"High speed" in communications often means "high data-rate" and fiber-optic technologies have long been ahead of wireless that regard. However, an overlooked definite advantage links over is waves travel at the speed light c, which about 50% faster than optical fibers as shown Fig. 17.9.1 (top left). This "minimum latency" crucial for applications requiring real-time responses a distance, including high-frequency trading [1]. Further opportunities new might be created if absolute minimum...

A 300 GHz transmitter (TX) fabricated using a 40 nm CMOS process is presented. It achieves 17.5 Gb/s/ch 32-quadrature amplitude modulation (QAM) transmission over six 5 GHz-wide channels covering the frequency range from 275 to 305 GHz. With unity-power-gain <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$f_{\mathrm {max}}$ </tex-math></inline-formula> of NMOS transistor being below GHz, TX adopts power...

Recently, short-distance high-speed wireless communication using a 60 GHz band has been studied for mobile application. To realize higher-speed while maintaining low power consumption application D (110-170 GHz) is promising since it can potentially provide wider frequency band. Thus, we have D-band CMOS circuits to low-power ultrahigh-speed communication. In the band, however, no sufficient device model provided, research generally start from modeling. this paper, design procedure...

Building receivers (RXs) that operate above the transistor unity-power-gain frequency, f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> , is extremely challenging because an LNA-less architecture must be adopted. This paper reports on a 300-GHz CMOS RX operating NMOS /max. Its conversion gain, noise figure, and 3-dB bandwidth are, respectively, −19.5 dB, 27 26.5 GHz. The achieved wireless data rate of 32 Gb/s with 16QAM. It shows...

The vast unallocated frequency band lying above 275GHz offers enormous potential for ultrahigh-speed wireless communication. An overall bandwidth that could be allocated multi-channel communication can easily several times the 60GHz unlicensed of 9GHz. We present a 300GHz transmitter (TX) in 40nm CMOS, capable 32-quadrature amplitude modulation (QAM) 17.5Gb/s/ch signal transmission. It cover range from 275 to 305GHz with 6 channels as shown at top Fig. 20.1.1. Figure 20.1.1 also lists...

There have recently been more and reports on CMOS integrated circuits operating at terahertz (≥ 0.1THz) frequencies. However, design environments techniques are not as well established for RF circuits. This paper reviews recent progress made by the authors in low-power high-speed wireless communication, including device characterization modeling techniques. Low-power data transfer 11Gb/s 19pJ/bit a 7-pJ/bit ultra-low-power transceiver chipset presented.

An ASK transmitter and receiver chipset using 40 nm CMOS technology for wireless communication systems is described, in which a maximum data rate of 10 Gbps power consumption 98.4 mW are obtained with carrier frequency 135 GHz. A simple circuit modulation method to reduce selected the chipsets. To realize multi-gigabit communication, designed consideration group delay optimization.

The vast terahertz frequency band around 300 GHz has a potential to be used for next-generation wireless communication. 300-GHz transceiver been developed using silicon CMOS technology of which the unity-power-gain frequency, $\pmb{f_{\max}}$, is below said band. Possible channel allocation and design are discussed.

The 300-GHz band enables ultrahigh-speed wireless communication because of its vast frequency range. We present a link with 300-GHz-band CMOS transmitter that improves the system signal-to-noise ratio (SNR) by using frequency-doubler-based subharmonic mixer called "square mixer" and an architecture image local oscillator (LO) suppression. It achieved digital transmission at 56 Gbit/s over 5 cm 16-QAM. In addition, we compare performance links figure-of-merit (FoM). This has approximately 7.5...

A 300-GHz CMOS transmitter module with a WR-3.4 waveguide interface is presented. The flip-chip mounted on low-cost multilayered glass epoxy printed circuit board (PCB) and transmission-line-to-waveguide transition back-short structure built of the PCB. measured output power 3-dB bandwidth are approximately −13.5 dBm 10 GHz, respectively. wireless data rate 48 Gbit/s over 5 cm 16-QAM achieved using module.

It is a challenge to design single-mode transmission lines for above 100 GHz following strict rules of modern CMOS processes. This paper reports characteristics three types microstrip in 65 nm up 325 GHz, designed with or without using an auto-dummy exclusion layer. The lowest-loss among the shielded protected metal density requirement met, as commonly done, by placing sidewalls far from signal line allowed rules. other two designs are microstrips One them has high-density auto dummy fill...

Wireless performance of a 300 GHz CMOS transmitter reported recently is presented. digital data transmission at 28 Gbit/s over 5 cm with 16-QAM and 1 m quaternary phase-shift keying was achieved. A figure merit (FoM) for transmit–receive systems that allows comparison diverse configurations (with different modulation formats, antenna gains, distances, etc.) introduced. The turns out to be comparable in other 0.3 THz or higher involving compound-semiconductor photo-mixing technologies....

A QAM-capable 300-GHz transmitter operating above the transistor f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> , covering a 30-GHz bandwidth with multiple channels was recently reported. key enabling component tripler-based up-conversion mixer called "cubic mixer." This paper theoretically and experimentally studies S/N characteristics of such elucidates condition for realizing high single-channel data-rate. 30 Gb/s 32QAM 21 64QAM...

In this paper, we propose a method of reducing the number measurements when bias optimization an amplifier is required. We also provide reconstructing entire model from reduced measurement results. fabricated eight-stage D-band low-noise (LNA) using 65-nm CMOS technology. Applying these methods to LNA maximize figure merit, obtained 14.4-dB gain with ultra-low power consumption 22.6 mW.

It is known that the THRU standard (a transmission line) used for thru-reflect-line (TRL) calibration/de-embedding S-parameter measurement has to be long enough only a single electromagnetic mode propagates at its center it work reliably. But ideally, TRL standards should occupy as little precious silicon real estate possible. This paper attempts experimentally find out how above 110GHz up 170 GHz through measurements of lines various lengths. The results indicate length least 400...

A 300-GHz CMOS receiver module with a WR-3.4 waveguide interface is presented. The flip-chip mounted on low-cost multilayered glass epoxy printed circuit board (PCB). transmission-line-to-waveguide transition back-short structure built into the PCB. measured conversion gain, noise figure, and 3-dB bandwidth of are approximately −23.7 dB, 33 dB 18.4 GHz, respectively. Packaging loss estimated to be 4 from gain chip −19.5 dB. wireless data rate 20 Gbit/s 16-QAM was achieved using designed modules.

A CMOS decoupling power line intended for use in millimeter-wave circuits is fabricated and characterized up to 325 GHz. It designed have a low dc resistance an extremely high-frequency characteristic impedance. The input impedance of 0.3-mm-long shown stay roughly below 1 Ω 20 GHz-170GHz 2 220 GHz-325 GHz, irrespective whether the far end open- or short-ended, which clearly demonstrates its wideband capability.

CMOS millimeter-wave transceivers have realized over 10Gbps communication for proximity within 10cm distance. To increase the distance indoor applications, output power of transmitters should be increased. However, it has been difficult to simultaneously realize high efficiency together with low consumption and wideband required in amplifiers used transmitters. applications technology, co-design a modulator impedance variation amplifier is proposed by adopting amplitude-shift keying. The...

A 300-GHz CMOS transmitter that covers the vast unallocated frequency band above 275 GHz with six channels has recently been reported. It employed a tripler-based subharmonic mixer called cubic mixer. However, maximum perchannel data rate was limited to 17.5 Gb/s 32 QAM because of interference between desired signal and unwanted image signals at approximately 300 GHz, originating from an second intermediate signal, IF2, around 100 GHz. In this study, we show can be reduced significantly by...

In this paper, we describe a low-power millimeter-wave amplitude-shift-keying transmitter architecture and its design technique. This adopts push-push-type oscillator. The load-pull-like technique for the oscillator enables us to extract large output power with same dissipation remove amplifier from transmitter. is fabricated using 40nm CMOS technology. core area 0.11mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . measured carrier...

This paper proposes an improved cold-bias de-embedding technique that properly separates the bias-independent parasitics from bias-dependent core MOSFET characteristics. is accomplished by considering possible discrepancy between dc and high-frequency I-V It makes model very simple. A 32-μm-wide common-source fabricated in a 65 nm LP CMOS process successfully modeled up to 330 GHz.

This paper presents a compact wideband amplifier at 160 GHz in 40-nm CMOS. Typical design requires higher-order matching networks and more gain stages, both of which demand larger die area. The presented 8-stage uses "fishbone" layout technique, its core size is as small 190 × 123 µm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . A small-signal 15 dB 3-dB bandwidth 41 are achieved. It consumes 117 mW from 0.9 V voltage supply.

A wideband decoupling power line for millimeter-wave circuits can be realized with a transmission having an extremely low characteristic impedance, Z <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf> → 0Ω. It is, however, very difficult to characterize such the ordinary two-port S-parameter measurement. This paper presents alternative measurement technique that uses stubs. The results confirm impedance below 1Ω is successfully achieved...

This paper reports on a 300-GHz CMOS receiver with an LNA-less architecture that operates above NMOS unity-power-gain frequency, f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> . Both low power consumption and high conversion gain are achieved using high-performance tripler-last multiplier combined downconversion mixer. Its 3-dB bandwidth −18 dB 33 GHz, respectively. The achieves wireless data rate of 32 Gb/s 16QAM.