A5022547915- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Silicon and Solar Cell Technologies
- Laser Material Processing Techniques
- Nanowire Synthesis and Applications
- Mesoporous Materials and Catalysis
- Organic Electronics and Photovoltaics
- Conducting polymers and applications
- Material Properties and Applications
- Semiconductor materials and interfaces
- Gas Sensing Nanomaterials and Sensors
- Solid-state spectroscopy and crystallography
- Perovskite Materials and Applications
- Nonlinear Optical Materials Studies
- Chalcogenide Semiconductor Thin Films
- Photonic Crystals and Applications
- Zeolite Catalysis and Synthesis
- Orbital Angular Momentum in Optics
- Quantum Dots Synthesis And Properties
- Optical properties and cooling technologies in crystalline materials
- Surface Roughness and Optical Measurements
- Catalysis and Hydrodesulfurization Studies
- Advanced MEMS and NEMS Technologies
- Semiconductor materials and devices
- Radiation Effects and Dosimetry
Lomonosov Moscow State University
2013-2022
Ben-Gurion University of the Negev
2017
Prokhorov General Physics Institute
2017
NS Kurnakova Institute of General and Inorganic Chemistry
2017
Moscow State University
1990-2014
Physico-Technical Institute
2005
Russian Academy of Sciences
2005
Institute of Semiconductors
1994
Chinese Academy of Sciences
1994
Philipps University of Marburg
1990
We demonstrate a comprehensive modification study of silica glass, crystalline silicon, and amorphous silicon film, irradiated by tightly focused cylindrical vector beams with azimuthal radial polarizations. The evidence the longitudinal field associated polarization is revealed second harmonic generation in z-cut lithium niobate crystal. Despite lower threshold ring-shaped materials, center single pulse radially polarized beam not observed. phenomenon interpreted terms enhanced reflection...
Direct-write femtosecond laser nanostructuring of 300 nanometer thick a-Si:H films results in space-variant functional metasurfaces with form birefringence up to Δn ≈ –0.5. Engineering the orientation local optical axis allows implementing continuous phase profiles nearly any element including arrays polarization microconverters and microlenses, gratings, computer-generated holograms gradients ≈1 rad µm−1. The recent advances flat optics have challenged limitations conventional by ultrathin...
The influence of uniaxial stress on the extrinsic photoconductivity gallium-doped germanium has been investigated. It found that long-wavelength cutoff is shifted from 114 μm for zero to 200 a 6.6×103 kg/cm2 along [100] direction. At this value responsivity was ∼2×104 V/W and NEP ∼2×10−11 W/Hz1/2 at 190 μm.
A femto- and picosecond laser assisted periodic nanostructuring of hydrogenated amorphous silicon (a-Si:H) is demonstrated. The grating structure with the subwavelength modulation refractive index shows form birefringence (Δn ≈ −0.6) which two orders magnitude higher than commonly observed in uniaxial crystals femtosecond nanostructured silica glass. laser-induced giant dichroism a-Si:H film introduce extra dimensions to polarization sensitive writing applications that include data storage,...
Visible luminescence is observed from the composite of SiO2 with embedded silicon nanocrystallites produced by femtosecond laser irradiation hydrogenated amorphous (a-Si:H) film in air. The photoluminescence originates defect states at interface between crystallites and matrix. method could be used for fabrication luminescent layers to increase energy conversion a-Si:H solar cells.
Abstract In this work, we present new results on the plasma processing and structure of hydrogenated polymorphous silicon (pm-Si:H) thin films. pm-Si:H films consist a low volume fraction nanocrystals embedded in matrix with medium range order, they possess morphology as significant contribution to their growth comes from impact substrate clusters synthesized plasma. Quadrupole mass spectrometry, ion flux measurements, material characterization by transmission electron microscopy (TEM)...
Halide perovskites are widely studied due to their potential applications in solar cells. Despite the remarkable success increasing perovskite cell efficiency, underlying photophysical processes remain unclear. To cover this gap, we temperature, spectral, and light intensity dependence of photoconductivity CH3NH3PbI3 films planar contact configuration. We observed non-monotonic behavior temperature dependence: a power-law decrease with at temperatures below 185 K close exponential growth...
Abstract It is known that the photovoltaic properties of organic perovskite based solar cells decline at high humidity one disadvantages. We investigated effect on CH 3 NH PbI conductivity can be applied to creation cheap and effective sensors. The measurements have shown has a competitively sensitivity humidity. mechanisms lead change in humid environment are proposed.
A one-dimensional surface relief with a 1.20 ± 0.02 µm period was formed in amorphous hydrogenated silicon films as result of irradiation by femtosecond laser pulses (1.25 µm) fluence 0.15 J cm−2. Orientation the structures determined polarization vector radiation and number acting pulses. Nanocrystalline phases volume fractions from 40 to 67% were detected irradiated according analysis Raman spectra. Observed micro- nanostructuring processes caused plasmon–polariton excitation near-surface...
The modification of boron-doped amorphous hydrogenated silicon films [a-Si:H(B)] with femtosecond laser radiation is studied in this work. It demonstrated that crystallization the a-Si:H(B) film area leads to extremely high values free charge carrier (hole) concentration, which typical for degenerated semiconductors. concentration locally determined by measuring Raman spectra modified areas. shape Fano resonance. found areas may exceed 1020 cm−3 depending on irradiation conditions. such a...
This paper studies the effect of femtosecond laser treatment in air hydrogenated amorphous silicon thin films (a-Si:H) on their structural, electrical and photoelectric properties. The possibility laser-induced crystallization a-Si:H with controlled crystalline volume fraction was shown. A sufficient increase dark conductivity observed for treated which crystallinity exceeds 7%. Such attributed to change mechanism. However, spectral dependences absorption coefficient did not show any...
The crystallization of hydrogenated amorphous silicon films with femtosecond laser pulses is one the promising ways to produce nanocrystalline for photovoltaics. structure treated and their hydrogen content are most important factors determining photoelectric properties materials. In this work we investigated effect irradiation a-Si:H different fluences on crystalline volume fraction, concentration, material. Our results point out that out-diffusion accompanies process. increase...