High-resolution x-ray photoelectron spectroscopy (XPS) was applied to characterize the electronic structures for a series of high-k materials (HfO2)x(Al2O3)1−x grown on (100) Si substrate with different HfO2 mole fraction x. Al 2p, Hf 4f, O 1s core levels spectra, valence band and energy loss all show continuous changes x in (HfO2)x(Al2O3)1−x. These data are used estimate gap (Eg) (HfO2)x(Al2O3)1−x, offset (ΔEν) conduction (ΔEc) between substrate. Our XPS results demonstrate that values Eg,...

We report a new NBTI phenomenon for p-MOSFETs with ultra thin gate oxides. demonstrate that in CMOS inverter circuit, the interface traps generated under stressing p-MOSFET (corresponding to "high" output state of inverter) are subsequently passivated when drain voltage switches positive "low" inverter). As result, it was found this "Dynamic" (DNBTI) operating circuit prolongs significantly device lifetime while conventional "static" (SNBTI) underestimates lifetime. Furthermore, DNBTI effect...

Burn infliction techniques are poorly described in rat models. An accurate study can only be achieved with wounds that uniform size and depth. We describe a simple reproducible method for creating consistent burn rats.Ten male Sprague-Dawley rats were anesthetized dorsum shaved. A 100 g cylindrical stainless-steel rod (1 cm diameter) was heated to 100℃ boiling water. Temperature monitored using thermocouple. performed two consecutive toe-pinch tests on different limbs assess the depth of...

For the first time, a dynamic negative bias temperature instability (DNBTI) effect in p-MOSFETs with ultrathin gate oxide (1.3 nm) has been studied. The interface traps generated under NBTI stressing corresponding to p-MOSFET operating condition of "high" output state CMOS inverter, are subsequently passivated when drain voltage switches positive "low" inverter. Consequently, this DNBTI significantly prolongs lifetime digital circuit, and conventional static (SNBTI) measurement...

The kinetics of the interfacial layer (IL) growth between Hf aluminates and Si substrate during high-temperature rapid thermal annealing (RTA) in either N2 (∼10 Torr) or high vacuum (∼2×10−5 is studied by high-resolution x-ray photoelectron spectroscopy cross-sectional transmission electron microscopy. significant difference IL observed relatively oxygen-rich (both at 1000 °C) shown to be caused oxygen species from ambient. Our results also show that exhibit much stronger resistance...

The nitrogen-enhanced negative bias temperature instability (NBTI) effect has been studied experimentally and theoretically. It is observed that both the interface state positive fixed charge generation increase linearly with interfacial nitrogen concentration. experimental results can be understood in terms of reaction energies hydrogen trapping reactions at interface, which are obtained from first-principle calculations. These improve our understanding mechanisms responsible for NBTI effect.

For the first time, we perform a systematic investigation of fast and slow components dynamic NBTI (DNBTI) in p-MOSFET with SiON gate dielectric. The new findings are: (1) recent debate DNBTI component measured by conventional DC method G. Chen et al (2003), M. Alam S. Mahapatra (2004) Charkravarthi (2004), V.Huard al. is clarified. We show evidence that due to interface traps N/sub it/ generation passivation. methods used over past years seriously underestimate passivation during...

New findings of interface trap passivation effect in negative bias temperature instability (NBTI) measurement for p-MOSFETs with SiON gate dielectric are reported. We show evidence to clarify the recent debate: recovery V/sub th/ shift phase dynamic NBTI is mainly due traps (N/sub it/), not hole de-trapping ot/). The conventional methods, dc capacitance-voltage and charge pumping, seriously underestimate density N/sub it/. This underestimation dependent during measurement, because...

This brief presents a differential transmit–receive (T/R) switch integrated in 0.18- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$mu hboxm$</tex> standard CMOS technology for wireless applications up to 6 GHz. design employs fully architecture accommodate the challenge of transceivers and improve linearity performance. It exhibits less than 2-dB insertion loss, higher 15-dB isolation, 60 xmlns:xlink="http://www.w3.org/1999/xlink">$~muhbox m...

Most previous studies have reported superior results when blue dye and radiocolloids were used together for sentinel lymph node (SLN) biopsy in early breast cancer. Blue was to perform poorly alone, although more recent found otherwise. This study reviewed the authors' practice of performing SLN with alone.This a retrospective review patients who underwent using alone from 2001 2005, performed selectively always followed by axillary dissection (ALND), 2006 2010, offered all suitable ALND...

The influence of nitrogen concentration at a nitrided oxide/silicon interface on the activation energies both near-interface fixed-charge trapping and state generation caused by negative bias temperature instability stress has been studied quantitatively. It is observed that charge have about same energy for given interfacial concentration. In addition, their are found to follow dependence results suggest origin. A discussion mechanism effect presented.

For the first time, we perform a systematic investigation of fast components dynamic negative biased temperature instability (DNBTI) in p-MOSFET with an ultrathin SiON gate dielectric. Experimental results unambiguously show DNBTI component measured by recently developed measurement method, and this is due to trapping detrapping hole traps N/sub ot/ SiON. The cumulative degradation increases increasing stress frequency. Model simulations are excellent agreement all experimental data.

We present a rare case of 4 limb amputations due to peripheral gangrene which resulted from the use inotropes for septic shock.A 72-year-old woman with no past medical history presented fever and pain in bilateral big toes. She was diagnosed Streptococcal pneumoniae septicaemia started on broad spectrum antibiotics, dopamine noradrenaline intensive care unit. developed all extremities microvascular spasm inotrope were performed electively single stage.The contributed by presence disseminated...

In this letter, we report a first-principles calculation which is well correlated to experiment on the role of nitrogen at Si/SiOxNy interface in negative bias temperature instability (NBTI). Our shows that nitrogen’s lone pair electrons can trap dissociated hydrogen species more easily than oxygen. After trapping, positive charge complex formed and weakening bond strength observed trapping site. Furthermore, as concentration goes beyond 8 at. %, neighboring effect from starts play further...

A one-pass algorithm that performs region expansion in images represented by quadtrees is presented. The changes to black those white pixels within a specified distance of any mode the image. yields significant improvement over previous approaches reducing both number nodes must be considered for and inserted as result expansion. reductions are achieved introducing concepts merging cluster vertex set. Empirical tests show execution time this generally decreases radius increases, whereas...

In this letter, further evidence from atomic modeling is presented to support the proposed nitrogen neighboring effect, which explains two distinct regimes in dependence of negative bias temperature instability (NBTI) degradation on interfacial concentration N/sub int/ (i.e., for int/>8 at. % stronger than that int/<8at. %). Our calculations clearly show enhancement NBTI by becomes when number N atom increases with increasing int/. addition, role also examined terms electronegativity and...

Recently, there has been renewed interest in using the motor nerve to masseter for facial reanimation. This article aims identify ideal segment of reanimation by mapping its anatomy and studying axonal count branches.Fifteen fresh cadaveric heads with 30 nerves were dissected under microscope. The muscle was exposed a preauricular incision, course followed measurements branches taken topography nerve. then harvested en bloc, fixed, axon counts cross-sections recorded ImageJ (an image...

The impact of nitrogen plasma nitridation on the interfacial quality ultrathin oxides (1.8 and 2.6 nm) have been investigated compared with NO nitridation. It is found that plasma-nitrided are more immune to nitridation-induced degradation channel hole mobility, lower intrinsic interface-trap density as NO-nitrided oxides. In addition, can further suppress mobility induced by boron penetration. superior performance attributed its capability incorporating a high level at top oxide surface,...

A detailed description of the application convergent beam electron diffraction (CBED) technique for studying strain propagation in Si1−xGex∕Si blanket wafers as well silicon-based metal–oxide–semiconductor field-effect transistors is presented. Specifically, a simple and robust experimental procedure analysis silicon lattice measurement using CBED this article. The use focused ion milling allows better control thickness site-specific analysis, especially nanoscaled devices. pictorial...