Saulius Tumėnas

ORCID: 0000-0003-1350-5967
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About
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Research Areas
  • Quasicrystal Structures and Properties
  • Plasmonic and Surface Plasmon Research
  • ZnO doping and properties
  • Mineralogy and Gemology Studies
  • Semiconductor Quantum Structures and Devices
  • Chalcogenide Semiconductor Thin Films
  • Advanced Semiconductor Detectors and Materials
  • Crystal Structures and Properties
  • Gold and Silver Nanoparticles Synthesis and Applications
  • Quantum Dots Synthesis And Properties
  • Radioactive element chemistry and processing
  • Photonic Crystals and Applications
  • Surface and Thin Film Phenomena
  • Optical Coatings and Gratings
  • Terahertz technology and applications
  • Semiconductor materials and interfaces
  • Ga2O3 and related materials
  • Chemical Synthesis and Characterization
  • X-ray Diffraction in Crystallography
  • Graphene research and applications
  • Lipid Membrane Structure and Behavior
  • Molecular Junctions and Nanostructures
  • RNA Interference and Gene Delivery
  • Biotin and Related Studies
  • Thermodynamic and Structural Properties of Metals and Alloys

Center for Physical Sciences and Technology
2015-2024

Institute of High Pressure Physics
2020

Vilnius University
2020

Nanolaminates are new class of promising nanomaterials with outstanding properties. Here we explored on the tuning structural properties and enhancement electronic optical 1D PAN ZnO/Al2O3 nanolaminates designed by atomic layer deposition (ALD) electrospinning. The influence bilayer thicknesses fundamental has been investigated. Due to quantum confinement effect, shift XPS peaks higher energies observed. Work function Al2O3 was mostly independent bilayers number, whereas ZnO work decreased...

10.1021/acs.jpcc.5b12263 article EN The Journal of Physical Chemistry C 2016-02-20

Zinc oxide (ZnO) and graphene (G) have been extensively studied because of their unique physical properties. Here, graphene–zinc (G/ZnO) nanolaminates were fabricated, respectively, by chemical vapor deposition low-temperature atomic layer technique. The number obtained G/ZnO layers was tuned from 1 to 11 with a total thickness 100 nm for all prepared nanolaminates. structure, optical properties, interaction between G ZnO X-ray methods, TEM, AFM, Raman, spectroscopy. results interpreted...

10.1021/acs.jpcc.6b07221 article EN The Journal of Physical Chemistry C 2016-09-30

We report on the influence of localized plasmons resonance dispersion function Au layer and strong enhancement UV PL peak in ZnO for Au/ZnO nanostructures synthesized by PVD/ALD.

10.1039/c5tc00964b article EN Journal of Materials Chemistry C 2015-01-01

We present an original type of one-dimensional photonic crystal that includes one anisotropic layer made a lithium niobate thin film. demonstrate the versatility such device sustaining different Bloch surface waves (BSWs), depending on orientation incident wave. By varying illumination multilayer, we measured angle variation 7° between BSWs corresponding to extraordinary and ordinary index The potential platform opens way novel tunable active planar optics based electro- thermo-optical...

10.1364/ol.41.005616 article EN Optics Letters 2016-11-30

Spectroscopic ellipsometry was used for the generation and study of hybrid TPP-SPP mode as a sensor probe real-time formation amalgam structures on surface plasmon active gold layer. The Au/Hg features mercury atoms' penetration into layer were determined by means experimental TIRE data regression analysis multi-layer model containing index-profile behavior coupled excitations provided more information about than single TPP SPP resonances did. present demonstrated possibility using to design...

10.1364/oe.26.030400 article EN cc-by Optics Express 2018-11-05

Terahertz time-domain spectroscopy and Fourier-transform infrared were developed as the method for investigation of high-frequency characteristics two-dimensional electron gas GaN:C buffer layers in AlGaN/AlN/GaN heterostructures grown on a semi-insulating SiC substrate. The reflectance transmittance spectra selected heterostructure studied after top removed by reactive ion etching. Results numerically analyzed using transfer matrix taking into account conductivity via Drude model complex...

10.3390/app11136053 article EN cc-by Applied Sciences 2021-06-29

The adsorption of Eu(III) on composites synthesised from graphene oxide (GO), maghemite (MGH), and chitosan (CS) has been studied using different approaches. physicochemical morphological characteristics the GO-MGH, GO-CS, GO-MGH-CS I, II, III were determined by XRD, Mössbauer spectroscopy, FTIR, Raman TEM. According to results batch experiments, maximum experimental capacity was 52, 54, 25, 103, 102 mg/g for III, respectively. data obtained are in better agreement with Langmuir,...

10.3390/molecules27228035 article EN cc-by Molecules 2022-11-19

In this study, polarized reflection and emission spectroscopy was employed in order to describe experimentally numerically the coherent behavior of surface plasmon phonon polaritons shallow n-type gallium nitride grating. For grating with a 1 μm depth an 11 period, polariton coherence observed measuring reduction linewidth redshift resonance position both spectra increase incident angle. Maximum conditions were found at frequency 562 cm−1 angle 37°, demonstrating length value up 724 (41λ).

10.1063/1.5143220 article EN Applied Physics Letters 2020-03-16

Abstract MBE grown GaBiAs epitaxial layers with Bi content of 3.5%, 5.2%, and 7.5%, sandwiched between GaAs, have been investigated by spectroscopic ellipsometry in the infrared absorption threshold spectral regions. The real imaginary parts dielectric function indicate bandgap E g spin‐orbit splitting Δ 0 + values close to literature data. refractive index IR region 0.2–0.8 eV exceeds that GaAs ca. 0.8%, 2.3%, 3.6%, for 3.5 %, respectively (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

10.1002/pssc.201100696 article EN Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics 2012-05-21

The GaAs1–xBix semiconductor alloy allows one to achieve large bandgap reduction and enhanced spin–orbit splitting energy at dilute Bi quantities. bismide is currently being developed for near- mid-infrared lasers, multi-junction solar cells, photodetectors. In this structure–property relationship study of GaAsBi alloys, we report polarization dependent photoluminescence that reaches a ratio up 2.4 room temperature. Polarization dependence also presented using transmittance spectra,...

10.1063/5.0030091 article EN cc-by Journal of Applied Physics 2020-11-19

Abstract Molecular beam epitaxy growth and analysis of GaAsBi on compositional step-graded InGaAs buffer layers are presented in this study. The developed is only 240 nm thick, exhibits very low surface roughness while reaching up to 0.46% lattice-mismatch with a GaAs substrate. Reciprocal-space mappings showed that 500 thick 2.7%–5.3% Bi remain pseudomorphic the buffer, contrast grown were found incur 50% lattice relaxation. CuPt B -type ordering associated polarized photoluminescence also...

10.1088/1361-6641/ac61ff article EN cc-by Semiconductor Science and Technology 2022-03-29

The molecular beam epitaxy-grown epitaxial, partially relaxed, GaAsBix bismide layers of thickness and x ≈ 0.04 composition are examined. atomic-structure analysis by x-ray diffraction transmission electron microscopy shows the bismides to be CuPt-type atomic-ordered in both subvariants. ordering induces an optical anisotropy, which manifests at normal incidence light-beam propagation. anisotropy is revealed various spectroscopy techniques—polarized photoluminescence, photo-modulated...

10.1088/1361-6463/ac244a article EN Journal of Physics D Applied Physics 2021-09-07

Two series of amorphous silicon nitride films were deposited using a chemical vapour deposition (CVD) reactor with two and three electrodes. Nitrogen gas silane diluted argon mixture (5% SiH 4 + 95% Ar) used as the working gas. The at same time on CaF 2 aluminium-coated glass substrates 300 °C. Changing injected ratios allowed us to shift band gap in 1.85–5.15 eV range. From AFM analysis it was found that samples three-electrode chamber demonstrated lower surface roughness. electrical...

10.3952/physics.v55i1.3056 article EN Lithuanian Journal of Physics 2015-04-21

Among inorganic, Earth-abundant, and low-toxicity photovoltaic technologies, Sb2Se3 has emerged as a strong material contender reaching over 10% solar cell power conversion efficiency. Nevertheless, the bottleneck of this technology is high deficit open-circuit voltage (VOC) seen in many other emerging chalcogenide technologies. Commonly, loss VOC related to nonradiative carrier recombination through defects, but characteristics can also limit achievable VOC. It been reported that...

10.1021/acsaem.2c02131 article EN cc-by ACS Applied Energy Materials 2022-11-16

An algorithm for the Kramers-Kronig analysis of reflectivity spectra, based on an anchor-window technique is presented.The high-frequency asymptote, required analysis, determined by minimizing differences between Kramers-Kronig-deduced optical constants a system under investigation and known measured in small anchor-window.The illustrated applying it reconstruction conductivity σ(ω) fci-ZnMgRE quasicrystals spectral range 0.01-6.5 eV from experimental IR Fourier-transform data ellipsometry...

10.12693/aphyspola.119.140 article EN cc-by Acta Physica Polonica A 2011-02-01

The interband optical transitions of zinc occur across the energy gaps which open at intersections Fermi surface with effective Brillouin zone comprised 002 and 101 families Bragg planes. Theoretical spectra Zn conductivities, calculated in a framework parallel-band absorption, well reproduce experimental data measured by spectroscopic ellipsometry (see Editor's Choice article Karpus et al. on pp. 419–428). There is good agreement positions, spectral weights, polarization dependencies...

10.1002/pssb.201670516 article EN physica status solidi (b) 2016-03-01

Results of optical spectroscopy studies the face-centered icosahedral (fci) single-grain Zn-Mg-Y, Zn-Mg-Ho, and Zn-Mg-Er quasicrystals (QCs) are presented. The dielectric function QCs was measured in 0.01--6 eV spectral range by IR-UV spectroscopic ellipsometry far infrared reflection techniques. A theoretical scheme conductivity calculations is extended to account for Fermi level positions within below a pseudogap. model QC electron energy spectrum, based on band structure hypothesis,...

10.1103/physrevb.88.094201 article EN Physical Review B 2013-09-09
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