A5000097979- Nanowire Synthesis and Applications
- 2D Materials and Applications
- Quantum Dots Synthesis And Properties
- Photonic and Optical Devices
- Graphene research and applications
- Chalcogenide Semiconductor Thin Films
- Perovskite Materials and Applications
- ZnO doping and properties
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Synthesis and Catalytic Reactions
- MXene and MAX Phase Materials
- Semiconductor materials and interfaces
- Ga2O3 and related materials
- Plasmonic and Surface Plasmon Research
- Organic Light-Emitting Diodes Research
- Cyclopropane Reaction Mechanisms
- Catalytic C–H Functionalization Methods
- Sulfur-Based Synthesis Techniques
- Asymmetric Synthesis and Catalysis
- Synthetic Organic Chemistry Methods
- Gold and Silver Nanoparticles Synthesis and Applications
- Asymmetric Hydrogenation and Catalysis
Peking University
2016-2025
Collaborative Innovation Center of Quantum Matter
2016-2025
Shanghai Innovative Research Center of Traditional Chinese Medicine
2025
King University
2025
Hohai University
2023-2024
Robert Bosch (Germany)
2023
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics
2018-2022
Biolog (United States)
2011
Prince of Wales Hospital
2010
National Institute for Materials Science
2010
Miniaturizing spectrometers Spectroscopy is a ubiquitous characterization tool spanning most scientific and many industrial disciplines. Most handheld are based on tabletop optical components, which limits the scale to these can be shrunk. To address desire for miniaturized with micrometer-scale (and smaller) footprint, Yang et al. developed such microspectrometer single, compositionally engineered nanowire. This result practical step forward use of other light-sensitive nanomaterials...
Ultrafast-response (20 μs) UV detectors, which are visible-blind and self-powered, in devices where an n-type ZnO nanowire partially lies on a p-type GaN film, demonstrated. Moreover, CdSe-nanowire red-light detector powered by nanoscale ZnO/GaN photovoltaic cell is also demonstrated, extends the device function to selective multiwavelength photodetector shows of optical logical AND gate. Detailed facts importance specialist readers published as "Supporting Information". Such documents...
Single-crystalline CdS nanobelts demonstrate excellent field-emission properties for the first time. Individual are assembled high-performance visible-light photodetectors with an ultrafast response time of ∼20 μs and ultrahigh quantum efficiency 1.9 × 107%. The results suggest a high potential utilizing these as optoelectronic nanodevices.
Graphene and other layered materials, such as transition metal dichalcogenides, have rapidly established themselves exceptional building blocks for optoelectronic applications because of their unique properties atomically thin nature. The ability to stack them into van der Waals (vdWs) heterostructures with new functionality has opened a platform fundamental research device applications. Nevertheless, near-infrared (NIR) photodetectors based on semiconductors are rarely realized. In this...
Phosphorene is a promising channel material for next-generation electronics, due to its unique in-plane anisotropy, large density of states near the valence-band maximum, and high carrier mobility. Using $a\phantom{\rule{0}{0ex}}b$ $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o$ quantum transport simulations, authors investigate very small, double-gated MOSFETs based on monolayer phosphorene. It predicted that these...
van der Waals materials possess an innate layer degree of freedom and thus are excellent candidates for exploring emergent two-dimensional ferroelectricity induced by interlayer translation. However, despite being theoretically predicted, experimental realization this type is scarce at the current stage. Here, we demonstrate robust sliding in semiconducting 1T^{'}-ReS_{2} multilayers via a combined study theory experiment. Room-temperature vertical observed with number N≥2. The electric...
We demonstrate single-mode laser emission in single nanowires. By folding a 200 nm diameter CdSe nanowire to form loop mirrors, around 738 wavelength is obtained with line width of 0.12 and low threshold. The mode selection realized by the vernier effect coupled cavities folded nanowire. In addition, structure makes it possible tune cavity, opening an opportunity realize tunable laser.
Monolayer molybdenum disulphide (MoS2) has attracted much attention, due to its attractive properties, such as two-dimensional direct bandgap, valley-selective circular dichroism, and valley Hall effect. However, some of fundamental physical parameters, e.g. refractive index, have not been studied in detail because measurement difficulties. In this work, we synthesized highly crystalline monolayer MoS2 on SiO2/Si substrates via chemical vapor deposition (CVD) method devised a measure their...
Calculation and experimental observation of two-dimensional multiferroic CuCrP<sub>2</sub>S<sub>6</sub>.
Semiconductor nanowires (or other wire-like nanostructures, including nanoribbons and nanobelts) synthesized by bottom-up chemical growth show single-crystalline structures, excellent geometric uniformities, subwavelength transverse dimensions, relatively high refractive indices, making these one-dimensional structures ideal optical nanowaveguides with tight confinement low scattering loss. When properly pumped or electrical means, lasing oscillation can be readily established inside...
Among the Mo- and W-based two-dimensional (2D) transition metal dichalcogenides, MoTe2 is particularly interesting for phase-engineering applications, because it has smallest free energy difference between semiconducting 2H phase metallic 1T′ phase. In this work, we reveal that, under proper circumstance, Mo Te atoms can rearrange themselves to transform from a polycrystalline into single-crystalline in large scale. We manifest mechanisms of solid-to-solid transformation by conducting...
Self-powered photodetectors based on CdSe nanobelt (NB)/graphene Schottky junctions are fabricated and investigated. Typically such exhibit good rectifying behavior without light illumination. The on/off ratio is more than 1 × 105 when the voltage changes from −1 to V. Under zero bias, typically show high photosensitivity (∼3.5 105), which defined as (Iphoto − Idark)/Idark, above-band-gap irradiation. 1000 Hz switching frequency, response recovery times of photodetector 82 179 μs,...
Tungsten ditelluride (WTe2) is a semi-metallic layered transition metal dichalcogenide with stable distorted 1T phase. The reduced symmetry of this system leads to in-plane anisotropy in various materials properties. We have systemically studied the Raman modes few-layer and bulk WTe2 by angle-dependent polarized spectroscopy (ADPRS). Ten are clearly resolved. Their intensities show periodic variation sample rotating. identify symmetries detected quantitatively analyzing ADPRS results based...
The group IV-VI compound tin selenide (SnSe) has recently attracted particular interest due to its unexpectedly low thermal conductivity and high power factor shows great promise for thermoelectric applications. With an orthorhombic lattice structure, SnSe displays intriguing anisotropic properties the symmetry of puckered in-plane structure. When materials, such as SnSe, have decreased dimensionality, their conversion efficiency may be improved increased conductivity. Therefore, it is...
Plasmonic nanolasers are a new class of amplifiers that generate coherent light well below the diffraction barrier bringing fundamentally capabilities to biochemical sensing, super-resolution imaging, and on-chip optical communication. However, debate about whether metals can enhance performance lasers has persisted due unavoidable fact metallic absorption intrinsically scales with field confinement. Here, we report plasmonic extremely low thresholds on order 10 kW cm-2 at room temperature,...
Wavelength tunability of lasers is one the most important parameters for achieving practical applications such as optical communication, environmental monitoring, and spectroscopy analysis. A wide-wavelength tunable laser demonstrated on a single non-doped CdSe nanowire (NW) without changing pumping intensity position, but by simply gradually cutting NW shorter instead. The corresponding mechanism large wavelength shifts determined absorption-emission-absorption (AEA) process in polar NWs....
Field‐effect transistors (FETs) fabricated with monolayer (ML) molybdenum disulfide (MoS 2 ) have shown promising potential as a candidate of next‐generation nanoelectronic devices. The first first‐principles quantum transport investigation the ballistic performance upper limit sub‐10 nm ML MoS FETs Ti electrode is provided. An extraordinary small subthreshold swing obtained by taking advantage dual gate (DG) configuration. limits DGFETs are comparable best existing advanced silicon FETs. 10...
We systematically study the high-resolution and polarized Raman spectra of multilayer (ML) ${\mathrm{MoTe}}_{2}$. The layer-breathing (LB) shear (C) modes are observed in ultralow-frequency region, which used to quantitatively evaluate interlayer coupling ML ${\mathrm{MoTe}}_{2}$ based on linear chain model, only nearest is considered. three different substrates verify negligible substrate effect phonon frequencies Ten excitation energies measure high-frequency $N$-layer ($N\mathrm{L}...
Abstract Engineering the substrate of 2D transition metal dichalcogenides can couple quasiparticle interaction between material and substrate, providing an additional route to realize conceptual quantum phenomena novel device functionalities, such as realization a 12‐time increased valley spitting in single‐layer WSe 2 through interfacial magnetic exchange field from ferromagnetic EuS band‐to‐band tunnel field‐effect transistors with subthreshold swing below 60 mV dec −1 at room temperature...
A high-performance NOT logic gate (inverter) was constructed by combining two identical n-channel metal−semiconductor field-effect transistors (MESFETs) made on a single CdS nanowire (NW). The inverter has voltage gain as high 83, which is the highest reported so far for inverters one−dimensional nanomaterials. MESFETs used in circuit show excellent transistor performance, such on/off current ratio (∼107), low threshold (∼−0.4 V), and subthreshold swing (∼60 mV/dec). With assembly of three...
Nano-Schottky diodes and nanometal-semiconductor field-effect transistors (MESFETs) on single CdS nanobelts (NBs) have been fabricated studied. The Au/CdS NB Schottky very low reverse current density ( approximately 3.0 x 10-5 A.cm-2 at -10 V bias) the highest on/off ratio (approximately 108) reported so far for nano-Schottky diodes. MESFETs exhibit n-channel normally (depletion) mode, threshold voltage -1.56 V), high transconductance 3.5 microS), subthreshold swing 45 mV/dec), 2...
High quality n-type CdS nanobelts (NBs) were synthesized via an in situ indium doping chemical vapor deposition method and fabricated into field effect transistors (FETs). The electron concentrations mobilities of these NBs are around (1.0×1016–3.0×1017)∕cm3 100–350cm2∕Vs, respectively. An on-off ratio greater than 108 a subthreshold swing as small 65mV∕decade obtained at room temperature, which give the best performance nanowire/nanobelt FETs reported so far. NB∕p+-Si heterojunction light...