A5078138605- Semiconductor materials and devices
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Diamond and Carbon-based Materials Research
- Nanowire Synthesis and Applications
- Copper-based nanomaterials and applications
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Boron and Carbon Nanomaterials Research
- Gas Sensing Nanomaterials and Sensors
- Silicon Carbide Semiconductor Technologies
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Electrostatic Discharge in Electronics
- Copper Interconnects and Reliability
- Electromagnetic Compatibility and Noise Suppression
- Chalcogenide Semiconductor Thin Films
- Anodic Oxide Films and Nanostructures
- Electric Motor Design and Analysis
- Ga2O3 and related materials
- Advanced Surface Polishing Techniques
- Quantum Dots Synthesis And Properties
- Advanced ceramic materials synthesis
- Electronic and Structural Properties of Oxides
- Photonic and Optical Devices
University of Central Florida
2015-2024
Alagappa University
2009-2024
University of Birmingham
2020
National Institute of Technology Meghalaya
2017
Ajou University
2009-2011
Kalasalingam Academy of Research and Education
2011
Materials Processing (United States)
2006-2008
Orlando Health
1997
National University of Singapore
1993
McMaster University
1984
Ga2O3 has been a subject of interest in research field with varying applications for current and future generation electronic devices. Due to its ultra-wide bandgap 4.5–5.0 eV, extremely high BFOM 3444, other prominent characteristics relating material properties, easy mass-produce economical, β-Ga2O3 finds variety electronics devices, power devices optoelectronics A comprehensive review RF sputtered films along studies are presented this paper the first time. Polymorphs gallium oxide...
Recent commercialization has increased the research interest in transparent conducting oxides like indium tin oxide being implemented display technologies and sensors. A wide range of values (4.2–5 eV) for work function ITO films are reported literature. In this paper, we present an approach to extract from MOSFET devices. RF sputtered is used as a gate electrode fabricate n-MOSFET. For fabrication MOSFET, four-level mask used. Electrical characterization performed on these We obtained value...
Zinc oxide-silicon heterojunctions were fabricated using both n- and p-type silicon. The zinc oxide films deposited by the magnetron sputtering process at various substrate temperatures to form these devices. electrical properties of devices measured work function was evaluated from properties.
This paper presents the development of an ultra-high-speed permanent magnet synchronous motor (PMSM) that produces output shaft power 2000 W at 200 000 rpm with around 90% efficiency. Due to guaranteed open-loop stability over full operating speed range, developed system is compact and low cost since it can avoid design complexity a closed-loop controller. introduces collaborative approach in order ensure both performance requirements range. The actual implementation then discussed. Finally,...
In this work, we demonstrated the phase-tuned MoS2 layers (2H- MoS2, 1 T- and 2H/1 T-MoS2) using a one-pot reaction, scientifically significant due to their impermeable characteristics. Strongly-bonded, vertically-aligned were perceived by transmission electron microscopy (TEM) for T-MoS2 layers. The spacing between two was expanded 0.67 nm, which is favorable intercalation process. Further, mixed-phase sheets successively blended with reduced graphene oxide (rGO) form T-MoS2@rGO hybrid....
CuGaO2 thin films were deposited using the RF magnetron sputtering technique Cu2O and Ga2O3 targets. The at room temperature onto a quartz slide. power of remained constant 50 W, while was systematically varied from 150 W to 200 W. subsequently subjected annealing temperatures 850 °C 900 in nitrogen atmosphere for duration 5 h. XRD analysis on with 175 annealed revealed development nearly single-phase delafossite films. SEM images showed an increasing trend grain size change level. Optical...
The ever-increasing demand for electrical power and the tremendous growth of renewable energy sources in past decade has led designers to design wind turbine system components optimal performance. Cost optimization, weight reduction, higher performances, lower non-conformance cost are a few expectations that expected meet present market condition. Wind unavailability impacts annual production turbine. Overheating is one main challenges overcome. For heating analysis, we discuss generator as...
For better annual energy production, wind turbine generator components are expected to perform efficiently and safely. Development of recent high-efficiency generators motors leading their designs with less cooling capacity. Bearings one the most stressed in generator. Recent studies have indicated that bearing failure is prime cause failure, application. Grease lubrication deterioration was found be failure. service life for closely associated operating temperature. One issue design higher...
Transparent electrically conducting SnO2 films were prepared by the chemical vapour deposition technique. The deposited at substrate temperatures of 400, 450 and 500 degrees C stannous chloride oxidation. optical absorption studies, using unpolarised light, indicated that temperature is an important parameter influencing properties films. edge for occurs about 3.7 eV. also direct transitions 3.95 eV indirect 3.27
Three-dimensionally flexible vertical 2D MoS<sub>2</sub>layers are reported.
The popularity and increased usage of insulated gate bipolar transistors (IGBTs) in power control systems have made the problem cooling them a subject considerable interest recent years. In this investigation, heat flux 825W∕cm2 at die was achieved when air-water spray used to cool IGBTs high current levels. junction temperature device measured accurately through voltage-to-temperature characterization. Results from other technologies experiments were reviewed. A discussion electrical losses...
A compact bi-directional blocking voltage protection clamp with low overshoot and high current handling capability is proposed. Under a high-stress 15-A very fast transmission line pulse, the initial of proposed structure reduced to <80 V. The clamped below 20 V (safe operation voltage) within 2 ns. This allows for turn-on speed protect interface circuits in system-on-a-chip applications narrow electrostatic discharge design window.