A5048945755- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Photonic and Optical Devices
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Advanced Memory and Neural Computing
- Silicon and Solar Cell Technologies
- Advanced Photonic Communication Systems
Forschungszentrum Jülich
2022-2025
Institute of Semiconductor Physics
2025
RWTH Aachen University
2025
Fully silicided source/drain Si gate-all-around (GAA) nanowire (NW) p-FETs with NW diameter of 5 nm are fabricated and characterized from room temperature (RT) down to 5.5 K. Thanks the improved electrostatics by scaled 3D GAA structure, close ideal transfer characteristics obtained at both RT K a sharp switching. Benefiting less defects in created implantation into silicide (IIS) process, band tail effects neutral scattering suppressed. Therefore, provide very low subthreshold swing SS 3.4...
Efficient computing in cryogenic environments, including classical von Neumann, quantum, and neuromorphic systems, is poised to transform big data processing. The quest for high-density, energy-efficient memories continues, with memory solutions still unclear. We present a Cryogenic Capacitorless Random Access Memory (C2RAM) cell using advanced Si technology, which enhances storage density through its scalability multistate capability. Remarkably, the C2RAM maintains over decade extended...
Abstract Artificial thalamic neurons offer significant potential for medical treatment and neuromorphic computing applications. Their implementation with CMOS technology typically requires a large number of transistors capacitors, leading to increased power consumption reduced integration density. This work presents an artificial relay neuron using only five identical ferroelectric Schottky barrier field‐effect (Fe‐SBFETs) based on silicon technology, forming double inverter sensing...
Abstract As transistors continue to shrink, the need replace silicon with materials of higher carrier mobilities becomes imperative. Group‐IV semiconductors, and particularly GeSn alloys, stand out for their high electron hole mobilities, making them attractive next‐generation electronics. While Ge p ‐channel devices already possess a mobility, here focus is on enhancing n transistor performance by utilizing superior mobility as channel material. Vertical gate‐all‐around nanowire (GAA NW)...
The effect of band edge states is the critical issue for cryogenic CMOS, which worsens performance conventional MOSFETs at temperature (Cryo-T) with saturated subthreshold swing (SS), large transition region (inflection phenomenon) and limited mobility. To address these problems, we fabricated gate-all-around (GAA) Si nanowire (NW) using fully silicided source/drain dopant segregation. significantly suppressed this technology. Thus, SS, effective average $\mathrm{SS_{th}}$ transconductance...
Vertical gate-all-around (GAA) nanowire (NW) FETs based on Si compatible group IV GeSn alloys are presented. The NW devices with diameter of 25 nm show an almost ideal subthreshold swing (SS) 65 mV/dec at 300 K. increased Sn content in the channel offers a larger population electrons <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\Gamma$</tex> -valley that exhibit lower effective mass and mobility. This is confirmed by comparison two...
As transistor scaling advances, the necessity to replace silicon with materials possessing superior carrier mobilities intensifies. Group-IV semiconductors, a particular emphasis on GeSn alloys, are distinguished by their exceptional electron and hole mobilities, rendering them prime candidates for advanced electronic applications. The vertical gate-all-around (GAA) nanowire emerges as pivotal device architecture, offering enhanced electrostatic control minimized physical footprint. This...
Abstract Efficient computing in cryogenic environments, encompassing classical von Neumann architectures, advanced quantum and neuromorphic systems, holds the potential to revolutionize big data processing. As demand for high storage density energy-efficient memories grows, absence of a clear solution memory remains challenge. Here, we present capacitorless Random Access Memory (C 2 RAM) utilizing Si technology. This innovation is positioned reshape computing, with its scalability capacity...