Jung Han Kim

ORCID: 0000-0002-6678-2282
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About
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Research Areas
  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Advanced Sensor and Energy Harvesting Materials
  • ZnO doping and properties
  • Graphene research and applications
  • Thin-Film Transistor Technologies
  • Advanced Memory and Neural Computing
  • Semiconductor materials and devices
  • Nanowire Synthesis and Applications
  • Ga2O3 and related materials
  • Quantum Dots Synthesis And Properties
  • Gas Sensing Nanomaterials and Sensors
  • Conducting polymers and applications
  • Chalcogenide Semiconductor Thin Films
  • Advanced Photocatalysis Techniques
  • Orthodontics and Dentofacial Orthopedics
  • IPv6, Mobility, Handover, Networks, Security
  • Advancements in Battery Materials
  • Mobile Agent-Based Network Management
  • Advanced Materials and Mechanics
  • Advanced Chemical Sensor Technologies
  • Electrodeposition and Electroless Coatings
  • Advanced Surface Polishing Techniques
  • Textile materials and evaluations
  • Bone Tissue Engineering Materials

Dong-A University
2010-2025

Pusan National University
2014-2024

University of Central Florida
2018-2022

San Jose State University
2019

Seoul National University
2011-2017

Korea Atomic Energy Research Institute
2014-2016

Korea Basic Science Institute
2016

Government of the Republic of Korea
2015

LG (South Korea)
2014

Samsung (South Korea)
2013

Two-dimensional (2D) transition-metal dichalcogenides (2D TMDs) in the form of MX2 (M: transition metal, X: chalcogen) exhibit intrinsically anisotropic layered crystallinity wherein their material properties are determined by constituting M and X elements. 2D platinum diselenide PtSe2) is a relatively unexplored class TMDs with noble-metal Pt as M, offering distinct advantages over conventional such higher carrier mobility lower growth temperatures. Despite projected promise, much its...

10.1021/acsami.9b01078 article EN ACS Applied Materials & Interfaces 2019-03-11

Two-dimensional transition-metal dichalcogenide (2D TMD) layers are highly attractive for emerging stretchable and foldable electronics owing to their extremely small thickness coupled with extraordinary electrical optical properties. Although intrinsically large strain limits projected in them (i.e., several times greater than silicon), integrating 2D TMDs pristine forms does not realize superior mechanical tolerance greatly demanded high-end devices of unconventional form factors. In this...

10.1021/acs.nanolett.9b01726 article EN Nano Letters 2019-06-17

Abstract Two-dimensional (2D) transition metal dichalcogenide (2D TMD) layers present an unusually ideal combination of excellent opto-electrical properties and mechanical tolerance projecting high promise for a wide range emerging applications, particularly in flexible stretchable devices. The prerequisite realizing such opportunities is to reliably integrate large-area 2D TMDs well-defined dimensions on mechanically pliable materials with targeted functionalities by transferring them from...

10.1038/s41598-018-37219-w article EN cc-by Scientific Reports 2019-02-07

Liquid metals (LMs) have gained great attention due to their fluidic behavior and metallic characteristics, suggesting the LMs be an ideal electrode material for stretchable electronic textiles (e-textiles) in real-time healthcare systems. Despite advancements design techniques enabling monitor physiologic conditions on skin, low biostability of remains challenging practical use e-textile. Here, we introduce a mechanically responsive conductive gold nanoparticle (Au NP) layer as...

10.1021/acsanm.3c00761 article EN ACS Applied Nano Materials 2023-05-04

Two-dimensional (2D) layered materials exhibit many unique properties, such as near-atomic thickness, electrical tunability, optical and mechanical deformability, which are characteristically distinct from conventional materials. They particularly promising for next-generation biologically inspired optoelectronic artificial synapses, offering unprecedented opportunities beyond the current complementary metal–oxide–semiconductor-based computing device technologies. This Research update...

10.1063/5.0096053 article EN cc-by APL Materials 2022-07-01

Prevailing over the bottleneck of von Neumann computing has been significant attention due to inevitableness proceeding through enormous data volumes in current digital technologies. Inspired by human brain's operational principle, artificial synapse neuromorphic explored as an emerging solution. Especially, optoelectronic is growing interest vision essential source information which dealing with optical stimuli vital. Herein, flexible synaptic devices composed centimeter-scale tellurium dioxide (TeO

10.1021/acsnano.4c04851 article EN ACS Nano 2024-07-01

Abstract Heterogeneously integrated 2D van der Waals (vdW) solids composed of compositionally distinct atomic layers are envisioned to exhibit exotic electrical/optical properties unattainable with their monocomponent counterparts. However, the underlying principle for morphology‐controlled chemical vapor deposition (CVD) growth and its associated variables have not been clarified, leaving projected technological opportunities far from being realized. Herein, by employing tungsten trioxide...

10.1002/admi.201800382 article EN publisher-specific-oa Advanced Materials Interfaces 2018-05-17

10.1016/j.net.2025.103557 article EN cc-by-nc-nd Nuclear Engineering and Technology 2025-02-01

Broadband photodetectors covering a spectrum range of visible-to-mid-infrared (Mid-IR) are widely utilized for applications, such as chemical sensing and medical devices. As their physical form factors evolve, variety photoresponsive electronic materials have been explored to adapt demanded mechanical deformability. Herein, we report on vapor deposition (CVD) growth centimeter-sized ultrathin (i.e., sub 10 nm) platinum monosulfide (PtS) films integration onto flexible polyimide (PI)...

10.1021/acsami.4c16559 article EN ACS Applied Materials & Interfaces 2025-02-26

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum or tungsten disulfides (MoS2 WS2) exhibit extremely large in-plane strain limits and unusual optical/electrical properties, offering unprecedented opportunities for flexible electronics/optoelectronics in new form factors. In order them to be technologically viable building-blocks emerging technologies, it is critically demanded grow/integrate onto arbitrary-shaped substrates on a wafer-scale compatible with the...

10.1021/acs.nanolett.7b02776 article EN Nano Letters 2017-09-25

Major barriers to the implementation of nanotechnology include reproducible synthesis and scalability. Batch solution phase methods do not appear have potential overcome these barriers. Microfluidic been investigated as a means enable controllable synthesis; however, most popular constituent microfluidics, polydimethylsiloxane, is ill-suited for mass production. Multi-inlet vortex mixers (MIVMs) proposed method scalable nanoparticle production; control reproducibility wanting. Here, we...

10.1021/acsomega.9b00128 article EN publisher-specific-oa ACS Omega 2019-03-04

SiC focus rings are crucial for ensuring the uniformity of plasma reactive ion etching (RIE) in semiconductor processing. While chemical vapor deposition (CVD) is typically employed to fabricate large scale rings, these often show multiple pinhole surface defects following RIE Here we introduced an approach producing using a physical transportation (PVT), harnessing modified setup. Specific microscopic analysis demonstrated that prepared through PVT method significantly showed millimeter...

10.1016/j.vacuum.2024.113062 article EN cc-by-nc Vacuum 2024-02-18

Electronic devices employing two-dimensional (2D) van der Waals (vdW) transition-metal dichalcogenide (TMD) layers as semiconducting channels often exhibit limited performance (e.g., low carrier mobility), in part, due to their high contact resistances caused by interfacing non-vdW three-dimensional (3D) metal electrodes. Herein, we report that this intrinsic issue can be efficiently mitigated forming the 2D/2D in-plane junctions of 2D semiconductor seamlessly interfaced with For this,...

10.1021/acsami.4c06540 article EN ACS Applied Materials & Interfaces 2024-07-01

The fabrication of fully transparent thin-film transistor (TFT) arrays composed metal oxides and SWCNTs was performed on a glass substrate through simple all-solution-processed, vacuum-free routes followed by thermal annealing treatments at 350 °C which is the lowest processing temperature reported to date. We adopted fluorine-doped indium tin oxide (ITO:F), stacked zirconium oxide/aluminium oxide/zirconium (ZAZ), zinc (IZO), single-walled carbon nanotubes (SWCNTs) for gate electrodes,...

10.1039/c2tc00405d article EN Journal of Materials Chemistry C 2013-01-01

The carbon fiber/metal nanoparticle hybrid structure is a widely studied material combination for various fields such as energy storage, high-performance composites, and biomedical tools. versatile fiber/gold was prepared using an eco-friendly energy-efficient fabrication process to address the sustainability issue. First, cellulose fiber by lyocell process. study obtained high mechanical strength of through contents, strict pulp dissolution conditions, modified spinning, thermal elongation...

10.1021/acssuschemeng.2c01556 article EN ACS Sustainable Chemistry & Engineering 2022-06-24

Flexible and foldable thin-film transistors (TFTs) have been widely studied with the objective of achieving high-performance low-cost flexible TFTs for next-generation displays. In this study, we introduced fabrication TFT devices excellent mechanical stability, high transparency, performance by a fully solution process including PI, YOx, In2O3, SWCNTs, IL-PVP, Ag NWs. The fabricated solution-processed showed higher transmittance above 86% in visible range. Additionally, charge-carrier...

10.1021/acsami.6b00950 article EN ACS Applied Materials & Interfaces 2016-04-27

Two-dimensional (2D) transition metal dichalcogenide (TMD) layers exhibit superior optical, electrical, and structural properties unattainable in any traditional materials. Many of these are known to be controllable via external mechanical inputs, benefiting from their extremely small thickness coupled with large in-plane strain limits. However, realization such mechanically driven tunability often demands highly complicated engineering 2D TMD layer structures, which is difficult achieve on...

10.1021/acsami.8b08178 article EN ACS Applied Materials & Interfaces 2018-07-30

Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are highly promising as field-effect transistor (FET) channels in the atomic-scale limit. However, accomplishing this superiority scaled-up FETs remains challenging due to their van der Waals (vdW) bonding nature with respect conventional electrodes. Herein, we report a scalable approach fabricate centimeter-scale all-2D FET arrays of platinum diselenide (PtSe2) in-plane ditelluride (PtTe2) edge contacts, mitigating...

10.1021/acs.nanolett.3c03666 article EN Nano Letters 2023-12-27
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