A5101412401- 2D Materials and Applications
- Electrocatalysts for Energy Conversion
- Advanced Photocatalysis Techniques
- Graphene research and applications
- MXene and MAX Phase Materials
- GaN-based semiconductor devices and materials
- Advanced battery technologies research
- Perovskite Materials and Applications
- Creativity in Education and Neuroscience
- Advanced Sensor and Energy Harvesting Materials
- Thermal properties of materials
- Advanced Thermoelectric Materials and Devices
- Ionic liquids properties and applications
- Chalcogenide Semiconductor Thin Films
- Reading and Literacy Development
- Ga2O3 and related materials
- CO2 Reduction Techniques and Catalysts
- Nanopore and Nanochannel Transport Studies
- Conducting polymers and applications
- Membrane-based Ion Separation Techniques
- Educational Games and Gamification
- Media, Communication, and Education
- Mind wandering and attention
- Semiconductor materials and interfaces
- Membrane Separation Technologies
The University of Tokyo
2022-2023
National Taiwan Normal University
2015-2022
King Abdullah University of Science and Technology
2016-2022
National Yang Ming Chiao Tung University
2019
Guangxi Normal University
2016
Institute of Atomic and Molecular Sciences, Academia Sinica
2014
The remote hydrogen plasma is able to create abundant S-vacancies on amorphous molybdenum sulfide (a-MoSx ) as active sites for evolution. results demonstrate that the plasma-treated a-MoSx exhibits superior performance and higher stability than Pt in a proton exchange membrane based electrolyzers measurement proof-of-concept of industrial application.
Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness unique physical properties. One of the challenges posed by 2D is large source/drain (S/D) series resistance due their thinness, which may be resolved thickening source drain regions. Recently explored lateral graphene-MoS21-3 graphene-WS21,4 heterostructures shed light on resolving mentioned issues superior ohmic contact behaviors. However, recently...
We report the band alignment parameters of GaN/single-layer (SL) MoS2 heterostructure where GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. confirm that an SL measuring separation and position room temperature micro-Raman E12g A1g modes, absorbance, micro-photoluminescence bandgap studies. This in good agreement with HRTEM cross-sectional analysis. The determination offset at GaN/SL-MoS2 heterojunction carried out high-resolution X-ray photoelectron...
A well-dispersed PtCu alloy nanoparticles (NPs) on three-dimensional nitrogen-doped graphene (PtCu/3D N-G) electrocatalyst has been successfully synthesized by a conventional hydrothermal method combined with high-efficiency microwave-assisted polyol process. The morphology, composition, and structures are well-characterized scanning electron microscopy, transmission Raman spectroscopy, X-ray powder diffraction, photoelectron spectroscopy. Cyclic voltammograms illustrate that the as-prepared...
Molybdenum sulfide has recently attracted much attention because of its low cost and excellent catalytical effects in the application hydrogen evolution reaction (HER). To improve HER efficiency, many researchers have extensively explored various avenues such as material modification, forming hybrid structures or modifying geometric morphology. In this work, we reported a significant enhancement electrocatalytic activity MoSx via growing on Tetracyanoquinodimethane (TCNQ) treated carbon...
We study the band discontinuity at GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. confirm that was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron micro-Raman, absorbance, microphotoluminescence spectra. determination of offset parameters GaN/SL-WSe2 heterojunction obtained high-resolution X-ray photoelectron...
2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large-area electronics circuits strongly relies on wafer-scale, selective growth quality TMDs. Here, a scalable method, namely, metal-guided (MGSG), is reported. success control over the transition-metal-precursor vapor pressure, first concurrent two dissimilar monolayer TMDs, demonstrated in conjunction with lateral or vertical TMD...
Thin-film electronics pliably laminated onto the epidermis for noninvasive, specific, and multifunctional sensing are ideal wearable systems health monitoring information technologies. However, it remains a critical challenge to fabricate ultrathin compliant skin-like sensors with high imperceptibility sensitivities. Here we report design of conductive hydrogen-substituted graphdiyne (HsGDY) nanofilms conjugated porous structure inherent softness on-skin that allow minimization stress...
Recent interest in two-dimensional materials has resulted ultra-thin devices based on the transfer of transition metal dichalcogenides (TMDs) onto other TMDs or III-nitride materials. In this investigation, we realized p-type monolayer (ML) MoS2, and intrinsic GaN/p-type MoS2 heterojunction by GaN overgrowth ML-MoS2/c-sapphire using plasma-assisted molecular beam epitaxy. A systematic nitrogen plasma (N2*) gallium (Ga) irradiation studies are employed to understand individual effect doping...
High-quality nitride nanowires on large-area layered transition metal dichalcogenides are first reported, which yielded light-emitting diodes (LEDs) with superior performance.
Abstract This study aimed to determine how Chinese children adapt orthography–phonology correspondence by acquiring phonetic radical awareness (PRA). used two important encoding approaches (rote and orthographic approaches) as the developmental trajectory, in which present hypothesized that phonological (PA) exerts not only a direct influence on PRA but also an indirect through paired– associate learning (PAL). We explored whether association between PA PAL is affected complexity of visual...
A direct band gap that solely exists in monolayer semiconducting transition metal dichalcogenides (TMDs) endows strong photoluminescence (PL) features, whereas multilayer TMD structures exhibit quenched PL due to the direct-to-indirect transition. We demonstrate (such as MoS2 and WS2) nanoscrolls with a preserved fabricated by an effective facile method of solvent-driven self-assembly. The resultant nanoscrolls, exhibiting up 11 times higher intensity than remanent monolayer, are carefully...
A high-surface-area Cu electrode, fabricated by a simple electrochemical anodization-reduction method, exhibits high activity and selectivity for CO2 reduction at low overpotential in 0.1 M KHCO3 solution. faradaic efficiency of 37% HCOOH 27% CO production was achieved with the current density 1.5 mA cm−2 −0.64 V vs. RHE, much higher than that polycrystalline Cu. The enhanced catalytic performance is result formation active surface area preferred low-index facets.
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