A5036696664- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Topological Materials and Phenomena
- ZnO doping and properties
- Molecular Junctions and Nanostructures
- Semiconductor materials and interfaces
- Advanced Photocatalysis Techniques
- Fuel Cells and Related Materials
- Multiferroics and related materials
- Electrocatalysts for Energy Conversion
- Advancements in Semiconductor Devices and Circuit Design
- Conducting polymers and applications
- Perovskite Materials and Applications
- TiO2 Photocatalysis and Solar Cells
- Advancements in Battery Materials
Hongik University
2025
Nanjing University of Science and Technology
2023-2024
Changsha University of Science and Technology
2018-2023
Changsha University
2018
This paper describes a simple design methodology to develop layered PtSe2 catalysts for hydrogen evolution reaction (HER) in water electrolysis operating under ultralow overpotentials. approach relies on the transfer of mechanically exfoliated flakes gold thin films prestrained thermoplastic substrates. By relieving prestrain, tunable level uniaxial internal compressive and tensile strain is developed as result spontaneously formed surface wrinkles, giving rise band structure modulations...
Functionalizing graphene to develop on-demand nanodevices is highly desirable, but still remains challenging. Here, we theoretically propose the functionalization of armchair nanoribbons by low-concentration metal (M) atom (M = Ti, Ni, Sn, or Hg) doping and investigate structural stability electronic behaviors these doped systems in depth. The calculated binding energy formation as well molecular dynamics simulation show that geometries hybridized ribbons are rather stable. With doping,...
Recently, the arsenic monolayer has been successfully fabricated by micromechanical stripping. However, it is a non-magnetic semiconductor, including its derivatives. Here, we theoretically explore how to induce magnetism for arsenene armchair nanotubes (AsANTs) with low-concentration TM (TM = Co, Y, Rh, Ni, Mo, Ru) atom doping, especially focusing on their structural stability, magneto-electronic property, carrier mobility, and strain effects. The high stability of these doped tubes are...
Monolayer C
Abstract Recently, experimentally available Fe 3 GeTe 2 (FGT) monolayer has attracted tremendous research interest due to its long-range ferromagnetic (FM) order. Here, we systematically study the magneto-electronic and electric contact properties of FGT-based van der Waals (vdW) heterostructures integrated by arsenene (As) with multiple stacking patterns. The low binding energy (−117.69 −52.69 meV atom −1 ) proves their highly geometric stability, high magnetized (91.61–213.61 meV/unit...
To obtain miniaturized and high-performance nanoelectronic devices, it is still technical problem to realize ohmic contact at metal-semiconductor interface. Here, we construct H-(T-)NbS2/MoSi2P4 vdWHs theoretically explore their mechanic electronic behaviors, focusing on electrical features tunability as well Schottky junction device properties. The suitable Poisson’s ratio sufficient rigidity suggest that such are highly favorable act electrode or channel materials. quasi-ohmic for...
Two-dimensional (2D) antiferromagnetic manganese chalcogenides have been successfully synthesized recently. However, the electronic and magnetic properties of these new materials not clearly understood. The absence net magnetization a large band gap may hinder their application. In this work, we systematically studied semihydrogenated MnX (donated as H@MnX, X = S, Se, Te) monolayers. hydrogen atoms can stably adsorb onto Mn ions. hydrogenated sublayer, couplings between adjacent ions become...
CrI3 monolayer has attracted much attention, but it a very low magnetic stability, with Curie temperature of 45K, seriously limiting the practical applications. To find solutions for this issue, we construct CrI3/As vdW heterojunctions (vdWHs). Calculations show that such vdWHs are half-semiconductor excellent mechanical property and 75.9 K, enhanced by 73.3% compared monolayer, which can be attributed to potential well would become shallower in interfacial Iin atom-layer due weak orbital...
The key solution to achieve high-performance nano-electronic devices depends on solving the contact resistance problem at metal-semiconductor interface. Here, we construct graphene/ MoSi2X4 (X=N, P, As) van der Waals heterojunctions and investigate their mechanical, electronic, optical properties systematically, especially focusing electrical features. It is found that such intrinsic hold a low Schottky barrier height (SBH) better behavior. Particularly, more ideal can be realized by...