A5063894276- Microwave Engineering and Waveguides
- Electromagnetic Compatibility and Noise Suppression
- Organic Light-Emitting Diodes Research
- Semiconductor materials and devices
- 2D Materials and Applications
- Conducting polymers and applications
- Organic Electronics and Photovoltaics
- 3D IC and TSV technologies
- Advanced Memory and Neural Computing
- Radio Frequency Integrated Circuit Design
- Advanced Antenna and Metasurface Technologies
- Thin-Film Transistor Technologies
- Transition Metal Oxide Nanomaterials
- Quantum Dots Synthesis And Properties
- Perovskite Materials and Applications
- Photonic and Optical Devices
- Diamond and Carbon-based Materials Research
- Graphene research and applications
- Silicon and Solar Cell Technologies
- Topological Materials and Phenomena
- Photoreceptor and optogenetics research
- Millimeter-Wave Propagation and Modeling
- Chalcogenide Semiconductor Thin Films
- Laser-induced spectroscopy and plasma
- Electrostatic Discharge in Electronics
Shanghai Normal University
2023-2025
Guangzhou Medical University
2024
Shenzhen Institutes of Advanced Technology
2020-2024
Southern University of Science and Technology
2024
Shanghai Jiao Tong University
2010-2023
Chinese Academy of Sciences
2020-2022
Institute of Physics
2016-2019
Shanghai Fudan Microelectronics (China)
2018-2019
Fudan University
2018-2019
State Key Laboratory of ASIC and System
2018-2019
Monolayer antimonene is fabricated on PdTe2 by an epitaxial method. theoretically predicted to have a large bandgap for nanoelectronic devices. Air-exposure experiments indicate amazing chemical stability, which great device fabrication. A method fabricate high-quality monolayer with several properties novel electronic and optoelectronic applications provided.
Group-V elemental monolayers were recently predicted to exhibit exotic physical properties such as nontrivial topological properties, or a quantum anomalous Hall effect, which would make them very suitable for applications in next-generation electronic devices. The free-standing group-V monolayer materials usually have buckled honeycomb form, contrast with the flat graphene monolayer. Here, we report epitaxial growth of atomically thin element antimony on Ag(111) substrate. Combined study...
Polymer light-emitting electrochemical cells with long operating lifetimes (see figure) are reported. The ions inside the luminescent semiconducting polymer spatially redistributed by applying a voltage at temperature above melting point of ionic liquid. These ionic-liquid-based also exhibit excellent current-rectification diode properties, single-phase active layer, and short response times.
Two-dimensional topological materials have attracted intense research efforts owing to their promise in applications for low-energy, high-efficiency quantum computations. Group-VA elemental thin films with strong spin–orbit coupling been predicted host topologically nontrivial states as excellent two-dimensional materials. Herein, we experimentally demonstrated the first time that epitaxially grown high-quality antimonene monolayer islands buckled configurations exhibit significantly robust...
This letter demonstrates a white organic light-emitting diode (OLED) with high color stability fabricated by using single white-emitting layer. The dopants were introduced prior to the device fabrication process through solid solution formed high-temperature and high-pressure fusion process. A band gap material, α-naphthlyphenylbiphenyl diamine, was adopted precisely doped several kinds of fluorescent dyes as emitting material. most important benefits this fused solid-solution technique are...
Substrate integrated coaxial line (SICL) is a kind of planar transmission line, which can guarantee the propagation transverse electromagnetic mode wave within wide band. In this paper, multichannel SICL array with lines placed in both vertical and horizontal directions proposed for high-speed parallel data transmission. The adjacent channels share outer conductors high-density integration. Moreover, conductor enhanced by metal fence to suppress crosstalk between array. addition,...
A neuromorphic electronic system requires the component devices to not only mimic typical synaptic behaviors but also be energy-efficient, together with excellent uniformity and tunable memory time. For this purpose, we fabricated amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors plasma-enhanced atomic layer deposition AlO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> :H dielectrics, successfully demonstrating behaviors, such as...
Multifunctional electronic devices that possess synchronously multiphysical characteristics are in great demand to be widely used various complex conditions. Herein, for the most promising light-sensitive materials thin-film solar cells, Cu2ZnSn(S,Se)4 (CZTSSe) was designed and fabricated a resistive switching memory device with structure of Al/CZTSSe/Mo; further, its properties were investigated details. The obtained optimal effect HRS/LRS resistance ratio ∼27.5 indicates possesses good...
Power consumption in interconnects is a critical constraint on performance improvements integrated circuits. This paper proposes novel design methodology to minimize loss and address this limitation. The approach incorporates air cavities within the substrate lower equivalent tangent, thereby reducing dielectric losses. Additionally, inner conductor engineered with periodically nonuniform width maintain stable effective characteristic impedance. To validate effectiveness of methodology, it...
In this paper, a wide band single-mode substrate integrated coaxial line (SICL) with the coplanar waveguide (CPW) transition is presented, which capable of working from DC to 40GHz. The proposed SICL manufactured low temperature co-fired ceramic (LTCC) process. A vertical via hole employed drive signal structure characteristic impedance matching. measured results S parameters agree well simulated Finally, data rate up 32Gb/s achieved interconnect, including good eye diagram and bit error (BER).
DOI: 10.1002/adma.200702325 Figure 2 of this article is incorrect. The corrected figure appears below:
To improve the electrical performance of thin-film transistors with an atomic-layer-deposited Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> dielectric/InO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> channel, plasma surface treatments InO back channel are explored in comparison thermal annealing. It is demonstrated that treatment can enhance device much more efficiently than...
A high-speed data transmission system using half mode substrate integrated waveguide (HMSIW) is proposed in this paper. The HMSIW transmits the signal by TE <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5,0</sub> so channel bandwidth from cutoff frequency of to xmlns:xlink="http://www.w3.org/1999/xlink">1.5,0</sub> mode. In contrast, traditional SIW xmlns:xlink="http://www.w3.org/1999/xlink">10</sub> and...
Light-stimulated synaptic devices are promising candidates for the development of artificial intelligence systems because their unique properties, which include broad bandwidths, low power consumption, and superior parallelism. The key to develop such is realization photoelectric behavior in them. In this work, visible-light-stimulated transistors based on CdSe quantum dot (CdSe QD)/amorphous In-Ga-Zn-O hybrid channels proposed. This design can not only improve charge separation efficiency...
Half-mode substrate integrated waveguide (HMSIW) is a high-pass transmission line, which can be easily into planar circuits. Compared with SIW, HMSIW features wider relative bandwidth and smaller size. The quadrature phase-shift keying (QPSK) scheme double the signal rate compared simple mixing scheme. In this paper, an 8-24-GHz frequency band designed fabricated, then high-speed data system using QPSK implemented based on HMSIW. mathematic modeling of provided to analyze time-domain...
Substrate integrated waveguide (SIW) is regarded as an available interconnects solution for high-speed data transmission. In this paper, in order to further improve the rate and bandwidth usage, SIW interconnect system based on Quadrature Phase Shift Keying (QPSK) modulation demodulation technique proposed. The associated theoretical models validate feasibility of presented system. A fabricated prototype with 14-28 GHz experimentally evaluated developed QPSK communication Experimental...
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Substrate integrated coaxial line (SICL) is a printed inside the circuits, which can be used as chip-to-chip interconnect. Ball grid array (BGA) widely in chip packaging. In this paper, broadband transition designed to connect SICL and BGA chip. Firstly, prototype formed by an two quasi-coaxial transitions fabricated using low temperature co-fired ceramic (LTCC) process. The measured S-parameters of agree well with simulated results from dc 67 GHz. Secondly, are SICL-transition-BGA...
In this paper, an electrothermal model is proposed for transient analysis of interconnects on CMOS integrated circuits excited by electrostatic discharge pulse. A thermal transmission-line network established to the conduction in interconnect structure. The exact input impedance obtained and then inverse fast Fourier transformation used predict responses interconnects. An iterative process developed include effects that positive feedback occurs between electrical behaviours interconnects,...
Substrate integrated coaxial line (SICL) has wideband and low loss features due to its quasi-closed structure. In this paper, a 50 Ω SICL-based interconnect with quasi-coaxial transition is designed fabricated under silicon-based MEMS process. Due impedance discontinuity between the SICL transition, step matching circuit introduced for reflection loss. The measurement results show that 3 dB bandwidth of 77 GHz. Compared those other processes, process wider lower hence it can be applied in...