A5100693814- Semiconductor Quantum Structures and Devices
- GaN-based semiconductor devices and materials
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and devices
- Quantum Dots Synthesis And Properties
- Quantum and electron transport phenomena
- Nanowire Synthesis and Applications
- Chalcogenide Semiconductor Thin Films
- ZnO doping and properties
- Perovskite Materials and Applications
- Spectroscopy and Laser Applications
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- 2D Materials and Applications
- Advanced Fiber Optic Sensors
- Plasmonic and Surface Plasmon Research
- Photonic Crystals and Applications
- Silicon Nanostructures and Photoluminescence
- Conducting polymers and applications
- Mechanical and Optical Resonators
- Ga2O3 and related materials
- Gold and Silver Nanoparticles Synthesis and Applications
- Advanced Photonic Communication Systems
South China University of Technology
2024-2025
Xi'an Shiyou University
2024-2025
Nanyang Technological University
2015-2024
Hebei University
2024
Sanya University
2024
Zhejiang Ocean University
2024
Zhejiang University
2024
National University of Singapore
1996-2024
Shanghai Polytechnic University
2024
Sanda University
2024
The optical band gap of ZnO thin films deposited on fused quartz by metal-organic chemical-vapor deposition was studied. as-grown blueshifted from 3.13to4.06eV as the growth temperature decreased 500to200°C. After annealing, shifted back to single-crystal value. All studied show strong band-edge photoluminescence. X-ray diffraction measurements showed that samples at low temperatures (<450°C) consisted amorphous and crystalline phases. redshift original position after annealing...
This work investigates the electronic band structures of bulk Ge1-xSnx alloys using empirical pseudopotential method (EPM) for Sn composition x varying from 0 to 0.2. The adjustable form factors EPM were tuned in order reproduce features that agree well with reported experimental data. Based on adjusted factors, calculated along high symmetry lines Brillouin zone. effective masses at edges extracted by a parabolic line fit. bowing parameters hole and electron then derived fitting mass...
Skin-attachable electronics have garnered considerable research attention in health monitoring and artificial intelligence domains, whereas susceptibility to electromagnetic interference (EMI), heat accumulation issues, ultraviolet (UV)-induced aging problems pose significant constraints on their potential applications. Here, an ultra-elastic, highly breathable, thermal-comfortable epidermal sensor with exceptional UV-EMI shielding performance remarkable thermal conductivity is developed for...
Postgrowth rapid thermal annealing was used to modify the structural and optical properties of self-assembled InAs quantum dots grown on GaAs substrates by molecular beam epitaxy. It is found that significant narrowing luminescence linewidth (from 78.9 20.5 meV) from dot layer occurs together with about 260 meV blueshift at temperatures up 850 °C. Observation high-resolution transmission electron microscopy shows existence under lower but disappearance annealed The excited-state-filling...
Abstract Expanded azahelicenes, as heteroanalogues of helically chiral helicenes, hold significant potential for chiroptical materials. Nevertheless, their investigation and research have remained largely unexplored. Herein, we present the facile synthesis a series expanded azahelicenes NHn ( n =1–5) consisting 11, 19, 27, 35, 43 fused rings, mainly by Suzuki coupling followed Bi(OTf) 3 ‐mediated cyclization vinyl ethers. The structures NH2 , NH3 NH4 were confirmed through X‐ray...
A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs dots has been demonstrated. Responsivity 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet 60 K. The QDIPs exhibit some unique electro-optic characteristics such as strong negative differential photoconductance effect and blueshift response peak wavelength.
The electronic properties of wide-energy gap zinc-blende structure GaN, AlN, and their alloys Ga1−xAlxN are investigated using the empirical pseudopotential method. Electron hole effective mass parameters, hydrostatic shear deformation potential constants valence band at Γ those conduction X obtained for GaN respectively. energies Γ, X, L valleys alloy versus Al fraction x also calculated. information will be useful design lattice mismatched heterostructure optoelectronic devices based on...
The electronic structures of superlattices under an in-plane magnetic field are studied by the method expansion with sine functions. and hole energy levels obtained as functions ${k}_{x}$,${k}_{y}$ intensity field. density states magnetic-optical transition matrix elements discussed. variations binding heavy- light-hole excitons well width also obtained. Finally, in along arbitrary direction yz plane calculated.
Abstract Surface effects in atomically flat colloidal CdSe nanoplatelets (NLPs) are significantly and increasingly important with their thickness being reduced to subnanometer level, generating strong surface related deep trap photoluminescence emission alongside the bandedge emission. Herein, synthesis of highly luminescent two‐monolayer (2ML) NPLs a systematic investigation carrier dynamics these exhibiting broad covering visible region quantum yields reaching 90% solution 85% polymer...
Abstract 2D van der Waals (vdWs) heterostructure‐based multifunctional field effect transistor (FET) has brought about novel physical phenomena. Impressively, anti‐ambipolar characteristic is one of the basis logic functions being used in multi‐valued inverters, which analogous to negative differential resistance (NDR)‐based transistor. Here, tunable current‐transport and self‐driven optoelectrical properties vertically stacked multilayer GeSe/SnS 2 heterostructure are reported. In...
A strained-modified, single-band, constant-potential three-dimensional model is formulated to study the dependence of electronic states $\mathrm{InAs}∕\mathrm{GaAs}$ quantum dots (QDs) on shape and size variation. The QD shapes considered are (i) cuboid, (ii) cylindrical, (iii) pyramidal, (iv) conical, (v) lens shaped. Size variations include volume base length, height, taking into account aspect ratio Isovolume with narrow tips were found have higher ground-state energies than those broad...
Photonic chip integration would greatly benefit quantum key distribution (QKD) systems for secure communication, in terms of compactness, scalability, and well-established fabrication techniques. This study demonstrates proof concept an all-chip measurement-device-independent QKD system using integrated silicon photonic technology. The prototype generates a rate per pulse $2.923\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}6}$ over distance corresponding to 50 km standard fiber with...
The MoTe 2 /InSe heterojunctions exhibit an anti-ambipolar behavior with high peak-to-valley current ratio (>10 3 ) and a self-driven photodetection performance photoresponsivity of 15.4 mA W −1 specific detectivity up to ∼3.02 × 10 14 Jones.
We report a novel Au-assist exfoliation and non-destructive transfer method to fabricate the large-scale Bi 2 Se 3 thin nanosheet. Furthermore, broken-gap tunneling phototransistor is designed by combing 2H-MoTe .
The polyimide support can decrease thermodynamic barriers and enrich local H 3 O + concentration for the supported Ir catalysts, enhancing OER kinetics.
Research is focused on finding reliable high-dielectric constant (k) oxides with high capacitance and all critical properties required for the next generation of complementary metal–oxide–semiconductor (CMOS) gates. A trade-off between dielectric band-offset height generally observed gate oxides. Combining TiO2 Al2O3, two extremes permittivity band offset, we produced a TixAl1−xOy (TAO) oxide layer k=∼30 low leakage high-k We developed temperature oxidation process, following room...
The band structures of wurtzite ZnO are calculated by the empirical pseudopotential method (EPM). eight parameters Zn and O atomic form factors obtained with formula Schluter et al.[Phys. Rev. B 12, 4200 (1975)]. extracted using a k∙p Hamiltonian to fit EPM results. band-edge energies (Eg, EA, EB, EC) at Γ point in good agreement experimental Based on obtained, valence subbands ZnO∕MgxZn1−xO tensile-strained quantum wells different well widths Mg compositions six-band method.
We extend the previous 30-band $k$$\cdot$$p$ model effectively employed for relaxed Ge$_{1-x}$Sn$_{x}$ alloy to case of strained alloy. The strain-relevant parameters are obtained by using linear interpolation between values single crystal Ge and Sn that from literatures optimizations. specially investigate dependence band-gap at $L$-valley $\Gamma$-valley with different composition under uniaxial biaxial strain along [100], [110] [111] directions. good agreement our theoretical predictions...
We demonstrate Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width (WNW) on a GeSn-on-insulator (GeSnOI) substrate using top-down fabrication process. Thanks to the excellent gate control by employing an aggressively scaled structure, p-GAAFETs exhibit small subthreshold swing (SS) of 66 mV/decade, decent on-current/off-current (ION/IOFF) ratio ∼1.2 × 106, and high-field effective hole mobility (μeff) ∼115 cm2/(V s). In addition, we also...
A paradigm for quantum synchronization is the analog of Stuart-Landau oscillator, which corresponds to a van der Pol oscillator in limit weak (i.e., vanishingly small) nonlinearity. Due this limitation, fails capture interesting nonlinearity-induced phenomena such as relaxation oscillations. To overcome deficiency, we propose an alternative model that approximates Duffing--van finitely large nonlinearities while remaining numerically tractable. This allows us uncover deep-quantum strongly...
We have investigated the electronic band structure and optical transparency conditions of ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{As}}_{1\ensuremath{-}y}{\mathrm{N}}_{y}∕\mathrm{Ga}\mathrm{As}$ quantum well (QW) using 10-band, 8-band 6-band $\mathbf{k}∙\mathbf{p}$ models. The transition energy calculated by model agrees very with values 10-band model, especially in range high indium composition (35%). Electron effective mass $({m}_{e}^{*})$ predicated anticrossing...