A5082198464- Additive Manufacturing and 3D Printing Technologies
- Additive Manufacturing Materials and Processes
- Ion-surface interactions and analysis
- Advanced Electron Microscopy Techniques and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Materials Characterization Techniques
- Aluminum Alloys Composites Properties
- High Entropy Alloys Studies
- Electronic Packaging and Soldering Technologies
- nanoparticles nucleation surface interactions
- Electron and X-Ray Spectroscopy Techniques
- Semiconductor materials and devices
- Machine Learning in Materials Science
- Metal and Thin Film Mechanics
- Ferroelectric and Piezoelectric Materials
- Advancements in Solid Oxide Fuel Cells
- Thermography and Photoacoustic Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Silicon and Solar Cell Technologies
- Luminescence Properties of Advanced Materials
- Advanced materials and composites
- Thermal properties of materials
- Magnetic confinement fusion research
- Electronic and Structural Properties of Oxides
- Plasma Diagnostics and Applications
Sandia National Laboratories
2022-2024
Sandia National Laboratories California
2022-2023
Abstract The need to optimize the processing conditions of additively manufactured (AM) metals and alloys has driven advances in throughput capabilities for material property measurements such as tensile strength or hardness. High-throughput (HT) characterization AM metal microstructure fallen significantly behind pace due intrinsic bottlenecks associated with artisan labor-intensive preparation methods required produce highly polished surfaces. This inequality data led a reliance on...
The additive manufacture of compositionally graded Al/Cu parts by laser engineered net shaping (LENS) is demonstrated. use a blue light build enabled deposition on Cu substrate. thermal gradient and rapid solidification inherent to selective melting mass transport up 4 mm away from substrate through pure Al deposition, providing means producing gradients with finer step sizes than the printed layer thicknesses. Printing structures Al, however, was prevented growth Al$_2$Cu$_3$ dendrites...
Abstract Electrical polarization and defect transport are examined in 0.8BaTiO 3 –0.2BiZn 0.5 Ti O , an attractive capacitor material for high power electronics. Oxygen vacancies suggested to be the majority charge carrier at or below 250°C with a grain conduction hopping activation energy of 0.97 eV 0.92 thermally stimulated depolarization current (TSDC) impedance spectroscopy measurements, respectively. At higher temperature, generated electronic 1.6 is dominant. Significant oxygen vacancy...
Journal Article High-throughput EBSD Characterization of Additively Manufactured Microstructures Get access Luis J Jauregui, Jauregui Sandia National Laboratories, Albuquerque, NM, United States Corresponding author: ljjaure@sandia.gov Search for other works by this author on: Oxford Academic Google Scholar Elliott Fowler, Fowler Timothy Ruggles, Ruggles Dale E Cillessen, Cillessen Kyle L Johnson, Johnson Shelley Williams, Williams Brad Boyce Microscopy and Microanalysis, Volume 29, Issue...
Journal Article Focused Ion Beam Nano-thermometry Get access Julia I Deitz, Deitz Sandia National Laboratories, Albuquerque, NM, United States Corresponding author: jdeitz@sandia.gov Search for other works by this author on: Oxford Academic Google Scholar Timothy J Ruggles, Ruggles Samantha G Rosenberg, Rosenberg Mila N Lam, Lam Luis Jauregui, Jauregui John Williard, Williard Daniel L Perry, Perry Joseph Boro, Boro Wyatt Hodges Microscopy and Microanalysis, Volume 29, Issue Supplement_1, 1...
Journal Article Quantifying Pb in Microelectronic Electrodes to Mitigate Sn Whisker Growth with the Use of Energy Dispersive X-Ray Spectroscopy (EDS) and Image Analysis Get access Luis Jauregui, Jauregui Sandia National Laboratories, Albuquerque, NM, USA Corresponding author: ljjaure@sandia.gov Search for other works by this author on: Oxford Academic Google Scholar Rebecca Wheeling, Wheeling Jeier Yang Microscopy Microanalysis, Volume 28, Issue S1, 1 August 2022, Pages 564–565,...
Abstract We report an unusual artifact induced by Ga+ or Xe+ focused ion beam (FIB) preparation in transmission electron microscopy (TEM) samples with epitaxial layers on a GaSb substrate. The FIB-ed TEM quantum structure made of Al/AlSb/GaSb/InAs/Al0.33Ga0.67Sb multilayers substrate are found to undergo phase modifications under certain conditions related the energy. Dependent voltage used during thinning, Al islands initially top multilayer stack gradually replaced Ga, leading formation...