A5090038244- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Photonic and Optical Devices
- Neuroscience and Neural Engineering
- Transition Metal Oxide Nanomaterials
- Advanced ceramic materials synthesis
- Advanced Optical Sensing Technologies
- Metal and Thin Film Mechanics
- GaN-based semiconductor devices and materials
- Advanced Photocatalysis Techniques
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Ga2O3 and related materials
- CCD and CMOS Imaging Sensors
- Nanowire Synthesis and Applications
- Perovskite Materials and Applications
- MXene and MAX Phase Materials
- Coral and Marine Ecosystems Studies
- Terahertz technology and applications
- Acoustic Wave Resonator Technologies
- Neural Networks and Reservoir Computing
Institute of Semiconductors
2020-2024
Guangdong Academy of Sciences
2019-2024
Interface interactions between perovskite materials and substrates are of great significance for the development high-quality materials. Herein, we have successfully prepared Cs2AgBiBr6 double-perovskite films via a one-step spin-coating process demonstrated novel approach that modifies surface with an ultrathin metal oxide (MOx) layer to promote film quality photoelectric performance. Characterization results strongly suggest improvement is attributed Bi–O interfacial interaction at...
We present a terahertz (THz) sensing chip capable of detecting trace biomolecules. Its operating bandwidth stretches from 0.2 to 1.35 THz, signal strengths exceeding 38 dB above noise levels, achieved by the mitigation mode competition issues. The high sensitivity is used observe absorption fingerprints α-lactose monohydrate, L-tyrosine, and L-histidine powders at their characteristic frequencies for sample masses as low 0.3 mg. Using solution titration technique, we demonstrate detection...
In this work we investigated the effects of bias voltage and incident power on bandwidth SACM Ge/Si APD using numerical analyses compared them with experimental results. temporal response near breakdown is dominated by electrical-field-initiated impact ionization process, thus strength distribution electrical field offer clear explanation variation bandwidth. Beyond widely-discussed space-charge effect in multiplication layer, which account for reduction field, here argue that, as increases...
There are unrevealed factors that bring about the performance variations of resistive switching devices. In this work, Pt/CeO x /Pt devices prepared by magnetron sputtering showed rectification in their asymmetrical current-voltage (I-V) curves during voltage sweeps. X-ray photoelectron spectroscopy deposited CeO film had an inhomogeneous composition, and more oxygen vacancies existed near top electrode. The resistance change can be explained presence charged electrode, along with Schottky...
TiN/HfO 2 /CeO x /TiN memristors were prepared by magnetron sputtering. To further improve their performance, the devices rapidly thermally annealed at different temperatures for times. Compared with those of unannealed devices, coefficients variation (CVs) set voltage ( V SET ) and reset RESET reduced 35.1% 59.4%, respectively, CVs resistances in low high resistance states R LRS HRS 70.2% 52.7%, after annealing 400°C min air. Through X‐ray diffraction, photoelectron spectroscopy, I ‐ curves...
We propose a Ge/Si photodetector based upon photovoltaic field effect transistor (PVFET) for low-power silicon photonics. The device realizes detection by modulating the conductivity of FET channel through photo-induced gate voltage, exhibiting ultra-high responsivity. responsivity can reach about 104 A/W at operating voltages lower than 1.5 V. Furthermore, its light-to-dark (on/off) current ratio and temporal response characteristics are studied numerically. A maximum on/off up to 193 be...