A5089706975- 2D Materials and Applications
- Graphene research and applications
- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Advanced Memory and Neural Computing
- Molecular Junctions and Nanostructures
- Thin-Film Transistor Technologies
- Advanced Battery Materials and Technologies
- Chalcogenide Semiconductor Thin Films
- Perovskite Materials and Applications
- Advancements in Battery Materials
- Quantum and electron transport phenomena
- Quantum Dots Synthesis And Properties
- Carbon Nanotubes in Composites
- Catalysis and Oxidation Reactions
- Ferroelectric and Negative Capacitance Devices
- Cryptographic Implementations and Security
- Integrated Circuits and Semiconductor Failure Analysis
- Organic and Molecular Conductors Research
- Proteins in Food Systems
- Ga2O3 and related materials
- Thermal properties of materials
- Advanced Steganography and Watermarking Techniques
Peking University
2020-2025
Huzhou Central Hospital
2024
Huzhou University
2024
Shanghai Maritime University
2022
University of Hong Kong
2020
Beijing University of Posts and Telecommunications
2018-2019
Shenyang Agricultural University
2018
Shenzhen University
2016-2017
Shaanxi University of Technology
2016
Northeast Agricultural University
2015
Monolayer Bi<sub>2</sub>O<sub>2</sub>Se is a promising post-silicon-era semiconductor candidate because of its simultaneous excellent device performance and high ambient stability.
Phosphorene is a promising channel material for next-generation electronics, due to its unique in-plane anisotropy, large density of states near the valence-band maximum, and high carrier mobility. Using $a\phantom{\rule{0}{0ex}}b$ $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o$ quantum transport simulations, authors investigate very small, double-gated MOSFETs based on monolayer phosphorene. It predicted that these...
Abstract Since Si‐based Moore's law is physically limited, 2D semiconductors are proposed as successors to continue shrinking the transistor size for more Moore electronics. However, limited by experimental technology bottlenecks, theoretical predicted superiorities of transistors over state‐of‐the‐art Si have been lacking concrete evidence a decade. In this review, recent exciting breakthroughs presented, including gate length miniaturization sub‐1 nm limit, electrode contact optimization...
Abstract Due to high carrier mobility and excellent air stability, emerging 2D semiconducting Bi 2 O Se is attracting much attention as a potential channel candidate for the next‐generation field effect transistor (FETs). Although fabricated bilayer (BL) few layers FETs exhibit large current on/off ratio (>10 6 ) near‐ideal subthreshold swing value (≈65 mV dec −1 ), performance limit of ultrashort FET obscure. Here ballistic upper sub 10 nm BL metal‐oxide‐semiconductor (MOSFETs) simulated...
Single-walled carbon nanotubes (CNTs) have been considered as a promising semiconductor to construct transistors and integrated circuits in the future owing their ultrathin channel thickness ultrahigh injection velocity. Although 5 nm gate-length CNT field-effect transistor (FET) has already experimentally fabricated demonstrates excellent device performance, potential or constraint factors on performance not explored revealed. Based benchmark of between experimental simulated FETs, we use...
High-electron-mobility group III–V compounds have been regarded as a promising successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide (GaAs) is an outstanding member of the family due its advantage both good n- and p-type device performance. Monolayer (ML) GaAs limit form ultrathin GaAs. Here, hydrogenated ML (GaAsH2) FET simulated by ab initio quantum-transport methods. The GaAsH2 metal–oxide–semiconductor FETs (MOSFETs) can well satisfy on-state current,...
Abstract Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron mobility µ e than silicon but suffers from much lower hole h ( / = 80), thus unsuited to CMOS application with single material. Through accurate ab initio quantum‐transport simulations, performance gap between NMOS and PMOS is significantly narrowed predicted even vanished in sub‐2‐nm‐diameter gate‐all‐around...
The effect of the interaction between myofibrillar protein (MP) and heat-induced soy isolates (SPI) on gel properties was examined. To enhance MP SPI, SPI subjected to thermal treatments at 60, 80, 95 °C. results showed that hydrophobic interactions played most important role in MP-heated (HSPI) gels. Hydrogen bonds an stabilizing mixed gels, but this decreased with increasing heat treatment temperature SPI. Disulfide were not a significant force HSPI-MP enhanced significantly (P < 0.05) by...
Abstract Background Children and older adults with coronavirus disease 2019 (COVID-19) display a distinct spectrum of severity yet the risk factors aren’t well understood. We sought to examine expression pattern angiotensin-converting enzyme 2 (ACE2), cell-entry receptor for severe acute respiratory syndrome (SARS-CoV-2), role lung progenitor cells in children patients. Methods retrospectively analyzed clinical features cohort 299 patients COVID-19. The distribution ACE2 were systematically...
The gate-all-around (GAA) $\mathrm{Si}$ nanowire (NW) field-effect transistor (FET) is considered one of the most promising successors current mainstream fin FET (FinFET) owing to its better electrostatic gate control. Experimentally, diameter NWs has been scaled down 1 nm. In this paper, performance limit GAA NWFET with a 1-nm investigated by utilizing ab initio quantum transport simulations. We prove that electrical conduction concentrated in core ultranarrow wire channel. minimum length...
Two-dimensional \ensuremath{\alpha}-${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ has drawn broad attention due to its high photoresponse and unique room-temperature interlocked in-plane out-of-plane ferroelectricity with an ultralow switching electric field. Here, we investigate the in a lateral monolayer (ML) p-i-n junction by using ab initio quantum transport simulations. The maximum photoresponses of are up 69.2 31.6 mA/W for ferroelectric wurtzite zincblende phases (shortly named WZ' ZB')...
Since silicon-based field-effect transistors (FETs) are approaching their scaling limit, two-dimensional (2D) semiconductors have been proposed as alternative channel materials. Recently, air-stable 2D trilayer (TL) MoTe2 FETs with a 4 nm gate length fabricated experimentally. To explore the device performance limit of monolayer FETs, we simulate sub-5 double-gate (DG) ML by using ab initio quantum transport method. We find that when taking negative capacitance technology and underlap into...
The performance limit of the sub-5 nm monolayer (ML) indium phosphide (InP) FETs is explored. I on , τ and PDP ML InP could meet ITRS demands for high-performance/low-power devices until gate length reduced to 2/4 nm.
Complementary metal oxide semiconductor (CMOS) devices require both n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs), but achieving types that meet the requirements of International Technology Roadmap for Semiconductors (ITRS) at ultrashort gate lengths is a challenge. Recently synthesized two-dimensional crystal ${\mathrm{WSi}}_{2}{\mathrm{N}}_{4}$ exhibits high theoretical hole electron carrier mobilities. In this study, we investigate performance limits...
Recently synthesized two-dimensional (2D) van der Waals (vdW) ferromagnets, ${\mathrm{Fe}}_{x}{\mathrm{Ge}\mathrm{Te}}_{2}$ (x = 4 and 5), have attracted great attention due to their room-temperature Curie temperature. By using ab initio noncollinear-spin quantum transport simulations, we predict a monotonic increasing tendency of the tunneling magnetoresistance (TMR) with \ensuremath{\theta} (the angle between spins two electrodes) in...
Ultrathin oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, ultrathin indium (In2O3) field-effect (FETs) with thicknesses down to 0.4 nm exhibit an extremely high drain current (104 μA/μm) transconductance (4000 μS/μm). Here, we employ ab initio quantum transport simulation investigate the performance limit of sub-5 gate length (Lg) In2O3 FETs. Based on International Technology...