Ravinder Kumar

ORCID: 0000-0003-1008-217X
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About
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Research Areas
  • Graphene research and applications
  • Molecular Junctions and Nanostructures
  • Carbon Nanotubes in Composites
  • Boron and Carbon Nanomaterials Research
  • Fullerene Chemistry and Applications
  • Semiconductor materials and interfaces
  • Graphene and Nanomaterials Applications
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Nanotechnology research and applications
  • Nanoparticle-Based Drug Delivery
  • Nanowire Synthesis and Applications
  • Advanced biosensing and bioanalysis techniques
  • Quantum and electron transport phenomena
  • Natural Fiber Reinforced Composites
  • Fuel Cells and Related Materials
  • Electrochemical Analysis and Applications
  • Quantum-Dot Cellular Automata
  • Low-power high-performance VLSI design
  • Integrated Circuits and Semiconductor Failure Analysis
  • Mechanical Behavior of Composites
  • Nanoplatforms for cancer theranostics
  • Mechanical Engineering and Vibrations Research
  • Advanced Physical and Chemical Molecular Interactions
  • Tribology and Wear Analysis

Guru Nanak Dev University
2013-2024

10.1557/jmr.2020.205 article EN Journal of materials research/Pratt's guide to venture capital sources 2020-08-12

10.1007/s10825-021-01731-6 article EN Journal of Computational Electronics 2021-07-07

Abstract The stacked nanosheet field-effect transistors (SNS-FETs) are potential contenders for sub-7 nm technology. Device miniaturization leads to a larger off-state current and higher subthreshold slope in SNS-FETs. Unlike SNS-FETs, the tunnelling field effect (SNS-TFETs) function as switches integrated circuits, featuring high performance low power consumption. endeavour aims investigate how each design parameter optimises switching characteristics of SNS-TFET device. This paper examines...

10.1088/1402-4896/ad30e4 article EN Physica Scripta 2024-03-06

In this research work we have modeled, simulated and compared the electronic charge transport for Metal-Semiconductor-Metal interfaces of Graphene Nano Ribbons (GNR) with different geometries using First-Principle calculations Non-Equilibrium Green's Function (NEGF) method. We modeled junctions Armchair GNR strip sandwiched between two Zigzag strips (Z-A-Z) (A-Z-A) semi-empirical Extended Huckle Theory (EHT) within framework Green (NEGF). I-V characteristics were visualized various...

10.1142/s1756973714500036 article EN Journal of Multiscale Modelling 2015-03-01

In this work we have modelled and simulated the electronic charge transport properties for a Single-walled Carbon Nano-tube with different geometries using first-principle calculations Non equilibrium Green's function (NEGF) method. We modeled by rolling Zigzag (4,0) Graphene Nanoribbon strips doping atoms (S,N,P) semi-empirical Extended Huckle Theory (EHT) within framework of non-equilibrium green (NEGF). The simulations were carried in Device mode Atomistic Tool Kit (ATK-12.8.2) its...

10.1109/icanmeet.2013.6609282 article EN 2013-07-01

Abstract The transport properties of molecular wire comprising B 40 fullerene are investigated by employing density functional theory (DFT) and non-equilibrium green’s function (NEGF) methodology. quantum is evaluated calculating the states, transmission spectra at various bias voltages, energy spectra, HOMO-LUMO gap, current–voltage curve, pathways. In context to its properties, results show that increasing length wire, device exhibits rectification ratio prominent NDR behavior. I – V curve...

10.1557/s43578-021-00364-6 article EN cc-by Journal of materials research/Pratt's guide to venture capital sources 2021-10-12

In this work we have modeled and simulated the electronic charge transport properties for a crossed junction of Graphene NanoRibbons (GNR) with different geometries using first-principle calculations Nonequilibrium Green's function (NEGF) method. We Cross two Armchair (4, 4) Nanoribbon strips semiempirical Extended Huckle Theory (EHT) within framework non-equilibrium green (NEGF). The simulations were carried in Device mode Atomistic Tool Kit (ATK-12.8.2) its graphical interface (custom...

10.1109/icanmeet.2013.6609284 article EN 2013-07-01
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