A5085676253- Semiconductor Quantum Structures and Devices
- GaN-based semiconductor devices and materials
- Radio Frequency Integrated Circuit Design
- Semiconductor materials and devices
- Advanced DC-DC Converters
- Quantum Dots Synthesis And Properties
- Semiconductor Lasers and Optical Devices
- Semiconductor materials and interfaces
- Advanced Semiconductor Detectors and Materials
- Silicon Carbide Semiconductor Technologies
Nagoya University
2021-2024
Osaka University
2011-2013
We study energy-band engineering with nitrogen delta (δ)-doping in GaAs-related quantum structures. A tight-binding calculation indicates that the band structure can be engineered by introducing one-dimensional doping profile of into GaAs. Using molecular beam epitaxy, we prepare δ-doped samples AlGaAs/GaAs wells and GaAs/δ-doped superlattice structures at growth temperature 560 °C. Photoluminescence obtained from shows a clear redshift spectral peak positions dependent on coverage. The...
Using molecular beam epitaxy, we fabricate a superlattice structure having periodically arranged δ-doped nitrogen within GaAs. X-ray diffraction indicates the formation of regularly 0.1 ML certain dispersion every 3.7 nm, multilayered up to 10 periods. Optical transition energies obtained from photoreflectance reflect number That suggests minibands in short-period GaAsN/GaAs quantum wells, as well dispersed distribution about ∼7 also predicted transmission electron microscopy.
The authors carry out δ-doping at the middle of AlGaAs/GaAs quantum wells employing molecular beam epitaxy and varying nitrogen coverage up to 0.5 monolayers. Transmission electron micrography x ray diffraction indicate introduction a δ-doped layer with precisely controlled position coverage. Photoluminescence spectra obtained for samples show clear redshift spectral peak positions depending on amount nitrogen, suggesting band structure is modified by δ-doping. growth can be carried...
In megahertz (MHz) power converters, the gate drive loss becomes one of main issues that should be addressed. relevant literature, several circuits had been proposed to reduce losses. A literature survey is provided in introduction section summarize merits and demerits each circuit. These studies innovative methods loss. Nonetheless, they did not propose any solution buffer stage inside IC. this article, we present a frequency doubler The circuit can double input PWM signal at driver output...