photovoltaic energy conversion light quanta into a photo-EMF to confirm efficiency p-n junction, an evaluation effectiveness introduction carbon-14 in molecule electrophysical measurements. In process used technology solid-phase transformation surface monocrystalline substrate phase by chemical transport carbon...

Abstract The authors consider their own CVD technology for the SiC growing on a Si substrate in order to create beta converter. Since converter contains heavy C-14 atom, finished works as an ”inner sun”, and structure has specific mark * name: SiC*/Si. Authors focus problems of theoretical description of: 1) growth SiC*/Si film (with atoms inside) position p-n junction doping process; 2) method placement radioisotopes into semiconductor material; 3) physical properties radioisotopes; 4)...

Abstract The authors consider heterostructures of silicon carbide obtained during endotaxy on substrates. question is raised in connection with the description process itself at structural level. Authors focus technological aspects formation a stable β-SiC/Si heterostructure by relation to evolution point defects various nature and their probable association models participation radionuclide impurity micro-alloying level: 1) growth SiC*/Si thin layer C-14 atoms doping process; 2) physical...

In this work the optical properties of carbidized silicon nanowires (SiNW) are investigated.