Hydrogenated nanocrystalline silicon (nc-Si:H) films were deposited by using 13.56MHz plasma-enhanced chemical vapor deposition at 260°C means of a silane (SiH4) plasma heavily diluted with hydrogen (H2). The high-quality nc-Si:H film showed an oxygen concentration (CO) ∼1.5×1017at.∕cm3 and dark conductivity (σd) ∼10−6S∕cm, while the Raman crystalline volume fraction (Xc) was over 80%. Top-gate thin-film transistors employing optimized ∼100nm channel layer exhibited field-effect mobility...

This paper addresses the low-temperature deposition processes and electronic properties of silicon based thin film semiconductors dielectrics to enable fabrication mechanically flexible devices on plastic substrates. Device quality amorphous hydrogenated (a-Si:H), nanocrystalline (nc-Si), nitride (a-SiN/sub x/) films transistors (TFTs) were made using existing industrial plasma equipment at process temperatures as low 75/spl deg/C 120/spl deg/C. The a-Si:H TFTs fabricated demonstrate...

Nitrogen-rich amorphous silicon nitride (a-SiNx:H) films with [N]/[Si] ratios ranging from 1.4 to 1.7 were deposited by a 13.56 MHz plasma-enhanced chemical vapor deposition method at temperature of 120 °C. The films’ composition, dielectric constant, electrical resistivity, and breakdown voltage evaluated. properties a-SiNx:H ratio more than 1.6 are superior their lower N-content counterparts. Amorphous thin film transistors (TFTs) that incorporate dielectrics fabricated on glass plastic...

This paper reviews amorphous silicon imaging technology in terms of the detector operating principles, electrical and optoelectronic characteristics, stability. Also, issues pertinent to thin film transistor stability are presented along with optimization materials processing conditions for reduced VT-shift leakage current. Selected results shown X-ray optical detectors, transistors, integrated pixel structures. Extension current fabrication processes low (∼120°C) temperature, enabling...

The authors report ultrahigh mobility nanocrystalline silicon thin-film transistors directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C. show maximum effective field effect mobilities of 450cm2∕Vs for electrons and 100cm2∕Vs holes room temperature. argue that the key factor in their results is reduction oxygen content, which acts as an accidental donor.

In this article, we report a fabrication process for hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT) at 120 °C on flexible Kapton® substrates large-area imaging applications. The samples are based the bottom-gate inverted staggered TFT structure. Initially, both sides of substrate coated by nitride (a-SiNx:H), followed nm aluminum (Al) gate. After gate patterning, trilayer is deposited plasma-enhanced chemical vapor deposition comprising 250 a-SiNx:H dielectric, 50...

This paper reviews design considerations along with measurement results pertinent to amorphous silicon (a-Si:H) thin-film transistor (TFT) drive circuits for active matrix organic light-emitting diode displays, and follows from work presented earlier (A. Nathan et al., 2002), 2003). We describe both pixel architectures TFT circuit topologies that are amenable vertically integrated, high aperture ratio pixels. Here, the layer is integrated directly above provide an area at least 90% of total...

We report on the stability of nanocrystalline silicon (nc-Si) bottom-gate (BG) thin film transistors (TFTs) with various compositions hydrogenated amorphous nitride (a-SiNx:H) gate dielectric. TFTs nitrogen-rich exhibit higher output transconductance, threshold voltage stability, and effective field effect mobility (μFE) than devices silicon-rich For example, μFE drops from 0.75to0.2cm2∕Vs when dielectric composition [N]∕[Si] changes 1.3 to 1. The corresponding voltages (VT) are 4 −2V....

The authors discuss time and temperature dependences of the shift in threshold voltage (ΔVT) nanocrystalline silicon (nc-Si) thin film transistors (TFTs) stressed at constant drain currents. In contrast to behavior hydrogenated amorphous (a-Si:H) counterpart, a weak dependence ΔVT was observed. results follow charge trapping model predicted stretched-exponential that saturates prolonged stress times. addition, does not fit into thermalization energy concept developed based on defect state...

Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects subsequent behavior with bias. This distorts extracted device parameters, in particular, field-effect mobility. letter presents method capable accounting for both non-ohmic (nonlinear) ohmic (linear) contact effects solely based upon terminal I-V measurements. Applying our analysis to nanocrystalline silicon transistor, we demonstrate that can...

Fabrication on thin-film transistors (TFTs) flexible plastic substrates for large-area imagers and displays has been made possible by lowering the deposition temperatures, which reduces thermal deformation of substrates, greatly facilitating substrate preparation device patterning. Furthermore, at extremely low much wider variety low-cost plastics or otherwise, are available use. In this article, we report a-Si:H TFTs fabricated 75°C glass substrates. The were using inverted–staggered...

We report on a ZnO-based LC-type passive humidity sensor (HS) using scalable, large-area thin-film semiconductor fabrication process. The reported is capable of monitoring relative (RH) remotely. fabricated 30 mm in diameter and comprises an LC resonator formed via octagonal planar inductor moisture sensitive interdigitated ZnO capacitor series. A printed circuit board reader coil, which can sense the output from <;25 distance, also reported. HS demonstrated to read 30%-90% RH by...

The off current in bottom-gate nanocrystalline silicon (nc-Si) thin-film transistor (TFT) is shown to be determined by the conductivity of channel layer and quality interface with passivation nitride. Indeed, presence fixed charges at nc-Si∕passivation nitride serves increase band bending, leading an about two orders magnitude. In contrast, when nc-Si capped hydrogenated amorphous (a-Si:H), decreases bulk nc-Si, as a-Si:H makes a less defective general effect gate interfaces on bending...

Solar cells on lightweight and flexible substrates have advantages over glass- or wafer-based photovoltaic devices in both terrestrial space applications. Here, we report development of amorphous silicon thin film modules fabricated at maximum deposition temperature 150 °C 100 μm thick polyethylene-naphtalate plastic films. Each module 10 cm × area consists 72 a-Si:H n-i-p rectangular structures with transparent conducting oxide top electrodes Al fingers metal back deposited through the...