In recent years, facial expression recognition (FER) has garnered significant attention within the realm of computer vision research. This paper presents an innovative network called Dual-Direction Attention Mixed Feature Network (DDAMFN) specifically designed for FER, boasting both robustness and lightweight characteristics. The architecture comprises two primary components: (MFN) serving as backbone, (DDAN) functioning head. To enhance network’s capability in MFN, resilient features are...

We extend the previous 30-band $k$$\cdot$$p$ model effectively employed for relaxed Ge$_{1-x}$Sn$_{x}$ alloy to case of strained alloy. The strain-relevant parameters are obtained by using linear interpolation between values single crystal Ge and Sn that from literatures optimizations. specially investigate dependence band-gap at $L$-valley $\Gamma$-valley with different composition under uniaxial biaxial strain along [100], [110] [111] directions. good agreement our theoretical predictions...

We demonstrate Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width (WNW) on a GeSn-on-insulator (GeSnOI) substrate using top-down fabrication process. Thanks to the excellent gate control by employing an aggressively scaled structure, p-GAAFETs exhibit small subthreshold swing (SS) of 66 mV/decade, decent on-current/off-current (ION/IOFF) ratio ∼1.2 × 106, and high-field effective hole mobility (μeff) ∼115 cm2/(V s). In addition, we also...

The effect of lateral size and vertical thickness CdSe CdS nanoplatelets (NPLs) on their electronic structure optical properties are investigated using an effective-mass envelope function theory based the 8-band k ⋅ p model with valence force field considerations. Volumetrically larger NPLs have lower photon emission energy due to limited quantum confinement, but a greater transition matrix element (TME) electron-hole wavefunction overlap. gain characteristics depend several factors such as...

The advancement of the optoelectronic fusion industry has escalated demands for simulation, yet a comprehensive model library remains unavailable chip designers. We have utilized hardware description language Verilog-A to develop an extensive device library, featuring full range types, unified interfaces, and capability simulate physical effects devices. Establishing this is intended alleviate workload designers reduce development costs.

In recent years, facial recognition technology has been widely adopted in modern society. However, the plaintext storage, computation, and transmission of data have posed significant risks information leakage. To address this issue, paper proposes a framework based on approximate homomorphic encryption (HE_FaceNet), aimed at effectively mitigating privacy leaks during process. The first utilizes pre-trained model to extract feature templates, which are then encrypted. encrypted templates...

This study explores the integration of machine learning techniques in measuring market, credit, and operational value-at-risk (VaR) conditional (VaR). By integrating traditional tools such as historical simulation method Monte Carlo with intelligent algorithms support vector random survival forest, it breaks limitations methods dealing high-dimensional heterogeneous data. The entire experimental system, including data cleaning, algorithm adaptation, parameter optimization, was constructed....

By combining behavioral finance theory and big data analysis technology, this study explores the mechanism of impact investor sentiment on cryptocurrency market price anomalies. Based fusion database traditional exchange historical social media data, research team constructed multidimensional indicators to quantify emotional fluctuations participants. The design adopts strict cleaning process, feature engineering processing, hybrid modeling method statistical model machine learning...

Colloidal Cadmium Selenide (CdSe) nanoplatelets (NPLs) are a recently developed class of efficient luminescent nanomaterial suitable for optoelectronic device applications. A change in temperature greatly affects their electronic bandstructure and luminescence properties. It is important to understand how-and-why the characteristics NPLs influenced, particularly at elevated temperature, where both reversible irreversible quenching processes come into picture. Here we present study on effect...

Enhancing valley splitting in SiGe heterostructures is crucial for developing silicon spin qubits. Complex heterostructures, sharing a common feature of four-monolayer (4 ML) Ge layer next immediately to the quantum well (QW), have been computationally designed 2013 giant approaching 9 meV and hence could be used overcome challenge towards experimental realization Si computing. However, none them has successfully fabricated, perhaps due their complexity. Here, we remarkably simplify...

Abstract The conventional betavoltaic battery design fails to eliminate the inherent influence of radioactive source self-absorption effect, leading a bottleneck in efficiency and power batteries. In this paper, feasible high-efficiency 63 NiO/ZnO integrated is designed compared with battery. Simulation results show that proposed has better output performance breaks upper limit power. work presented here provides valuable insights for radioisotope designs, physical modeling procedure...

The electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots (QDs) are investigated using the 16-band k ⋅ p model with constant strain. is calculated taking both homogeneous inhomogeneous broadenings into consideration. effective gap falls as we increase composition nitrogen (N) bismuth (Bi) an appropriate choice can tune emission wavelength to span within 1.3 μm–1.55 μm, for device application in fiber technology. extent this red shift more profound QDs...

This paper presents a solid-state volumetric 3-D display system utilizing 20 LC light shutters as module, which provides viewers with true depth cues. The electro-optic properties of based on normal-mode PSCT were investigated. device shows field-on transmittance 86.2%. When applied an operation voltage 100 V at 28 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C, the response time is 540 μs for switching-on and 180 switching-off,...

Duplex stainless steel (DSS) exhibits good mechanical properties and corrosion resistance, has attracted more attention within the fields of both science technology. However, increasing levels N Cr, Mo, etc., as alloying elements in DSS increase production difficulty. In particular, element increases risk Cr2N precipitation, which can seriously deteriorate thermal plasticity DSS, while its strength. For this reason, a low-N-content 25Cr-type was designed order to adapt additive manufacturing...

Quantum spin Hall (QSH) effect, a fundamentally new quantum state of matter and topological phase transitions are characteristics kind electronic material, popularly referred to as insulators (TIs). TIs similar ordinary insulator in terms their bulk bandgap, but have gapless conducting edge-states that topologically protected. These facilitated by the time-reversal symmetry they robust against nonmagnetic impurity scattering. Recently, quest for materials exhibiting non-trivial has been...

Tunneling-based static random-access memory (SRAM) devices has been developed to fulfill the demands of high density and low power, promoting performance SRAMs. However, it for a long time that no silicon-based tunneling device with both peak-to-valley current ratio (PVCR) practicality is available, remaining gap be filled. Based on existing work, this manuscript provides concept new device, silicon cross-coupled gated diode (Si XTD), quite simple structure, which almost completely...

We have theoretically and experimentally demonstrated the feasibility of achieving ultra-low dark current in CpBnn type detectors based on a double-barrier InAs/GaSb/AlSb type-II superlattice. By employing structure that separates absorption region depletion region, diffusion, recombination, tunneling, surface currents photodetector (PD) been suppressed. Experimental validation has shown detector with diameter 500 µm at bias voltage −0.5 V exhibits density 2.5 × 10−6 A/cm2 operating...

We extend the previous 30-band k <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">.</sup> p model effectively employed for relaxed Ge <sub xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Sn xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> alloy to case of strained alloy. The strain-relevant parameters are obtained by using linear interpolation between values single crystal and that from literatures optimizations. specially investigate...

Abstract We calculate the electronic structures of Germanium nanowires by taking effective-mass theory. The electron and hole states at Γ-valley are studied via eight-band k.p For [111] L -valley, we expand envelope wave function using Bessel functions to energies for first time. results show that energy dispersion curves -valley almost parabolic irrespective diameters nanowires. Based on structures, density also obtained, find conduction band mostly come from because eight equivalent...

The SRAM bitcell array has been traditionally used as a yield learning vehicle for new technologies. However, the of is susceptible to parametric variations and subtle process defects/ variations. In this work functional called Tristated Inverter Array (TIA) discussed which much less both variation defects while retaining all useful features (fail mappability, ease isolation fails, regular design). This structure can be very effectively in complimentary test hard defects.

The demand for improvement of device speed and reduction power consumption has driven semiconductor devices to be miniaturized continuously. To develop new process generations, static random access memory (SRAM) is often chosen as the qualification vehicle because quality performance SRAMs are direct reflections high density small feature size, they very sensitive variation. Therefore, analysis SRAM failure a critical time-to market path development. During sub-quarter micron development,...