A5039383990- Nanowire Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Ferroelectric and Negative Capacitance Devices
- Reproductive biology and impacts on aquatic species
- Aquaculture Nutrition and Growth
- Advanced Memory and Neural Computing
- Physiological and biochemical adaptations
- Electronic and Structural Properties of Oxides
- Integrated Circuits and Semiconductor Failure Analysis
- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Advanced Semiconductor Detectors and Materials
- Quantum and electron transport phenomena
- Semiconductor materials and interfaces
- Fish Ecology and Management Studies
- MXene and MAX Phase Materials
- Photonic and Optical Devices
- Genetic and Clinical Aspects of Sex Determination and Chromosomal Abnormalities
- Animal Behavior and Reproduction
- Chalcogenide Semiconductor Thin Films
- Circadian rhythm and melatonin
- Radio Frequency Integrated Circuit Design
- Magnetic properties of thin films
Lund University
2013-2024
Informa (Sweden)
2013-2024
Ericsson (Sweden)
2022-2023
Nanosc (Sweden)
2022
IBM Research - Zurich
2014-2019
Stockholm University
1991-2017
Nano Hydrophobics (United States)
2016
IBM (United States)
2014-2015
MAX IV Laboratory
2013
Utrecht University
1988
III–V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal organic chemical vapor deposition. Single crystal (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures containing constrictions, and cross junctions, well 3D stacked nanowires directly obtained epitaxial filling of lithographically defined oxide templates. The benefit TASE is exemplified the straightforward fabrication...
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to forefront of ultralow-power electronic systems. Maximizing potential application in memory devices or supercapacitors these materials requires a combined effort by community address technical limitations, which still hinder their application. Besides favorable intrinsic material properties, HfO2–ZrO2 face challenges regarding endurance, retention, wake-up effect, high...
InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and characterized electrical measurements transmission electron microscopy. Down-scaling of the insert thickness was limited because an observed sensitivity GaSb growth to presence In. By employing interrupts in between InAs steps it possible reach down 25 nm. Two-terminal devices show a diode behavior, where temperature-dependent indicate heterostructure barrier height 0.5 eV, which is identified as valence...
Photoconductors using vertical arrays of InAs/InAs(1-x)Sb(x) nanowires with varying Sb composition x have been fabricated and characterized. The spectrally resolved photocurrents are strongly diameter dependent peaks, which red-shifted diameter, appearing for thicker wires. Results from numerical simulations in good agreement the experimental data reveal that peaks due to resonant modes enhance coupling light into Through proper selection wire absorptance can be increased by more than 1...
We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube templates fabricated substrates varying crystallographic orientations, including nanocrystalline Si. The investigated epitaxially grown, single-crystalline, free from threading dislocations, with an orientation dimension directly given by the shape template. exhibit stable photoluminescence at room...
We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III–V templates made InAs, InP, GaAs. Influence temperature, V/III ratio, diameter are investigated in order investigate rate morphology. The range temperatures used for is very similar that planar due nature precursor decomposition. This makes optimization parameters important, more difficult than most other materials. Analysis...
Heterostructure nanowires have many potential applications due to the avoidance of interface defects by lateral strain relaxation. However, most heterostructure semiconductor suffer from persistent compositional grading, normally attributed dissolution growth species in common alloy seed particles. Although progress has been made for some material systems, binary combinations remain problematic interaction alloy. In this work we investigate formation interfaces InAs-GaAs heterostructures...
Antimonide semiconductors are suitable for low-power electronics and long-wavelength optoelectronic applications. In recent years research on antimonide nanowires has become a rapidly growing field, nano-materials have promising applications in fundamental physics research, tunnel field-effect transistors, detectors. this review, we give an overview of the field nanowires, beginning with description synthesis these nano-materials. Here summarize numerous reports nanowire growth, aim to...
We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment the heterostructure is exploited to allow for interband tunneling without a barrier, leading high on-current levels. report maximum drive current 310 μA/μm at <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">VDS</i> = 0.5 V. Devices with scaled gate oxides display transconductances up...
We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current 1750 kA/cm(2) at 0.50 V, peak 67 0.11 and peak-to-valley ratio (PVR) 2.1 are obtained room temperature. The density is comparable to that state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the investigated in this work do not rely heavy doping, which permits studies transport mechanisms simple transistor structures...
Resistive random access memory (RRAM) technologies based on non-volatile resistive filament redox switching oxides have the potential of drastically improving performance future mass-storage solutions. However, physico-chemical properties TiN bottom metal electrode (BME) can significantly alter (RS) behavior oxygen-vacancy RRAM devices, yet correlation between RS and HfOx/TiN interface remains unclear. Here, we establish this particular via detailed material electrical characterization for...
In this letter we report on high-frequency measurements vertically standing III−V nanowire wrap-gate MOSFETs (metal−oxide−semiconductor field-effect transistors). The transistors are fabricated from InAs nanowires that epitaxially grown a semi-insulating InP substrate. All three terminals of the defined by wrap around contacts. This makes it possible to perform vertical MOSFETs. We present S-parameter performed matrix consisting 70 MOSFETs, which have gate length about 100 nm. highest unity...
III-V semiconductors have so far predominately been employed for n-type transistors in high-frequency applications. This development is based on the advantageous transport properties and large variety of heterostructure combinations family semiconductors. In contrast, reports p-type devices with high hole mobility suitable complementary metal-oxide-semiconductor (CMOS) circuits low-power operation are scarce. addition, difficulty to integrate both n- same substrate without use complex buffer...
This part of the paper presents TCAD simulations InAs/Si lateral nanowire (NW) tunnel FET (TFET) with same geometry as fabricated device discussed in first part. In addition to band-to-band tunneling, trap-assisted tunneling (TAT) at and InAs/oxide interfaces was considered. A very good agreement is found between simulation results experimental transfer characteristics different devices. The confirm that subthreshold regime TFETs are entirely dominated by TAT. Due high concentration...
We demonstrate metalorganic vapor phase epitaxy of InAs1−xSbx nanowires (x=0.08–0.77) for applications in high-speed electronics and long-wavelength optical devices. The composition the InAsSb epilayers on same sample is independently determined using lab-setup high resolution x-ray diffraction, by making use size-dependent in-plane broadening nanowire Bragg peak. find that incorporation Sb into significantly higher than planar under growth conditions. Thermodynamic calculations indicate...
In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source drain resistances, an Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /HfO bilayer introduced in high- process. The nanowires exhibit high drive currents, up 1.25 A/mm, normalized circumference, current densities 34 MA/cm...
We have developed a self-aligned L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> = 55 nm In xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As MOSFET incorporating metal-organic chemical vapor deposition regrown n <sup xmlns:xlink="http://www.w3.org/1999/xlink">++</sup> source and drain regions, which enables record low on-resistance of 199 Ωμm. The regrowth process...
GaSb nanostructures integrated on Si substrates are of high interest for p-type transistors and mid-IR photodetectors. Here, we investigate the metalorganic chemical vapor deposition properties monolithically onto silicon-on-insulator wafers using template-assisted selective epitaxy. A degree morphological control allows with critical dimensions down to 20 nm. Detailed investigation growth parameters reveals that rate is governed by desorption processes an Sb surface layer and, in turn,...
A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective is presented. The variation in axial growth rate nanowires inside oxide nanotube templates studied as function diameter (20–140 nm), time (0–30 min), temperature (520–580 °C), V/III ratio (40–160), spacing (300–2000 and substrate crystal orientation. It found that the effective reduced at least by a factor two within compared to outside, detectable changes facet morphology. originates from different...
Coherent interconnection of quantum bits remains an ongoing challenge in information technology. Envisioned hardware to achieve this goal is based on semiconductor nanowire (NW) circuits, comprising individual NW devices that are linked through ballistic interconnects. However, maintaining the sensitive conduction and confinement conditions across intersections a nontrivial problem. Here, we go beyond characterization single device demonstrate one-dimensional (1D) transport InAs...
Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from coherent data recorded single objects. In this article we report results obtained homogeneous heterogeneous nanowires with diameter smaller than 100 nm, used CDI to retrieve information about deformation faults existing these wires. The also discusses influence stacking faults, create...
In this paper we present a 55 nm gate length <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As MOSFET with extrinsic transconductance of 1.9 mS/μm and on-resistance 199 Ωμm. The self-aligned is formed using metalorganic chemical vapor deposition regrowth highly doped source drain access regions. fabricated 140 devices shows low subthreshold swing 79 mV/decade, which attributed...