Steven S.-L. Zhang

ORCID: 0000-0003-0632-8413
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About
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Research Areas
  • Magnetic properties of thin films
  • Quantum and electron transport phenomena
  • Topological Materials and Phenomena
  • Physics of Superconductivity and Magnetism
  • Advanced Condensed Matter Physics
  • Graphene research and applications
  • Magnetic and transport properties of perovskites and related materials
  • Magnetic Field Sensors Techniques
  • Theoretical and Computational Physics
  • Electronic and Structural Properties of Oxides
  • Crystallization and Solubility Studies
  • Magneto-Optical Properties and Applications
  • X-ray Diffraction in Crystallography
  • 2D Materials and Applications
  • Magnetic Properties and Applications
  • Magnetic Properties of Alloys
  • MXene and MAX Phase Materials
  • ZnO doping and properties
  • Multiferroics and related materials
  • Advanced biosensing and bioanalysis techniques
  • Advanced Memory and Neural Computing
  • Cold Atom Physics and Bose-Einstein Condensates
  • Characterization and Applications of Magnetic Nanoparticles
  • Advanced Physical and Chemical Molecular Interactions
  • Rare-earth and actinide compounds

Case Western Reserve University
2020-2024

Shanghai Jiao Tong University
2024

Qingdao University of Science and Technology
2023

Ministry of Education of the People's Republic of China
2023

Chimie Biologique pour le Vivant
2023

Argonne National Laboratory
2017-2021

University of Missouri
2015-2020

University of Arizona
2009-2015

We propose an extension of the Landau-Lifshitz-Gilbert (LLG) equation by explicitly including role conduction electrons in magnetization dynamics conducting ferromagnets. The temporal and spatial dependent order parameter m(r,t) generates both electrical spin currents that provide dissipation energy angular momentum processing magnet. resulting LLG contains highly dependence damping term thus micromagnetic simulations based on standard should be reexamined for involving narrow domain walls...

10.1103/physrevlett.102.086601 article EN Physical Review Letters 2009-02-25

In a semiconductor heterostructure, the Coulomb interaction is responsible for electric current drag between two 2D electron gases across an impenetrable insulator. For metallic layers separated by ferromagnetic insulator (FI) layer, can be mediated nonequilibrium magnon of FI. We determine using semiclassical Boltzmann approach with proper boundary conditions electrons and magnons at metal-FI interface.

10.1103/physrevlett.109.096603 article EN Physical Review Letters 2012-08-29

The exchange interaction between the conduction electrons and magnetic moments at interface leads to mutual conversion electron spin current magnon current. We introduce a concept of convertance which quantitatively measures induced by accumulation created interface. predict phenomena on charge drag across insulator spacer for several layered structures.

10.1103/physrevb.86.214424 article EN Physical Review B 2012-12-26

An intriguing property of a three-dimensional (3D) topological insulator (TI) is the existence surface states with spin-momentum locking, which offers new frontier exploration in spintronics. Here, we report observation type Hall effect 3D TI ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ film. The resistance scales linearly both applied electric and magnetic fields exhibits $\ensuremath{\pi}/2$ angle offset respect to its longitudinal counterpart, contrast usual $\ensuremath{\pi}/4$ between linear...

10.1103/physrevlett.123.016801 article EN publisher-specific-oa Physical Review Letters 2019-07-01

Tailoring Gilbert damping of metallic ferromagnetic thin films is one the central interests in spintronics applications. Here we report a giant anisotropy epitaxial ${\mathrm{Co}}_{50}{\mathrm{Fe}}_{50}$ with maximum-minimum ratio 400%, determined by broadband spin-torque resonance as well inductive resonance. We conclude that origin this variation spin orbit coupling for different magnetization orientations cubic lattice, which further corroborated from magnitude anisotropic...

10.1103/physrevlett.122.117203 article EN publisher-specific-oa Physical Review Letters 2019-03-21

Recent experiments have revealed nonlinear features of the magnetoresistance in metallic bilayers consisting a heavy metal (HM) and ferromagnetic (FM). A small change longitudinal resistance bilayer has been observed when reversing direction either applied in-plane current or magnetization. We attribute such transport behavior to spin-polarization dependence electron mobility FM layer acting concert with spin accumulation induced that by Hall originating bulk HM layer. An explicit expression...

10.1103/physrevb.94.140411 article EN publisher-specific-oa Physical review. B./Physical review. B 2016-10-17

The sensitivity and accuracy of electrochemiluminescence (ECL) sensors for detecting small-molecule pollutants in environmental water are affected not only by nonspecific adsorption proteins other molecules but also bacterial interference. Therefore, there is an urgent need to develop ECL sensor with antifouling antibacterial functions environment monitoring. Herein, a highly efficient sensing interface (PSBMA@SiO2-MXene) based on zwitterionic sulfobetaine methacrylate (SBMA) nanospheres...

10.1021/acs.analchem.3c03555 article EN Analytical Chemistry 2023-10-27

We explore the second order bilinear magnetoelectric resistance (BMER) effect in d-electron-based two-dimensional electron gas (2DEG) at SrTiO_{3}(111) surface. find evidence of a spin-split band structure with archetypal spin-momentum locking Rashba for in-plane component. Under an out-of-plane magnetic field, we BMER signal that breaks sixfold symmetry electronic dispersion, which is fingerprint presence momentum-dependent spin Relativistic calculations reproduce this texture and indicate...

10.1103/physrevlett.120.266802 article EN publisher-specific-oa Physical Review Letters 2018-06-29

Discoveries of the interfacial topological Hall effect (THE) provide an ideal platform for exploring physics arising from interplay between topology and magnetism. The is closely related to Dzyaloshinskii-Moriya interaction (DMI) at interface spin textures. However, it difficult achieve a sizable THE in heterostructures due stringent constraints on constituents heterostructures, such as strong spin-orbit coupling (SOC). Here, we report observation giant signal 1.39 μΩ·cm van der Waals...

10.1021/acsnano.1c05519 article EN ACS Nano 2021-08-30

Two-dimensional van der Waals (vdWs) materials have gathered a lot of attention recently. However, the majority these Curie temperatures that are well below room temperature, making it challenging to incorporate them into device applications. In this work, we synthesized room-temperature vdW magnetic crystal Fe5GeTe2 with temperature T K, and studied its properties by vibrating sample magnetometry (VSM) broadband ferromagnetic resonance (FMR) spectroscopy. The experiments were performed...

10.1088/2053-1583/ac2028 article EN 2D Materials 2021-08-23

We predict a nonlinear Hall effect in certain Weyl semimetals with broken inversion symmetry. When the energy dispersions about pairs of nodes are skewed---the cones ``tilted''---the concerted actions anomalous velocity and chiral anomaly give rise to effect. This conductivity is linear both electric magnetic fields depends critically on tilting cones. also show that this does not rely finite Berry curvature dipole, contrast intrinsic quantum was recently observed type-II semimetals.

10.1103/physrevb.103.045105 article EN Physical review. B./Physical review. B 2021-01-05

In a bilayer consisting of an insulator (I) and ferromagnetic metal (FM), interfacial spin orbit scattering leads to mixing the two conducting channels FM, which results in unconventional anisotropic magnetoresistance (AMR). We theoretically investigate magnetotransport such structures by solving spinor Boltzmann transport equation with generalized Fuchs-Sondheimer boundary condition that takes into account effect at interface. find new AMR exhibits peculiar angular dependence can serve as...

10.1103/physrevb.92.024412 article EN publisher-specific-oa Physical Review B 2015-07-13

A topological insulator (TI) interfaced with a magnetic (MI) may host an anomalous Hall effect (AHE), quantum AHE, and (THE). Recent studies, however, suggest that coexisting phases in TI/MI heterostructures result AHE-associated response resembles THE but fact is not. This Letter reports genuine structure has only one phase. The shows the temperature range of T = 2–3 K AHE at 80–300 K. Over 3–80 K, two effects coexist show opposite dependencies. Control measurements, calculations,...

10.1021/acs.nanolett.0c03195 article EN Nano Letters 2020-12-23

The interplay between electronic transport and antiferromagnetic order has attracted a surge of interest as recent studies have shown that moderate change in the spin orientation collinear antiferromagnet may significant effect on band structure. Among numerous electrical probes to read out such magnetic order, unidirectional magnetoresistance (UMR), where resistance changes under reversal current direction, can provide rich insights into properties spin-orbit coupled systems. However, UMR...

10.1103/physrevx.12.021069 article EN cc-by Physical Review X 2022-06-30

The anomalous Hall effect is deemed to be a unique transport property of ferromagnetic metals, caused by the concerted action spin polarization and spin-orbit coupling. Nevertheless, recent experiments have shown that also occurs in nonmagnetic metal (Pt) contact with magnetic insulator (yttrium iron garnet (YIG)), even when precautions are taken ensure there no induced magnetization metal. We propose theory this based on combined spin-dependent scattering from interface bulk At variance...

10.1103/physrevlett.116.136601 article EN publisher-specific-oa Physical Review Letters 2016-04-01

Weyl semimetals (WSMs) are a newly discovered class of quantum materials which can host number exotic bulk transport properties, such as the chiral magnetic effect, negative magneto-resistance, and anomalous Hall effect. In this work, we investigate theoretically spin-to-charge conversion in bilayer consisting WSM normal metal (NM), where charge current be induced by an spin injection at interface. We show that exhibits peculiar anisotropy: it vanishes along magnetization orientation WSM,...

10.1103/physrevlett.123.187201 article EN Physical Review Letters 2019-10-30

Voltage-controlled spintronic devices utilizing the spin degree of freedom are desirable for future applications, and may allow energy-efficient information processing. Pure current can be created by thermal excitations in magnetic systems via Seebeck effect (SSE). However, controlling such currents, only electrical means, has been a fundamental challenge. Here, we investigate voltage control SSE antiferromagnetic insulator Cr2O3. We demonstrate that response generated this material...

10.1126/sciadv.abg1669 article EN cc-by-nc Science Advances 2021-09-29

Spin-polarized antiferromagnets have recently gained significant interest because they combine the advantages of both ferromagnets (spin polarization) and (absence net magnetization) for spintronics applications. In particular, spin-polarized antiferromagnetic metals can be useful as active materials their high electrical thermal conductivities ability to host strong interactions between charge transport magnetic spin textures. We review phenomena in which interplay metallic conductivity...

10.1146/annurev-conmatphys-042924-123620 article EN Annual Review of Condensed Matter Physics 2024-10-14

Anisotropic magnetoresistance (AMR), whose physical origin is attributed to the combination of spin dependent scattering and orbital coupling (SOC), usually displays simple angular dependence for polycrystalline ferromagnetic metals. By including generic Hall (SH) terms in Ohm's law, we explicitly show that various magneto-transport phenomena such as anomalous (AH), SH, planar (PH) AMR could be quantitatively related bulk We also discuss how affected by presence interfacial SOC magnetic...

10.1063/1.4855935 article EN Journal of Applied Physics 2014-01-06

The spin-momentum locking of surface states in topological materials can produce a resistance that scales linearly with magnetic and electric fields. Such bilinear magnetoelectric (BMER) effect offers new approach for information reading field sensing applications, but the effects demonstrated so far are too weak or low temperatures. This article reports first observation BMER Dirac semimetals; responses were measured at room temperature substantially stronger than those reported previously....

10.1126/sciadv.abo0052 article EN cc-by-nc Science Advances 2022-07-29

We employ quadratic-response Kubo formulas to investigate the nonlinear magnetotransport in bilayers composed of a topological insulator and magnetic insulator, predict both unidirectional magnetoresistance planar Hall effects driven by interfacial disorder spin-orbit scattering. These exhibit strong dependencies on Fermi energy relative strength exchange interaction between spins Dirac electrons magnetization. In particular, as becomes comparable energy, coefficients can be greatly...

10.1103/physrevb.109.024421 article EN Physical review. B./Physical review. B 2024-01-16

Abstract Spintronics offers promising routes for efficient memory, logic, and computing technologies. The central challenge in spintronics is electrically manipulating detecting magnetic states devices. electrical control of magnetization via spin-orbit torques effective both conducting insulating layers. However, the readout latter inherently difficult, limiting their use practical applications. Here, we show magnetoresistive detection perpendicular reversal an ferrimagnet, terbium iron...

10.1038/s42005-024-01604-x article EN cc-by Communications Physics 2024-04-03
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