A5103157241- GaN-based semiconductor devices and materials
- Photocathodes and Microchannel Plates
- Semiconductor materials and interfaces
- nanoparticles nucleation surface interactions
- Advanced Chemical Physics Studies
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Diamond and Carbon-based Materials Research
- Ion-surface interactions and analysis
- Ga2O3 and related materials
- Thin-Film Transistor Technologies
- Catalytic Processes in Materials Science
- Photonic and Optical Devices
- Metal and Thin Film Mechanics
- Silicon Nanostructures and Photoluminescence
- Silicon Carbide Semiconductor Technologies
- Microbial Community Ecology and Physiology
- Advanced Materials and Semiconductor Technologies
- High-pressure geophysics and materials
- Boron and Carbon Nanomaterials Research
- Material Properties and Applications
- Silicon and Solar Cell Technologies
- Carbon Nanotubes in Composites
- Fullerene Chemistry and Applications
- Bacteriophages and microbial interactions
Institute of Tibetan Plateau Research
2024
Chinese Academy of Sciences
2024
University of Chinese Academy of Sciences
2024
Institute of Modern Physics
2003-2006
Fudan University
2003-2006
Nanjing University
1996-2002
Collaborative Innovation Center of Advanced Microstructures
2002
Abstract Viruses are major players in the biosphere, yet little is known about their dynamics and life strategies alpine lakes, particularly those on Tibetan Plateau. We investigated microbial abundance, viral dynamics, 10 high‐altitude lakes found that they harbor high levels of active viruses. Salinity was identified as a crucial factor influencing well strategies. Lytic lysogenic productions moderate‐ high‐salinity were significantly higher than freshwater lakes. A trade‐off between...
The mechanical properties of single-walled nanotubes (SWNTs) filled with small fullerenes (C20, C36 and C60) were investigated using molecular dynamics (MD) simulation. interaction between carbon atoms was described by a combination the many-body Brenner potential two-body pair potential. We found that below critical value strain, stress SWNT increases linearly strain Young's modulus certain different filling densities is almost same for strain. It also observed buckling force, which...
In this paper, the deposition of energetic ${\mathrm{C}}_{2}$ clusters on silicon and diamond surfaces is investigated by molecular dynamics simulation. The impact energy ranges from 0.5 to 60 eV in order compare with experiments diamondlike carbon (DLC) film synthesis femtosecond (fs) pulsed laser deposition. influence as well structure synthesized films addressed. Simulations show that at earlier stage deposition, mobility surface atoms, especially recoil enhanced elevated incident...
Normal-incidence SiGe/Si p–i–n photodetectors with relaxed GeSi alloy layers grown on Si buffer at low temperature and fraction-graded Si1−xGex buffers were fabricated by rapid thermal process/very-low-pressure chemical-vapor deposition. The response wavelength of these detectors ranges from 0.7 to 1.55 μm. peak wavelengths are 0.98 1.06 μm, which the responsivities 2.7 1.8 A/W (−2 V), respectively. 1.3 μm 0.15 0.07 (−5 dark current densities 0.05 0.03 μA/mm2 influences Ge fraction, epilayer...
Thin heteroepitaxial films of Si/sub 1-x-y/Ge/sub x/C/sub y/ have been grown on Si[100] substrates by rapid thermal chemical vapor deposition (RTCVD) using C/sub 2/H/sub 4/ as C source. The composition and microstructure film were characterized Auger Electron Spectroscopy (AES), Raman spectrum Fourier transform infrared spectroscopy (FTIR). results exhibit that lower temperature higher SiH/sub 4//C/sub flow ratio are helpful to form the substitutional improve crystal quality. A possible...
We have studied the optical properties of ultraviolet detector based on GaN epilayer grown 6H-SiC substrate by metalorganic chemical vapor deposition. obtained detectable energy span device up to photocurrent measurement. The spectral responsivity remained nearly constant for wavelengths from 250 365 nm and dropped three orders magnitude within 10 band edge (by 380 nm). was measured a 133 A/W at wavelength 360 under 5-V bias, voltage-dependent performed. Furthermore, an easy method developed...
The transient photoconductivity (PC) properties of a GaN thin film on (0001) sapphire substrate are investigated. decay curves PC obtained by YAG:Nd pulsed laser divided into two special regions, which the beginning and tail corresponding to time constants, 0.1 ms 1.0 ms, respectively. Keeping same light intensity bias voltage, when sample is heated 300/spl deg/C, constants both reduced. It shows that there large number traps at position tens meV below conduction band edge. ascends S-shaped...