A5025996425- 2D Materials and Applications
- MXene and MAX Phase Materials
- Graphene research and applications
- Molecular Junctions and Nanostructures
- Advanced Photocatalysis Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Carbon and Quantum Dots Applications
- ZnO doping and properties
- Boron and Carbon Nanomaterials Research
- Semiconductor materials and interfaces
- Perovskite Materials and Applications
- Graphene and Nanomaterials Applications
Harbin University of Science and Technology
2024
Changsha University of Science and Technology
2022-2023
Abstract The vertical stacking of different two-dimensional materials to construct van der Waals heterostructures (vdWHs) opens up a promising platform for designing high-efficiency photocatalysts. Direct Z-scheme photocatalytic dissociation have received much attention in recent years, which charge carriers migrate directly between two semiconductors without redox mediators. Here, the electronic and optical properties as well solar-to-hydrogen conversion efficiency g-GeC/ PtSe 2 vdWHs are...
Abstract Graphene is broadly applied as sensitive sensing material results from its superb features. Concurrently, a derivative of graphene with 0D structure, quantum dots (GQDs) offer more possibilities supportive due to adjustable size and functional group modification. In this work, GQDs are introduced single-layer (SLG) based humidity sensor enhance the performance. Specifically, consistent resistance response relative (RH) extended range 10%–60% 10%–90% by contrary original SLG sensor....
To obtain miniaturized and high-performance nanoelectronic devices, it is still technical problem to realize ohmic contact at metal-semiconductor interface. Here, we construct H-(T-)NbS2/MoSi2P4 vdWHs theoretically explore their mechanic electronic behaviors, focusing on electrical features tunability as well Schottky junction device properties. The suitable Poisson’s ratio sufficient rigidity suggest that such are highly favorable act electrode or channel materials. quasi-ohmic for...
CrI3 monolayer has attracted much attention, but it a very low magnetic stability, with Curie temperature of 45K, seriously limiting the practical applications. To find solutions for this issue, we construct CrI3/As vdW heterojunctions (vdWHs). Calculations show that such vdWHs are half-semiconductor excellent mechanical property and 75.9 K, enhanced by 73.3% compared monolayer, which can be attributed to potential well would become shallower in interfacial Iin atom-layer due weak orbital...
The key solution to achieve high-performance nano-electronic devices depends on solving the contact resistance problem at metal-semiconductor interface. Here, we construct graphene/ MoSi2X4 (X=N, P, As) van der Waals heterojunctions and investigate their mechanical, electronic, optical properties systematically, especially focusing electrical features. It is found that such intrinsic hold a low Schottky barrier height (SBH) better behavior. Particularly, more ideal can be realized by...