Yuanyuan Pan

ORCID: 0000-0003-1368-2496
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Graphene research and applications
  • Supercapacitor Materials and Fabrication
  • Advancements in Battery Materials
  • Advancements in Semiconductor Devices and Circuit Design
  • Nanopore and Nanochannel Transport Studies
  • Semiconductor materials and devices
  • Advanced Thermoelectric Materials and Devices
  • Chalcogenide Semiconductor Thin Films
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Photocatalysis Techniques
  • Advanced Cellulose Research Studies
  • Advanced Memory and Neural Computing
  • Fuel Cells and Related Materials
  • ZnO doping and properties
  • Thin-Film Transistor Technologies
  • Advanced battery technologies research
  • Spectroscopy and Chemometric Analyses
  • Advanced Sensor and Energy Harvesting Materials
  • Silicon Carbide Semiconductor Technologies
  • Electronic and Structural Properties of Oxides
  • Electrocatalysts for Energy Conversion
  • Molecular Junctions and Nanostructures
  • Nanowire Synthesis and Applications

Qingdao University
2022-2025

Xihua University
2025

Wannan Medical College
2024

PLA Information Engineering University
2023

Shandong Normal University
2023

Sichuan University
2022

Xiangtan University
2022

China University of Petroleum, East China
2019-2021

Peking University
2016-2020

East China University of Technology
2020

Abstract Providing sufficient driving force for charge separation and transfer (CST) is a critical issue in photoelectrochemical (PEC) energy conversion. Normally, the derived mainly from band bending at photoelectrode/electrolyte interface but negligible bulk. To boost bulky force, we report rational strategy to create effective electric field via controllable lattice distortion bulk of semiconductor film. This concept verified by lithiation classic TiO 2 (Li-TiO ) photoelectrode, which...

10.1038/s41467-020-15993-4 article EN cc-by Nature Communications 2020-05-01

Electrocatalytic hydrogen evolution reaction, the cornerstone of emerging economy, can be essentially facilitated by robustly heterostructural electrocatalysts. Herein, we report a highly active and stably electrocatalyst consisting NiCoP nanowires decorated with CoP nanoparticles on nickel foam (NiCoP-CoP/NF) for effective evolution. The are strongly interfaced producing abundant electrocatalytically sites. Combined integrated catalyst design, NiCoP-CoP/NF affords remarkable performance in...

10.1021/acsami.9b00592 article EN ACS Applied Materials & Interfaces 2019-04-05

Despite their promising potential, the real performance of lithium-sulfur batteries is still heavily impeded by notorious shuttle behavior and sluggish conversion polysulfides. Complex structures with multiple components have been widely employed to address these issues virtue strong polarity abundant surface catalytic sites. Nevertheless, tedious constructing procedures high cost materials make exploration alternative high-performance sulfur hosts increasingly important. Herein, we report...

10.1021/acsnano.0c02294 article EN ACS Nano 2020-04-30

Novel interconnected PVA-based hydrogels with controlled porous structure prepared by freezing/thawing and porogen technique are presented in this study.

10.1039/c6ra03620a article EN RSC Advances 2016-01-01

Abstract Due to high carrier mobility and excellent air stability, emerging 2D semiconducting Bi 2 O Se is attracting much attention as a potential channel candidate for the next‐generation field effect transistor (FETs). Although fabricated bilayer (BL) few layers FETs exhibit large current on/off ratio (>10 6 ) near‐ideal subthreshold swing value (≈65 mV dec −1 ), performance limit of ultrashort FET obscure. Here ballistic upper sub 10 nm BL metal‐oxide‐semiconductor (MOSFETs) simulated...

10.1002/aelm.201800720 article EN Advanced Electronic Materials 2019-02-04

Abstract The merging 2D semiconductor tellurene (2D Group‐VI tellurium) is a possible channel candidate for post‐silicon field‐effect transistor (FETs) due to its high carrier mobility, drive current, and excellent air stability. performance limits of sub‐5‐nm ML metal‐oxide‐semiconductor FETs (MOSFETs) are explored by employing exact ab initio quantum transport simulations. An optimized p‐type MOSFET meets both the (along armchair zigzag directions) low power direction) requirements...

10.1002/aelm.201900226 article EN Advanced Electronic Materials 2019-05-28

Monolayer (ML) transition-metal dichalcogenides are considered as promising channel materials in next-generation transistors. Using ab initio energy band calculations and more reliable quantum transport simulations, we study the interfacial properties of ML MoSe2–metal interfaces (metals = Al, Ag, Pt, Cr, Ni, Ti). Weak or medium adsorption is found between MoSe2 Pt surfaces with structure preserved, while strong Ti, Cr destroyed. The two methods give similar polarity height Schottky barriers...

10.1021/acs.jpcc.6b02696 article EN The Journal of Physical Chemistry C 2016-06-06

A vertically aligned carbon nanotube array structure enhances water flux in polyethersulfone ultra-filtration membranes.

10.1039/c4ta02119c article EN Journal of Materials Chemistry A 2014-01-01

Abstract Monolayer (ML) WS 2 is a promising material to be the channel of nanoscale field‐effect transistors (FETs). In ML FETs, interfacial properties between and electrodes significantly affect device performance, due possible existence Schottky barriers at interface. this paper, electronic transport both lateral vertical interfaces six common metals calculated (Sc, Ti, Ag, Cu, Au, Pt) by density functional theory quantum simulation. n ‐type contact exists with electron barrier height...

10.1002/adts.201900001 article EN Advanced Theory and Simulations 2019-02-20

As one of the thinnest forms semiconducting silicon, monolayer (ML) silicane has not only excellent gate electrostatics and carrier transport ability, but also compatibility with well-established silicon-based technology. We explore device performance limits sub-5-nm ML metal-oxide-semiconductor field-effect transistors (MOSFETs) by applying ab initio quantum simulations. The on-state current, effective delay time, power-delay product optimized n-type p-type MOSFETs can well or nearly meet...

10.1103/physrevapplied.14.024016 article EN Physical Review Applied 2020-08-07

In order to solve the problem of spontaneous combustion coal gangue, a gangue fire-extinguishing material gel–foam was developed. The foaming agent screened by Waring blender method with varying foam amounts, and superabsorbent stabilizer synthesized free radical polymerization. Moreover, used in mountain field practice. results showed that when mass fraction sodium dodecyl sulfonate coconut oil amide propyl betaine 0.6% 4:6, amount as high 1500 mL. When ratio chitosan acrylic acid 1:6,...

10.3390/en15020557 article EN cc-by Energies 2022-01-13

MXenes are attractive candidates in the fields of surface-enhanced Raman scattering (SERS) and catalysis. However, most current studies on based blocks nanosheets, limiting their SERS catalytic properties. Herein, we have prepared 3D MXene hollow spheres wrapped with silver nanoparticles (Ti3C2–AgNP HSs) using a sacrificial template method, which exhibits excellent sensitivity low detection limit due to good light-trapping capability sphere strong localized surface plasmon resonance (LSPR)...

10.1021/acs.jpclett.3c02379 article EN The Journal of Physical Chemistry Letters 2023-10-02

Owing to its promising electronic application of monolayer (ML) MoS2, ML MoS2–metal contacts have been widely explored. The experiments reveal a very strong Fermi level pinning, and the corresponding pinning factor is about 0.1 [Nature 2018, 557, 696–700], but all existing calculations give larger 0.3. Such an apparent discrepancy attributed defects in samples. In this paper, Schottky barriers are reexamined pristine MoS2 field-effect transistors (FETs) with series metal electrodes (Au, Pt,...

10.1021/acsanm.9b00200 article EN ACS Applied Nano Materials 2019-07-22

Sediment erosion in turbine components presents a major challenge to the reliable operation of pumped storage power plants, particularly sediment-laden rivers. While extensive research has been conducted on hydraulic machinery erosion, studies focusing combined effects sediment particle size and concentration within runner region pump turbines remain limited. To bridge this gap, study investigates influence characteristics patterns deposition mechanisms pump-turbine runners through...

10.3390/w17071093 article EN Water 2025-04-06

Owing to their few lateral dangling bonds and enhanced gate electrostatics, two-dimensional semiconductors have attracted much attention for the fabrication of channels in next-generation field-effect transistors (FETs). Herein, combining first-principle band structure calculations with more precise quantum transport simulations, we systematically explore interface properties between monolayer (ML) indium selenide (InSe) a sequence common electrodes an FET. The ML InSe is damaged by Sc, Au,...

10.1039/c8cp04615h article EN Physical Chemistry Chemical Physics 2018-01-01
Coming Soon ...