A5100399754- CCD and CMOS Imaging Sensors
- Image Processing Techniques and Applications
- Infrared Target Detection Methodologies
- Advanced Optical Sensing Technologies
- Advanced Memory and Neural Computing
- Radiation Detection and Scintillator Technologies
- Ferroelectric and Negative Capacitance Devices
- Analytical Chemistry and Sensors
- Digital Holography and Microscopy
- Optical Coherence Tomography Applications
- Transition Metal Oxide Nanomaterials
- Advanced Battery Technologies Research
- Perovskite Materials and Applications
- Extraction and Separation Processes
- Translation Studies and Practices
- Particle Detector Development and Performance
- Optical measurement and interference techniques
- Advancements in Battery Materials
- Thin-Film Transistor Technologies
- Social Media and Politics
- Atomic and Subatomic Physics Research
- Discourse Analysis in Language Studies
- Particle Accelerators and Free-Electron Lasers
- Calibration and Measurement Techniques
- Gyrotron and Vacuum Electronics Research
Sejong University
2021-2023
Kyungpook National University
2017-2023
RWTH Aachen University
2023
Korea University of Technology and Education
2023
In order to examine the effect of excessive sulfate in leachate spent Li-ion batteries (LIBs), LiNi1/3Co1/3Mn1/3O2 (pristine NCM) and sulfate-containing (NCMS) are prepared by a co-precipitation method. The crystal structures, morphology, surface species, electrochemical performances both cathode active materials studied scanning electron microscopy (SEM), X-ray diffraction (XRD), photoelectron spectroscopy (XPS), charge-discharge tests. XRD patterns XPS results identify presence groups on...
This paper presents a CMOS image sensor with the in-pixel aperture technique for single-chip 2-D and 3-D imaging. In conventional sensors, is located at camera lens. However, in proposed sensor, integrated on chip formed metal layer of (CIS) process. A pixel array composed W, R, B PA pixels (W aperture) extracting color depth information. While W becomes blurred increasing distance from focused object, maintains sharpness. Therefore, can be obtained using defocus method. The size pixel,...
In this paper, complementary metal oxide semiconductor (CMOS) image sensors that can extract depth information using the pixel aperture technique is presented. The array of proposed sensor composed blue, red, and white pixels, as well apertures. apertures are formed by pattern in pixels. focused defocused images obtained, simultaneously, sensor, used for calculating information. was designed fabricated 0.11-μm CMOS process, its performance evaluated.
This paper presents the effects of offset pixel aperture width on performance monochrome (MONO) CMOS image sensors (CISs) for a three-dimensional sensor. Using technique to integrate (OPA) inside each pixel, depth information can be acquired using disparity from OPA patterns. The is classified into two pattern types: Left-offset (LOPA) and right-offset (ROPA). These OPAs are divided odd even rows integrated in array. To analyze correlation between sensor characteristics, experiments were...
In this paper, we propose a complementary metal-oxide semiconductor (CMOS) binary image sensor with gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector using double-tail comparator for highspeed and low-power operations. The GBT is based on PMOSFET tied floating gate (n+ polysilicon) body that amplifies the photocurrent generated by incident light. A compares an input signal reference voltage returns output as either 0 or 1....
In this paper, we propose an averaging pixel current adjustment technique for reducing fixed pattern noise (FPN) in the bolometer-type uncooled infrared image sensor. The is composed of active pixel, reference and calibration circuit. Polysilicon resistors were used each pixel. Resistance deviation among pixels integrated with same resistance value cause FPN. principle removing FPN based on subtraction dark from subtracted converted into voltage, which contains information. circuit to adjust...
In this paper, we propose a CMOS image sensor that uses gate/body-tied p-chnnel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector for highspeed binary operation.The sensitivity of the PMOSFET-type is approximately six times p-n junction same area.Thus, an active pixel with highly sensitive more appropriate high-speed operation.Moreover, operation has advantages low power consumption and simple circuit because analogto-digital converter not necessary.The proposed...
The 3-dimensional (3D) imaging is an important area which can be applied to face detection, gesture recognition, and 3D reconstruction. Many techniques have been reported for using various methods such as time of fight (TOF), stereo vision, structured light. These limitations use light source, multi-camera, or complex camera system. In this paper, we propose the offset pixel aperture (OPA) technique implemented on a single chip so that depth obtained without increasing hardware cost adding...
In this paper, we propose a pixel current calibration technique for reducing the fixed pattern noise due to deviations in bolometer resistance. Usually, it is difficult calibrate of array. The principle that dark reference subtracted from each active pixel. To reduce difference resistance variation, suitable required. Through technique, resistor, and subsequently, noise, can be reduced significantly. A readout circuit using proposed simulated fabricated 0.35 μm standard CMOS process.
Various circuits and devices are integrated on the CMOS image sensor (CIS) chip. Sources of power consumption in CIS include source followers pixel array, bias circuits, driving a noise canceller, readout circuits. In this paper, low-power complementary metal oxide semiconductor (CMOS) based variable frame rate operation is proposed. Power array reduced by proposed CIS. most cases, constant current continuously flows through even if changed. However, results indicate that using reduces...
The continuous advancement of Artificial Intelligence (AI) technology depends on the efficient processing unstructured data, encompassing text, speech, and video. Traditional serial computing systems based von Neumann architecture, employed in information communication development for decades, not suitable concurrent massive data tasks with relatively low-level operations. As a result, there arises pressing need to develop novel parallel systems. Recently, has been burgeoning interest among...
The continuous advancement of Artificial Intelligence (AI) technology depends on the efficient processing unstructured data, encompassing text, speech, and video. Traditional serial computing systems based von Neumann architecture, employed in information communication development for decades, are not suitable concurrent massive data tasks with relatively low-level operations. As a result, there arises pressing need to develop novel parallel systems. Recently, has been burgeoning interest...
We present forming-free volatile resistive switching (RS) in lateral <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{Ag}-\mathbf{MoS}_{2}-\mathbf{Pd}$</tex> structures with micron-sized electrode gaps. Our devices exhibit highly repeatable RS at voltages ~2 V, reasonably fast within xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 6\mu \mathrm{s}$</tex> 5 and maintain behavior comparatively higher current compliance...
Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on surfaces. This effect can be employed for resistive switching (RS) in devices emerging memories, selectors, neuromorphic computing. To date, all lateral molybdenum disulfide (MoS${_2}$)-based volatile RS with silver (Ag) been demonstrated using exfoliated, single-crystal MoS${_2}$ flakes requiring a forming step to enable RS. Here, we present multilayer grown...
CMOS image sensor (CIS) is used in various applications such as surveillance cameras, automobile mobile phones and digital single lens reflex (DSLR). The photodetectors the CIS are p-n junction photodiodes, pinned MOSFET-type photodetectors, bipolar transistor-type photodetectors. A active pixel (APS) with adjustable sensitivity presented which uses photodetector a built-in transfer gate. of APS using much higher than that pn photodiode, since composed floating-gate tied to an n-well...
We proposed a new type of hybrid photo-detector that consists photocathode, an electrode, scintillator, and silicon photomultiplier in vacuum tube. This with large area photocathode could be utilized array for neutrino detection. Photons incident onto the are converted to photo-electrons. Due electric field between photo-electrons accelerates toward scintillator produce scintillation lights. The lights, then, enters SiPM electrical signal. advantage this photon-detector is lights contributes...
A 3dimensional (3D) imaging is an important area which can be applied to face detection, gesture recognition, and 3D reconstruction. In this paper, extraction of depth information for using pixel aperture technique presented. An active sensor (APS) with in-pixel has been developed purpose. the conventional camera systems a complementary metal-oxide-semiconductor (CMOS) image sensor, located behind lens. However, in our proposed system, implemented by metal layer CMOS process on White (W)...
In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode field-effect transistor (MOSFET) and inverter is proposed. The characteristics of CMOS were analyzed through experimental results. proposed active pixel consists eight transistors operated under various light intensity conditions. MOSFET as constant current source. generated from varies intensity. has high illumination owing to logarithmic response...
A complementary metal oxide semiconductor (CMOS) binary image sensor is proposed for low-power and low-noise operation. The has the advantages of reduced power consumption fixed pattern noise (FPN). gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector used as CMOS sensor. GBT PMOSFET-type a floating gate that amplifies photocurrent generated by incident light. Therefore, sensitivity higher than other photodetectors. consists pixel...