Hot-wire-assisted atomic layer deposition (HW-ALD) has been identified as a successful method to form high quality metallic films using metallocene and NH3. A cobalt film formed by HW-ALD cobaltocene NH3 was successfully demonstrated. The authors have elucidated the mechanism of during precursor feed period reducing period. In case cobalt, temperature above 300 °C is needed avoid an inclusion carbon impurities. This because physisorbed species are involved NH2 radical promotes dissociation...

Supercritical fluid deposition (SCFD) of Cu onto ultranarrow vias (50 to 220 nmφ and 1 µm depth) was studied with using angled polishing for future ultralarge scale integration metallization. SCFD conformally fabricated a smooth, continuous, 10-nm-thick film in vias. Excess H2 compared the precursor as well surface saturation enabled uniform nucleation conformal deposition. Highest concentration this study (0.39 mol/L) promoted density, resulting formation smooth continuous film. In...

Cobalt film with tungsten addition [Co(W)] has the potential to be an effective single-layered barrier/liner in interconnects awing its good adhesion Cu, a lower resistivity than TaN, and improved barrier property respect cobalt films. Our previous study on chemical-vapor-deposited (CVD) Co(W) using carbonyl precursors clarified, however, that WO3 included films increased resistivity. In this current study, reduce of Co(W), oxygen-free were fabricated from two precursors,...

Cobalt film with tungsten addition [Co(W)] has the potential to be an effective single-layered barrier/liner in interconnects awing its good adhesion Cu, a lower resistivity than TaN, and improved barrier property respect cobalt films. Our previous study on chemical-vapor-deposited (CVD) Co(W) using carbonyl precursors clarified, however, that WO 3 included films increased resistivity. In this current study, reduce of Co(W), oxygen-free were fabricated from two precursors,...

Three Cu-precursors [Cu(hfac) 2 , Cu(DPM) and Cu(acac) ] for supercritical fluid deposition (SCFD) were evaluated based on their adhesion strength onto a TiN underlayer ULSI metallization. Although the fluorinated precursor, Cu(hfac) has highest solubility in CO among these three precursors, deposited Cu film was hazy had poor property due to fluorine at interface of its underlayer. The two non-fluorinated dramatically improved film. lowest it nucleation temperature much smoother surface...

Silicon carbide (SiC) films were prepared from methyltrichlorosilane (MTS) and H2 at temperatures ranging 900 to 1000°C by low-pressure chemical vapor deposition (CVD). Multi-scale analysis was performed on the SiC film growth rate using a profile for tubular reactor that 300 mm long inlet outlet step coverage (SC) micron-sized trenches. The precursor consumption ratio estimated quadrupole mass spectrometer (QMS). These systematic analyses revealed MTS not direct species deposition. We...

High-purity Ni films were deposited using hot-wire-assisted atomic layer deposition (HW-ALD) at temperatures of 175, 250, and 350 °C. Negligible amount nitrogen or carbon contamination was detected, even though the authors used NH2 radical as reducing agent nickelocene precursor. radicals generated by thermal decomposition NH3 with assist HW to reduce adsorbed metal growth precursors. To understand improve process, kinetics HW-ALD analyzed a Langmuir-type model. Unlike remote-plasma-enhanced...

The results of a systematic investigation aimed at determining the dominant gas phase chemistry active during GaN MOVPE are reported and discussed in this work. This study was performed developing thermodynamic database including most stable species mechanism that could efficiently describe their interconversion kinetics. data kinetic were calculated combining density functional theory ab initio simulations. Structures vibrational frequencies reactants transition states determined...

The initial nucleation and coalescence of Cu by supercritical fluid deposition (SCFD) were monitored measuring the surface reflectivity visible white light. at 770 nm is sensitive to nucleation, thus, temperatures Cu-SCFD can be easily this in situ technique. temperature was found independent precursor concentration, which suggests a strong adsorption saturation source high concentration. A H2 concentration up 0.39 mol/L with Cu(tmhd)2 as decrease from 215 180 °C. also effective for...

Cu–Ag alloy films for microelectronics interconnects were deposited by H2 reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)copper(II) [Cu(tmhd)2] and (1,5-cyclooctadiene) (hexafluoroacetylacetonato)silver(I) [Ag(hfac)(COD)] in supercritical carbon dioxide (scCO2). By varying Ag precursor concentration from 0.001 to 0.003 mol %, while keeping Cu constant, the maximum content film can be adjusted 1.2 7.8 at. %. Silver was concentrated near substrate, because deposition could initiated...

Feasibility of step coverage (SC) by supercritical fluid deposition (SCFD) Cu was evaluated using a finite element method (FEM) simulation with experimentally estimated kinetics and transport properties the precursor. This SC Cu-SCFD compared that chemical vapor (CVD). SCFD showed superior SC, especially for ultra narrow features less than 1 µm wide, although CVD has higher diffusion coefficient. due to non-linear reaction (CVD linear kinetics), where precursor concentration had negligible...

Underlayer dependence can be controlled for supercritical fluid deposition (SCFD) of Cu. SCFD, which has a remarkable potential ultra-conformal and gap-filling, previously required metallic underlayer to initiate deposition. Here, this constraint been overcome by depositing novel catalytic layer, CuMn x O y , onto semiconducting insulating substrate. The stoichiometry affected both the morphology film effect on succeeding SCFD By using technique as conformal Cu was achieved high-aspect-ratio...

Cobalt film with tungsten addition [Co(W)] has the potential to be an effective single-layered barrier/liner in Cu-interconnects owing its good adhesion Cu, a lower resistivity than TaN, and improved barrier property respect cobalt films. Our previous study on chemical-vapor-deposited (CVD) Co(W) using carbonyl precursors clarified, however, that WO3 included films increased resistivity. In this current study, reduce of Co(W), oxygen-free process for were designed two amidinato precursors,...

We designed Co(W) films with the self-assembled grain-boundary stuffing as a single-layer barrier/liner for future ULSI Cu-interconnects. HR-TEM and EDX observations confirmed validity of our materials design good barrier performance in films.

The kinetics of heterogeneous nucleation during chemical vapor deposition (CVD) is still unclear despite its importance. Nucleation delay often observed in many CVD processes, which known as the incubation period (τi). In this study, effects concentration (C) and sticking probability (η) film-forming species on τi were formulated based our kinetic model. To discuss kinetics, τi-1 with rate dimension was used using C η. Because η onto surfaces (ηhetero) difficult to evaluate, study initiated...

This report verified the existing gas-phase elementary reaction models for chemical vapor deposition (CVD) of silicon carbide (SiC) from methyltrichlorosilane (MTS) developed by Iowa State University (ISU model) and Scientific Research Associates (SRA model). SiC-CVD involves consecutive reactions starting MTS to form intermediate species, followed their surface reactions. In this study, were with respect overall decomposition rate constant (kMTS), which was evaluated at 960–1000°C using a...

Cobalt film with tungsten [Co(W)] has the potential to be an effective single-layered barrier/liner in interconnects, due its good adhesion Cu, low resistivity compared TaN, and comparable barrier properties TaN. To reduce of Co(W), oxygen-free Co(W) was fabricated from precursors, bis(N-tert-butyl-N'-ethylpropionamidinato) cobalt bis(tert-butylimino)bis(dimethylamino) tungsten, by chemical vapor deposition (CVD) atomic layer (ALD). Our results showed that W addition improved both CVD-Co(W)...

Conformal TiO2 having a smooth surface was deposited using flow-type reactor for supercritical fluid deposition (SCFD). Ti(O-iPr)2(tmhd)2 selected as the best candidate SCFD from among three candidates because it exhibited results according to following criteria: solubility in CO2 (scCO2), carbon impurities TiO2, and morphology of film. The growth rate increased with increasing temperature 200 300°C. activation energy this range measured be about 46.3 kJ/mol. Compared conventional methods,...

Conformal chemical vapor deposition (CVD) of silicon carbide (SiC) from methyltrichlorosilane (MTS) and hydrogen (H2) onto high-aspect-ratio (HAR; typically >100:1) three-dimensional features has been a challenge in the fabrication ceramic matrix composites. In this study, impact heterogeneous underlayers on initial nucleation SiC-CVD was studied using HAR (1000:1) microchannels with tailored wetting underlayer Si(100) dewetting thermally formed amorphous dioxide (a-SiO2) turbostratic boron...

We used atom probe tomography (APT) to study the use of a Cu(Mn) as seed layer Cu, and Co(W) single-layer reliable Cu diffusion barriers for future interconnects in ultra-large-scale integration. The enhances adhesion prevent electromigration stress-induced voiding failures. may enhance barrier performance by stuffing pass with Mn. APT was visualize distribution W Mn three dimensions sub-nanometer resolution. found segregate at grain boundaries Co, which prevents via boundaries. diffuse from...