A5020118291- Copper Interconnects and Reliability
- Semiconductor materials and devices
- Molecular Junctions and Nanostructures
- Electrodeposition and Electroless Coatings
- 3D IC and TSV technologies
- Advanced Surface Polishing Techniques
- Metal and Thin Film Mechanics
- Diamond and Carbon-based Materials Research
- Electronic Packaging and Soldering Technologies
- Force Microscopy Techniques and Applications
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Nanoporous metals and alloys
- Surface Modification and Superhydrophobicity
- Advanced machining processes and optimization
- Nanofabrication and Lithography Techniques
- Adhesion, Friction, and Surface Interactions
- Anodic Oxide Films and Nanostructures
- Mesoporous Materials and Catalysis
- Advanced materials and composites
- Advanced MEMS and NEMS Technologies
- Corrosion Behavior and Inhibition
- Analytical Chemistry and Sensors
- Electronic and Structural Properties of Oxides
- Mechanical and Optical Resonators
IMEC
2016-2025
KU Leuven
2006-2014
Kyoto University
2007
Integrating metal–organic frameworks (MOFs) into microfabrication processes will benefit from controlled vapor-phase deposition techniques. This study presents a molecular layer method that enables area-selective and oriented growth of zeolitic imidazolate framework-8 (ZIF-8) films. Substrates functionalized with self-assembled monolayers (SAMs) different end groups (alkyl, phenyl, hydroxyl, carboxyl, amine, imidazole) allow tuning the degree crystallographic orientation in resulting MOF...
We report for the first time demonstration of 3D integrated circuits obtained by die-to-die stacking using Cu Through Silicon Vias (TSV). The TSV process is inserted between contact and M1 our reference 0.13 mum CMOS on 200 mm wafers. top die thinned down to 25 bonded landing wafer Cu-Cu thermo-compression. Both wafers contain finished at M2 evaluate impact both FEOL BEOL. results confirm no degradation performance. functionality various ring oscillator topologies that include inverters...
The performance of modern chips is strongly related to the multi-layer interconnect structure that interfaces semiconductor layer with outside world. resulting demand continuously reduce k-value dielectric in these interconnects creates multiple integration challenges and encourages search for novel materials. Here we report a strategy metal-organic frameworks (MOFs) as gap-filling low-k dielectrics advanced on-chip interconnects. method relies on selective conversion purpose-grown or native...
Ceria-based and fumed silica-based systems are compared for oxide chemical mechanical polishing (CMP) in terms of defectivity removal rate (RR). slurries yield RR ca. threefold that conventional silica but result enhanced defectivity. To reduce defectivity, composite structures comprising a 300 nm polymer core coated by 14 ceria particles have been investigated. The shows properties highly tunable variation synthesis parameters, while the major advantage coating is an action abrasive...
Spectacular progress in developing advanced Si circuits with reduced size, along the track of Moore's law, has been relying on necessary developments wet cleaning nanopatterned wafers to provide contaminant free surfaces. The most efficient is achieved when complete wetting can be realized. In this work, ordered arrays silicon nanopillars a hitherto unexplored small scale have used study behavior nanomodulated surfaces substantial range surface treatments and geometrical parameters. With use...
Integrating bottom-up area-selective building-blocks in microelectronics has a disruptive potential because of the unique capability engineering new structures and architectures. Atomic layer deposition (ALD) is an enabling technology, yet understanding surfaces their modification crucial to leverage ALD (AS-ALD) this field. The general selectivity mechanisms compatibility plasma surface modifications with existing materials processes, both at research production scale, will greatly...
Area-selective atomic layer deposition (AS-ALD) has attracted a great deal of attention in recent years for self-aligned accurate pattern placement with subnanometer thickness control. The authors demonstrate methodology to achieve AS-ALD by using undecanethiol and octadecanethiol masking layers deposited selectively vapor phase on copper versus low-κ. Their approach been demonstrated combination an situ Hf3N4 ALD. In spectroscopic ellipsometer was performed investigate the blocking ability...
Atomic force microscopy was employed to probe the mechanical properties of surface-charged polymethylmethacrylate (PMMA)-based terpolymer and composite core-silica shell particles in air water media. The were achieved with two different approaches: using a silane coupling agent (composite A) or attractive electrostatic interactions B) between core shell. Young's moduli (E) 4.3+/-0.7, 11.1+/-1.7, 8.4+/-1.7 GPa measured for PMMA-based terpolymer, A, B, respectively. In water, E decreases...
Abstract A 3‐aminopropyltrimethoxysilane‐derived self‐assembled monolayer (NH 2 SAM) is investigated as a barrier against copper diffusion for application in back‐end‐of‐line (BEOL) technology. The essential characteristics studied include thermal stability to BEOL processing, inhibition of diffusion, and adhesion both the underlying SiO dielectric substrate Cu over‐layer. Time‐of‐flight secondary ion mass spectrometry X‐ray spectroscopy (XPS) analysis reveal that over‐layer closes at 1–2‐nm...
Nanopatterned electrodes (nominal trench width = 45 nm) have been generated to enable electrochemical measurements of metals in a damascene integration scheme. Fabrication is done at 300 mm wafer scale using standard semiconductor technology processes. A morphological characterization wet‐chemical Cu digital etching process performed transmission electron microscopy and atomic force microscopy, both which provide insights into the material properties surface features. Results reveal that...
Chemical mechanical planarization (CMP) is a triboelectrochemical process dominated by and chemical-assisted wear. The choice of abrasive used in this fundamental importance. In study, oxide CMP using novel polymer-core silica-shell composites were compared with conventional colloidal silica as abrasives terms removal rate surface finishing. composite particles achieved either creating chemical bonds silane coupling agents or tuning the pH to form electrostatic attractive interactions...
The selective deposition of materials on predefined areas a substrate is crucial importance for various applications, such as energy harvesting, microelectronic device fabrication, and catalysis. A representative example area-confined the metal film interconnect material in multilevel metallization schemes CMOS technology. This allows formation structures with standard lithographical techniques while minimizing pattern misalignment overlay improving uniformity across wafer. In this work,...
The results of a wet alkaline seed deposition process directly on thin adhesion promoter film, such as chemical vapor (CVD) Co, are presented. This solution has been successfully used for copper plating blanket and patterned through-silicon-via (TSVs) wafers covered with either silicon oxide/physical (PVD) Ta/CVD Co or oxide/PVD Ti/CVD stacks. Such direct plated films were layers subsequent from an in-house-made acidic Cu bath model additives poly(ethylene glycol) (PEG), bis(3-sulfopropyl)...
Self-assembled monolayers (SAMs) from an 11-cyanoundecyltrichlorosilane (CN-SAM) precursor were deposited on porous SiCOH low-k dielectrics with three different pore radii, namely, 1.7, 0.7, and lower than 0.5 nm. The first pretreated either O2 or He/H2 plasma in order to generate silanol groups the hydrophobic pristine surface. Subsequently, SAMs chemically grafted distribution films depends diameter: if diameter is smaller size of precursors, SAM molecules are confined surface, while...
The results of copper chemical mechanical planarization (CMP) experiments with a model slurry chemistry based on the combination glycine–water–benzotriazole , and different types composite A (silane coupling agents between polymer core silica shell) B (electrostatic attraction abrasives, are presented. While presence BTA allows 10-fold reduction in static etch rate from combining an oxidizer complexing agent leads to removal rates higher than . Different surface morphology root-mean-square...
Higher performance, higher operation speed and volume shrinkage require high 3D interconnect densities. A way to meet the density specifications is further increase A.R. of TSV interconnection. This requires integration highly conformal thin films deposition techniques in flows, particularly for metallization. In this study, seed layer enhancement applied regular PVD Cu metalizing diameter 2μm aspect-ratio 15:1. The results reported paper open a new path process TSVs provide versatile...
Selective electroless deposition of Co directly on dielectric surfaces, promoted by amino-terminated organic films in combination with a selective Pd catalyst.
The use of sacrificial self-assembled monolayers (SAMs) to prepare clean n-type GaAs (100) surfaces without band bending in vacuo is demonstrated. surface passivation using octadecanethiol SAMs after HCl cleaning shown lead an enhancement the room-temperature photoluminescence intensity. Synchrotron-radiation photoelectron spectroscopy (SRPES) finds that interfacial oxide between and SAM remains below detection limit. Evidence for both Ga–S As–S bonds at GaAs–thiolate interface found....