Stretchable and wearable strain sensors based on Ag nanodendrites with high stretchability sensitivity are fabricated by directly screen-printing technology.

Abstract Achieving all‐printed, low‐cost, and large area electronic devices poses challenging requirements in employing printing technologies conductive materials for flexible wearable heaters. In this work, fully printed, scalable, patterned heaters based on Ag fractal dendrites (FDs) are fabricated through straightforward screen technology. The FDs possess low sheet resistance with ≈0.83 Ω sq −1 when sintered at temperature of 60 °C. directly printed thin polyethylene terephthalate...

Surface-enhanced Raman scattering (SERS)-based capillary system is a promising route toward fast, real-time, and in-situ detection using facile sampling process. Here, we demonstrate for the first time resonance-tunable SERS-active capillaries with high sensitivity, reproducibility, stability. The strong signal consistency independent of measurement spots or storage supports long-term tracking analytes in practical use. were successfully applied to pesticide residues, process provides...

A flexible and stretchable conductor was achieved by embedding fractal-structured silver particles in a PDMS substrate, which can stretch up to 100% bend twist 180°, possesses good mechanical electronic stability.

Visible light communication (VLC) is a promising candidate for high-speed wireless with numerous unlicensed spectrum. To achieve data communication, it requires intense signals concentrated on tiny fast photodiode. The common way of using focusing optics reduces the field view (FoV) photodiode due to conservation étendue. Luminescent solar concentrators (LSC) provide solution enhance without affecting FoV. In this paper we demonstrate nanopatterned LSCs fabricated flexible plastics that...

A fused InGaAs-Si avalanche photodiode (APD) with a low excess noise factor of 2.3 at gain 20 is reported. This corresponds to k 0.02 for the silicon region. Dark current density as 0.04 mA/cm/sup 2/ -5 V and 0.6 10 are measured; small thermal coefficient, 0.09%//spl deg/C, breakdown voltage observed this APD.

Room temperature recrystallization is an intriguing method of fabricating CsPbX3 perovskite quantum dots since it does not involve high or inert atmosphere, offering a promising route to the mass production at low cost. However, their performance stability during work was seldom investigated and far from requirements for practical applications. Here, we demonstrate facile low-cost significantly improve thermal, photo- water room-temperature synthesized by effectively suppressing unfavored...

The successful integration of a laser into the silicon photonic chip has long been holy grail photonics. Among various methods addressing this challenge, nanocrystal (Si NC) lasers remain tempting but debated topic due to their complex carrier recombination process. Here we demonstrate an optically pumped edge-emitting first-order distributed feedback Si NC by utilizing versatile nanoimprint lithography method incorporating composite working stamp. Upon femtosecond pulsed pumping, find that...

Halide perovskite materials have rapidly emerged as outstanding optoelectronic for solar cells, light-emitting diodes (LEDs), and lasers. Compared to hybrid organic-inorganic perovskites, all-inorganic perovskites shown unique merits that may contribute the ultimate goal of developing electrically-pumped In this paper, we demonstrate a distributed feedback (DFB) resonator using an thin film gain medium. The has coefficient 161.1 cm-1 loss 30.9 cm-1. Excited by picosecond pulses,...

With the development of nanomanufacturing methods, manipulation photons down to nanoscale in silicon integrated optical chips has become a feasible and promising solution for next-generation data processing as electronic reach their limit. As an essential active device that generates all other working photonic components, lasers are last barrier achieve chips. Although gain nanocrystals (Si-NCs) was observed 2000, progress realizing all-Si been very limited due inferior compared traditional...

In this letter, an InGaAs-on-Si single photon avalanche diode (SPAD) for telecommunication wavelengths is presented. This SPAD demonstrates high-single-photon quantum efficiency and low-dark-count probability under gated mode operation. We attributed the good performance of device to high absorption coefficient InGaAs low noise multiplication Si.

Abstract Hybrid metal halide perovskite–based light‐emitting diodes and lasers have demonstrated outstanding performance currently lead a new trend in the optoelectronic field; however, widely used one‐step spin‐coating method assisted by an antisolvent suffers from narrow processing window of antisolvents, which limits its further use commercial applications. The present work incorporates trivalent‐neodymium ions (Nd 3+ ) into methylammonium tribromide (MAPbBr 3 perovskite thin films to...

A new kind of high-throughput and highly sensitive NIR-SERS biochemical sensor is developed by combining inkjet printing technology with plasmonic Au@AuAg nanorods, which paves an effective way to achieve low-cost HNIR-SERS chips.

In this work we investigated the effects of bias voltage and incident power on bandwidth SACM Ge/Si APD using numerical analyses compared them with experimental results. temporal response near breakdown is dominated by electrical-field-initiated impact ionization process, thus strength distribution electrical field offer clear explanation variation bandwidth. Beyond widely-discussed space-charge effect in multiplication layer, which account for reduction field, here argue that, as increases...

We report on the device fabrication and measured performance of p-i-n photodiodes made from wafer-bonded InGaAs-on-Si material. Dark currents below 38 pA 3-dB bandwidths above 11 GHz were for a -4-V bias an active area diameter 20 μm. The thermal conductivity silicon enables 200-MHz 1-dB compression current 76.5 mA, nonoptimized test devices. These devices dissipate upwards 612 mW electrical power. High-yield wafer-scale photodetectors is demonstrated.

Raspberry-like structure, providing a high degree of symmetry and strong interparticle coupling, has received extensive attention from the community functional material synthesis. Such structure constructed in nanoscale using gold nanoparticles broad applicability due to its tunable collective plasmon resonances, while synthetic process with precise control morphology is critical realizing target functions. Here, we demonstrate strategy seed-mediated space-confined self-assembly virus-like...

Metal halide perovskites have been successfully applied in a variety of fields such as LEDs, lasers and solar cells, thanks to their excellent optoelectronic properties. Capillary fibers can further expand the range perovskite applications at same time improve its stability by encapsulating inside capillary. However, high-quality film-coated hollow capillary yet be realized. Here, we introduce fast solvent exchange method which is used for preparation neat smooth films deposited on inner...

High-power InGaAs-on-Si RF pin photodetectors are demonstrated. These diodes dissipate upwards of 640 mW electrical power, have small-signal compression currents 91.4 mA at 200 MHz and 71.5 300 MHz, dark measured to be less than 10 nA.