B. J. Chen

ORCID: 0000-0003-0848-4890
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Research Areas
  • Magnetic properties of thin films
  • ZnO doping and properties
  • Numerical methods in engineering
  • Organic Light-Emitting Diodes Research
  • Organic Electronics and Photovoltaics
  • Magnetic and transport properties of perovskites and related materials
  • Physics of Superconductivity and Magnetism
  • Advanced Memory and Neural Computing
  • Ultrasonics and Acoustic Wave Propagation
  • Conducting polymers and applications
  • Magnetic Properties and Applications
  • Ga2O3 and related materials
  • Composite Material Mechanics
  • Ferroelectric and Negative Capacitance Devices
  • Gas Sensing Nanomaterials and Sensors
  • Multiferroics and related materials
  • Thin-Film Transistor Technologies
  • Random lasers and scattering media
  • Advanced Data Storage Technologies
  • Fatigue and fracture mechanics
  • Error Correcting Code Techniques
  • Luminescence and Fluorescent Materials
  • Mechanical Behavior of Composites
  • Quantum Dots Synthesis And Properties
  • Metamaterials and Metasurfaces Applications

Institute of High Performance Computing
2020-2025

Agency for Science, Technology and Research
2013-2024

Sun Yat-sen University
2020

Data Storage Institute
2011-2019

Institute of Materials Research and Engineering
2018-2019

China Petrochemical Development Corporation (Taiwan)
2015

Nanyang Technological University
2001-2010

The optical band gap of ZnO thin films deposited on fused quartz by metal-organic chemical-vapor deposition was studied. as-grown blueshifted from 3.13to4.06eV as the growth temperature decreased 500to200°C. After annealing, shifted back to single-crystal value. All studied show strong band-edge photoluminescence. X-ray diffraction measurements showed that samples at low temperatures (<450°C) consisted amorphous and crystalline phases. redshift original position after annealing...

10.1063/1.1940137 article EN Journal of Applied Physics 2005-06-29

Logs are one of the most valuable data sources for large-scale service management. Log representation, which converts unstructured texts to structured vectors or matrices, serves as first step towards automated log analysis. However, current representation methods neither represent domain-specific semantic information logs, nor handle out-of-vocabulary (OOV) words new types logs at runtime. We propose Log2Vec, a semantic-aware framework Log2Vec combines log-specific word embedding method...

10.1109/icccn49398.2020.9209707 article EN 2020-08-01

Leveraging on interfacial Dzyaloshinskii-Moriya interaction (DMI) induced intrinsic magnetization tilting in nanostructures, a parametric window enabling field-free spin-orbit torque (SOT) switching perpendicular ferromagnet is established. The critical current density (Jc) bounds for SOT are highly dependent the DMI, producing distorted diamond-shaped region bounded by Jc-DMI curves. widest Jc interval found DMI values between 0.5 mJ/m2 and 0.8 mJ/m2. Geometrical modulation, of...

10.1063/1.5052194 article EN Applied Physics Letters 2019-01-14

Prismatic zinc oxide microtubes have been fabricated by vapor transport. Room-temperature ultraviolet lasing action has demonstrated in these microtube arrays. The ZnO microtubes, mainly appearing tapped bell-mouthed shape, form natural laser cavities along the length direction. hexagon diagonal and of vary from 1 µm to 20 10 a few hundred respectively. Under 355 nm optical excitation, is observed at room-temperature around 393 nm. Multi-longitudinal modes are also with significantly...

10.1143/jjap.42.l1229 article EN Japanese Journal of Applied Physics 2003-10-08

Spin-orbit torque (SOT) control of magnetization is being rapidly positioned for energy-efficient computing across various memory hierarchies. Concurrently, the study intrinsic and extrinsic factors, such as doping, to enhance SOT considerable scientific interest. Here, we introduce 2% nominally doped oxygen via postdeposition flow in β-phase tungsten, one most promising materials, create laminated [W/O] structures. Incorporating them into annealed multilayer stacks compatible with...

10.1103/physrevapplied.23.014009 article EN Physical Review Applied 2025-01-06

Self-organized zinc oxide (ZnO) nanofiber network with six-fold symmetry was fabricated on ZnO-buffered (0001) sapphire substrate patterned gold catalyst by vapor-phase transport method. From the ZnO buffer layer, hexagonal nanorods identical in-plane structure grew epitaxially along [0001] orientation to form vertical stems. The branches horizontally from six side-surfaces of stem [011¯0] and other equivalent directions. aligned constructed a waveguide array optical gain. Ultraviolet...

10.1063/1.1847716 article EN Applied Physics Letters 2004-12-27

Postgrowth annealing was carried out on ZnO thin films grown by metal-organic chemical-vapor deposition. It found from the scanning electron microscopy and atomic force measurements that morphology of changed drastically after annealing. The as-grown consist fine nanoscale-sized sheets with random orientation. Upon at 800°C, nanosheets to three-dimensional nanoneedles. different types mass transport mechanisms are discussed correlated experimental results. A coarsening kinetics developed...

10.1063/1.2218468 article EN Journal of Applied Physics 2006-08-01

Stochastic Magnetic Tunnel Junctions (SMTJs) emerge as a promising candidate for neuromorphic computing. The inherent stochasticity of SMTJs makes them ideal implementing stochastic synapses or neurons in However, the may impair performance systems. In this study, we conduct systematic examination influence three effects (shift, change slope, and broadening) on sigmoid activation function. We further explore implications these reconstruction Restricted Boltzmann Machines (RBMs). find that...

10.1063/5.0171238 article EN Applied Physics Letters 2024-01-15

10.1023/a:1011066521439 article EN International Journal of Fracture 2001-01-01

A hole-blocking layer (HBL), 2,9-dimethyl-4, 7-diphenylphenanthroline (BCP), was incorporated between the hole-transporting (HTL) and hole-injection for a tris-(8-hydroxyqunoline) aluminum-based organic light-emitting device. Such structure helps to reduce hole-leakage cathode resulting in improved current efficiency. Optimum BCP thickness of around 3nm observed produce efficiency 3.25cd∕A, which corresponds 30% improvement compared that standard device without (2.5cd∕A). Low operating...

10.1063/1.2178581 article EN Applied Physics Letters 2006-02-20

In this paper, we present a write failure analysis for bit-patterned media recording (BPMR) with formulas derived to calculate its probability given set of system parameters. The model in work includes the effect head and characteristics that hard disk spindle motor speed variations. Such can help assess performance writing strategy BPMR. It is also found since local parameters associated each bit directly affect both rate read-back signal, signal actually contains information regarding...

10.1109/tmag.2010.2040713 article EN IEEE Transactions on Magnetics 2010-05-28

In this paper, we first present a recording physics based analytical channel model for bit-patterned media (BPMR) systems with staggered islands configuration. We further propose an approach to jointly design the equalizer partial response (PR) target BPMR systems, by using minimum mean-squared error (MMSE) criterion monic constraint, taking into account inter-track interference (ITI) and noise. Simulation results show that proposed performs better than system designed without considering...

10.1109/tmag.2011.2181183 article EN IEEE Transactions on Magnetics 2011-12-23

Spin-torque transfer magnetic random access memory (STT-MRAM) has emerged as a promising non-volatile (NVM) technology, featuring compelling advantages in scalability, speed, endurance, and power consumption. In this paper, we focus on large-capacity stand-alone STT-MRAM, investigate the channel capacity viability of applying low-density parity-check (LDPC) codes with soft-decision decoding to correct cell errors improve storage density STT-MRAM. We propose use LDPC short codeword lengths,...

10.12720/jcm.8.4.225-232 article EN Journal of Communications 2013-01-01

The device characteristics of organic light-emitting devices based on tris-(8-hydroxyqunoline) aluminum with LiF/Mg:Ag/Ag cathodes were investigated. Mg:Ag/Ag, LiF/Al and Al-only also fabricated in the same run for comparison. Similar to cathodes, cathode greatly improved performance over Mg:Ag/Ag cathode. A LiF layer 0.5 nm significantly enhanced electron injection resulted lower turn-on voltage increased efficiency. as buffered is low 2.8 V. At current density 20 mA/cm2, efficiency power...

10.1364/opex.13.000026 article EN cc-by Optics Express 2005-01-01

A comparative study of in situ postgrowth annealing organic layers before metal cathode was conducted on tris-(8-hydroxyqunoline) aluminum (Alq3)-based light-emitting devices (OLEDs). The were fabricated the same run with a standard device without for comparison, an identical structure indium tin oxide (ITO)/copper phthalocyanine (CuPc) (10nm)∕N,N′-di(naphthalene-l-yl)-N,N′-diphenyl-benzidine (NPB) (90nm)∕Alq3(90nm)∕Mg:Ag(200nm)∕Ag(20nm). temperature used 60, 80, and 100°C, respectively. It...

10.1063/1.2009831 article EN Applied Physics Letters 2005-08-02

A series of tris-(8-hydroxyquinoline) metal chelates with central ions Al3+, Ga3+, and In3+ was synthesized, characterized, used in organic electroluminescent devices. The ionization potential optical band gap the three were measured by ultraviolet photoelectron spectroscopy ultraviolet-visible spectrum, respectively. Two types devices, configurations indium tin oxide (ITO)/N,N′-diphenyl-N,N′-(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD) (80 nm)/Mq3 nm)/Mg:Ag (200 nm) ITO/TPD (60...

10.1063/1.1572474 article EN Applied Physics Letters 2003-05-01

A zinc oxide (ZnO) whisker network array with sixfold symmetry was fabricated on ZnO-buffered (0001) sapphire substrate by the vapour-phase transport method using a mixture of and graphite powders as source materials patterned gold catalyst. From ZnO buffer layer, hexagonal nanorods identical in-plane structure grew epitaxially along [0001] orientation to form vertical stems. The branches horizontally from six side-surfaces stem other equivalent directions. Most whiskers were confined...

10.1088/0957-4484/16/1/015 article EN Nanotechnology 2004-12-03

A blue organic light-emitting device with improved efficiency and excellent color purity is reported (Commission Internationale de’l Eclairage coordinates of x=0.1659 y=0.0772 at 5V), where N, N′-di(naphth-2-yl)-N, N′-diphenyl-benzidine (NPB), a traditional hole-transporting layer, was used as the emission layer. significant increase in achieved by confining excitons within NPB layer two wide-band-gap hole-blocking layers sandwiching This structure also increases direct exciton formation...

10.1063/1.2364161 article EN Applied Physics Letters 2006-10-23

Double MgO based magnetic free layers are state-of-the-art solutions for providing high performance perpendicular spin-transfer torque-magnetic random access memory devices. We provide device measurements showing reduction of switching current in tunnel junctions (p-MTJs) using non-collinear ferromagnets on the double template. This structure is engineered by introducing an in-plane ferromagnetic cap, which produces stray field effects layer. The delivers ∼53% critical density STT without...

10.1063/1.5038060 article EN Applied Physics Letters 2018-07-09

Current-induced spin–orbit torque (SOT) facilitates the ultrafast electrical manipulation of magnetic tunnel junction (MTJ), which is a leading non-volatile technology for microelectronic industry. The key bottleneck to commercial application SOT-MTJ absence practicable symmetry-breaking scheme switch perpendicular magnetization without an external field. Here, we demonstrate wafer-scale realization internalized field-free switching in using conventional materials and device structure. We...

10.1063/5.0221776 article EN cc-by APL Materials 2024-08-01

Poly(p-phenylene vinylene)-based polymer light-emitting devices using different thicknesses of tetrahedral amorphous carbon ultrathin films between indium tin oxide and polyethylenedioxythiophene hole transporting layer have been fabricated. The device with a 0.5nm (ta-C) has the highest luminance current efficiency compared to that other devices. standard without ta-C is 1.1cd∕A at 5V, however, thickness 2.7cd∕A; improved about 2.5 times device. improvement due blocking injection from anode...

10.1063/1.1796527 article EN Applied Physics Letters 2005-02-01
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