A5057006579- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Physics of Superconductivity and Magnetism
- Semiconductor materials and devices
- Advanced Physical and Chemical Molecular Interactions
- Topological Materials and Phenomena
- Electron and X-Ray Spectroscopy Techniques
- Surface and Thin Film Phenomena
- Electronic and Structural Properties of Oxides
- Diamond and Carbon-based Materials Research
- Vacuum and Plasma Arcs
- Cold Atom Physics and Bose-Einstein Condensates
- Nanowire Synthesis and Applications
- Healthcare professionals’ stress and burnout
- Radio Frequency Integrated Circuit Design
- Adhesion, Friction, and Surface Interactions
- Atomic and Subatomic Physics Research
- Employment and Welfare Studies
- Photonic and Optical Devices
- Family Caregiving in Mental Illness
- Graphene research and applications
- Workplace Health and Well-being
- Theoretical and Computational Physics
- Mental Health and Patient Involvement
University of Florida
2021-2024
Sandia National Laboratories
2007-2023
Center for Integrated Nanotechnologies
2007-2023
University of Wisconsin–Madison
2023
Delft University of Technology
2019
QuTech
2019
Sandia National Laboratories California
2016
McGill University
2007-2014
Hôpital Louis-H Lafontaine
2012
Quantum computation by non-Abelian Majorana zero modes (MZMs) offers an approach to achieve fault tolerance encoding quantum information in the non-local charge parity states of semiconductor nanowire networks topological superconductor regime. Thus far, experimental studies MZMs chiefly relied on single electron tunneling measurements which leads decoherence stored MZM. As a next step towards computation, conserving experiments based Josephson effect are required, can also help exclude...
We report Coulomb drag measurements between vertically-integrated quantum wires separated by a barrier only 15 nm wide. The temperature dependence of the resistance is measured in true one-dimensional (1D) regime where both have less than one 1D subband occupied. As function temperature, an upturn observed three distinct devices at $T^* \sim 1.6$ K. This crossover behaviour consistent with Tomonaga-Luttinger liquid models for 1D-1D wires.
The aim of this study was to investigate the relationships between 4 dimensions psychosocial work environment (psychological demands, decision latitude, social support, and effort-reward) among health care professionals as well their psychological distress during a reorganization process. A correlational descriptive design used for quantitative study. total 159 completed questionnaire at T1, 141 T2. First, before reorganization, effort-reward imbalance sole variable that significantly...
We report the magneto-transport study and scattering mechanism analysis of a series increasingly shallow Si/SiGe quantum wells with depth ranging from ∼ 100 nm to 10 away heterostructure surface. The peak mobility increases depth, suggesting that charge centers near oxide/semiconductor interface are dominant source. power-law exponent electron versus density curve, μ ∝ nα, is extracted as function Si well. At intermediate densities, dependence characterized by α 2.3. highest achievable...
Coulomb drag experiments have been an essential tool to study strongly interacting low-dimensional systems. Historically, this effect has explained in terms of momentum transfer between electrons the active and passive layer. Here, we report measurements laterally coupled GaAs/AlGaAs quantum wires multiple one-dimensional (1D) sub-band regime that break Onsager's reciprocity upon both layer current direction reversal, contrast prior 1D results. The signal shows nonlinear current-voltage...
We report the magneto-transport, scattering mechanisms, and effective mass analysis of an ultra-low density two-dimensional hole gas capacitively induced in undoped strained Ge/Si0.2Ge0.8 heterostructure. This fabrication technique allows densities as low p ∼ 1.1 × 1010 cm−2 to be achieved, more than one order magnitude lower previously reported doped Ge/SiGe heterostructures. The power-law exponent electron mobility versus curve, μ ∝ nα, is found α 0.29 over most range, implying that...
We report on a systematic investigation of the dominant scattering mechanism in shallow two-dimensional electron gases (2DEGs) formed modulation-doped GaAs/AlxGa1−xAs heterostructures. The power-law exponent mobility versus density, μ∝nα, is extracted as function 2DEG’s depth. When shallower than 130 nm from surface, 2DEG, well mobility, drops α≃1.65 (130 deep) to α≃1.3 (60 deep). Our results for 2DEGs are consistent with theoretical expectations by remote dopants, contrast mobility-limiting...
Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while in systems with pseudo-spin indices can be induced gate control. We report here a gate-controlled quantum transition between two real spin states conventional two-dimensional system without any in-plane magnetic field. show that ratio of splitting to cyclotron gap Ge hole increases decreasing density owing inter-carrier interactions. Below critical...
The Cooper-pair transistor (CPT), a small superconducting island enclosed between two Josephson weak links, is the atomic building block of various quantum circuits. Utilizing gate-tunable semiconductor channels as energy scale associated with tunneling can be changed respect to charging island, tuning extent its charge fluctuations. Here, we directly demonstrate this control by mapping level structure CPT made an indium arsenide nanowire (NW) aluminum shell. We extract device parameters...
We report the design, fabrication, and magneto-transport study of an electron bilayer system embedded in undoped Si/SiGe double-quantum-well heterostructure. Combined Hall densities (nHall) ranging from 2.6 × 1010 cm−2 to 2.7 1011 were achieved, yielding a maximal combined mobility (μHall) 7.7 105 cm2/(V ⋅ s) at highest density. Simultaneous population both quantum wells is clearly observed through drop as density increased nHall > 3.3 cm−2, consistent with Schrödinger-Poisson...
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping SiGe heterostructures. To preserve the substrate structure and elastic state, use T $\leq 800^\circ$C process prepare clean Si$_{0.86}$Ge$_{0.14}$ surfaces suitable for fabrication. P-saturated is incorporated capped with epitaxial Si under thermal budget compatible Hall measurements at T$=0.3$ K show that doped...
Abstract Electrostatic gates are of paramount importance for the physics devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion electrons in selected areas. This field-effect gating enables fabrication a wide range such as, example, quantum point contacts (QPC), interferometers and dots. To fabricate these gates, processing is usually performed 2DEG material, which many cases detrimental to its mobility. Here we propose an alternative process does not...
Abstract In the presence of a lateral periodic potential modulation, two-dimensional electrons may exhibit interesting phenomena, such as graphene-like energy-momentum dispersion, Bloch oscillations, or Hofstadter butterfly band structure. To create sufficiently strong modulation using conventional semiconductor heterostructures, aggressive device processing is often required, unfortunately resulting in disorder that masks sought-after effects. Here, we report novel fabrication process flow...