A5023800736- GaN-based semiconductor devices and materials
- Luminescence Properties of Advanced Materials
- Ga2O3 and related materials
- Boron and Carbon Nanomaterials Research
- Acoustic Wave Resonator Technologies
- ZnO doping and properties
- Semiconductor materials and devices
- Diamond and Carbon-based Materials Research
- Radiation Detection and Scintillator Technologies
- Solid-state spectroscopy and crystallography
- Graphene research and applications
- Electronic and Structural Properties of Oxides
- Perovskite Materials and Applications
- Advanced ceramic materials synthesis
- Gas Sensing Nanomaterials and Sensors
- Silicon Nanostructures and Photoluminescence
- Copper-based nanomaterials and applications
- Semiconductor Quantum Structures and Devices
- Photorefractive and Nonlinear Optics
- Metal and Thin Film Mechanics
- MXene and MAX Phase Materials
- Thermal properties of materials
- Glass properties and applications
- Nuclear materials and radiation effects
- 2D Materials and Applications
University of Latvia
2014-2024
Riga Technical College
2023
Riga Technical University
2001-2007
In-Q-Tel
2002
Latvian Academy of Sciences
1991-1993
The luminescent properties of epitaxial Cu2O thin films were studied in 10-300 K temperature range and compared with the single crystals. deposited epitaxially via electrodeposition method on either Cu or Ag substrates at different processing parameters, which determined orientation relationships. (100) (111) crystal samples cut from a rod grown using floating zone method. Luminescence spectra contain same emission bands as crystals around 720, 810 910 nm, characterizing VO2+, VO+ VCu...
The optical properties of aluminum nitride nanotips (AlNNTs) synthesized via vapor transport and condensation process have been studied by cathodoluminescence, photoluminescence (PL), thermoluminescence (TL), UV absorption measurements. Two defect related transitions around 2.1 3.4eV an excitonic feature at 6.2eV were identified. Compared to the AlN macropowders, AlNNTs showed a blueshift (+0.2eV) ∼3.2eV peak. Analysis both PL TL excitation measurements indicated existence subband gap...
The structure of oxygen-related luminescence centres in nominally undoped and Y2O3 doped AlN ceramics was investigated by electron paramagnetic resonance (EPR), nuclear double (ENDOR) optically-detected EPR. photoluminescence-detected EPR lines having g-values 1.990 2.008 were assigned to a recombination between neighbouring donor acceptor pairs. two at g = 1.987 2.003 detected via the afterglow are thought be due same, but distant previously speculated an trapped on oxygen impurity which...
Spectral characteristics of native oxygen-related defects existing in the crystalline lattice AlN were studied. Features photoluminescence observed under exposure to ultraviolet light together with those photostimulated luminescence testify recombination character luminescence. The mechanism is proposed. Keywords: PhotoluminescencePhotostimulated LuminescenceAluminum Nitride
Photoluminescence (PL) and afterglow luminescence (AGL) produced by UV laser irradiation with varied intensity were studied in AlN ceramics the 10–300 K temperature range. Luminescence spectra of contain UV–blue band built up two components – (3.18 eV) Blue (2.58 bands, which are presumably ascribed to recombination involving oxygen‐related centers bulk on surface AlN, correspondingly. It was found that position emission maximum depends such factors as excitation density, temperature, delay...
Abstract We report photoluminescence (PL) and PL‐excitation spectroscopy of BN nanotubes (nt‐BN) mixed with some residual hexagonal crystalline (h‐BN) starting material, pure h‐BN microcrystalline powder. The nanotube phase exhibits a broad‐band PL near 380 nm, in agreement published cathodoluminescence from sample comprising >90% nanotubes. This emission is almost 3 eV lower energy than unrelaxed exciton states found recent all‐electron theories nt‐BN about 1.4 the lowest (perturbed...
Spectral characteristics including photoluminescence (PL) spectra and its excitation for different AlN materials (AlN ceramics, macro size powder nanostructured forms such as nanopowder, nanorods nanotips) were investigated at room temperature. Besides the well known UV-blue (around 400 nm) red (600 luminescence, 480 nm band was also observed an asymmetric long-wavelength shoulder of PL band. This can be related to luminescence some kind surface defects, probably oxygen-related defects. The...
Journal Article Studies of Aluminium Nitride Ceramics for Application in UV Dosimetry Get access L. Trinkler, Trinkler Search other works by this author on: Oxford Academic PubMed Google Scholar Botter-Jensen, Botter-Jensen P. Christensen, Christensen B. Berzina Radiation Protection Dosimetry, Volume 92, Issue 4, 1 December 2000, Pages 299–306, https://doi.org/10.1093/oxfordjournals.rpd.a033296 Published: 01 2000