A5100608559- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Perovskite Materials and Applications
- Quantum and electron transport phenomena
- 2D Materials and Applications
- Smart Grid and Power Systems
- Software Reliability and Analysis Research
- Electric Power System Optimization
- Protein Tyrosine Phosphatases
- Synthesis and properties of polymers
- Embedded Systems and FPGA Applications
- Advanced Memory and Neural Computing
- Embedded Systems and FPGA Design
- Environmental Quality and Pollution
- Internet Traffic Analysis and Secure E-voting
- Risk and Safety Analysis
- Advanced Combustion Engine Technologies
- Hormonal Regulation and Hypertension
- Management of metastatic bone disease
- Advanced Bandit Algorithms Research
- Medical Imaging and Analysis
- Nanowire Synthesis and Applications
- Blasting Impact and Analysis
- Hip and Femur Fractures
Peking University
2009-2025
China National Nuclear Corporation
2023
Bank of China
2022
Fudan University
2022
China Geological Survey
2022
Xiangya Hospital Central South University
2022
Central South University
2022
Imperial College London
2021
Qingdao University
2017
Affiliated Hospital of Qingdao University
2017
Abstract Engineering the substrate of 2D transition metal dichalcogenides can couple quasiparticle interaction between material and substrate, providing an additional route to realize conceptual quantum phenomena novel device functionalities, such as realization a 12‐time increased valley spitting in single‐layer WSe 2 through interfacial magnetic exchange field from ferromagnetic EuS band‐to‐band tunnel field‐effect transistors with subthreshold swing below 60 mV dec −1 at room temperature...
We experimentally demonstrate the direct-to-indirect bandgap transition of monolayer MoS 2 under hydrostatic pressure.
Integrating metallic halide perovskites with established modern semiconductor technology is significant for promoting the development of application-level optoelectronic devices. To realize such devices, exploring growth dynamics and interfacial carrier deposited on core materials essential. Herein, we report incommensurate heteroepitaxy highly oriented single-crystal cesium lead bromide (CsPbBr3) c-wurtzite GaN/sapphire substrates atomically smooth surface uniform rectangular shape by...
Abstract Optoelectronic synapses are currently drawing significant attention as fundamental building blocks of neuromorphic computing to mimic brain functions. In this study, a two‐terminal synaptic device based on doped PdSe 2 flake is proposed imitate the key neural functions in an optical pathway. Due wavelength‐dependent desorption oxygen clusters near intrinsic selenide vacancy defects, photodetector achieves high negative photoresponsivity −7.8 × 10 3 A W −1 at 473 nm and positive 181...
Lead halide perovskites exhibit good performance in room-temperature exciton–polariton lasers and efficient flow of polariton condensates. Shaping directing condensates by confining the potential is essential for polariton-based optoelectronic devices, which have seldom been explored based on perovskite materials. Here, we investigate trapping polaritons micron-sized CsPbBr3 flakes embedded a microcavity varying negative detuning energy (from −36 to −172 meV) at room temperature. The...
Steady-state photoluminescence (PL) and time-resolved spectroscopy are employed to study near-band edge excitonic emission lines in an aluminum nitride (AlN) film over a range of temperatures. The thermal quenching the neutral silicon-bound exciton (Si0X) peak AlN is observed, which caused by thermally activated processes from Si0X two types free (Γ1 Γ5), along with two-electron satellite (TES) transition as competing pathway. Among these, activation process higher-energy Γ1 state...
Different types of photodiode have been characterized with respect to uniformity, linearity, stability responsivity and temperature coefficient at several wavelengths between 257 nm 799 based on cryogenic radiometry intensity stabilized lasers. The Hamamatsu S1337 was found be the best suited for use as a high accuracy transfer standard both visible UV spectral regions. For low-level radiant power measurement, this kind can calibrated via radiometer total uncertainty low ±0,02% in ±0,25% UV.
Staggered AlGaN quantum wells (QWs) are designed to enhance the transverse-electric (TE) polarized optical emission in deep ultraviolet (DUV) light- emitting diodes (LED). The polarization properties of conventional and staggered QWs investigated by a theoretical model based on k·p method as well photoluminescence (PL) measurements. Based an analysis valence subbands momentum matrix elements, it is found that with step-function-like Al content offers much stronger TE comparison from QWs....
High-quality charge-transfer complex AgTCNQ nanowires have been successfully synthesized by a facile nanoelectrochemical approach utilizing carbon nanotube (CNT) electrodes. These diameters of 30–80 nm and lengths up to several tens micrometers, exhibit remarkable electrical switching bistability. The uniform high aspect ratio nature originates from the one-dimensional structural feature ultrasmall surface area CNTs. Detailed facts importance specialist readers are published as "Supporting...
Abstract We report the enhancement of polarization and internal quantum efficiency (IQE) deep-UV LEDs by evaporating Al nanoparticles on device surface to induce localized plasmons (LSPs). The is improved due part TM emission turns into TE through LSPs coupling. significantly enhanced IQE attributed coupling, which suppress participation delocalized dissociated excitons non-radiative recombination process.
The degree of freedom (DOF) the $K$ (${K}^{\ensuremath{'}}$) valley in transition-metal dichalcogenides, especially molybdenum disulfide (${\mathrm{MoS}}_{2}$), offers an opportunity for next-generation valleytronics devices. In this work, DOF multilayer ${\mathrm{MoS}}_{2}$ is studied by means photon wavelength dependent circular photogalvanic effect (CPGE) at room temperature upon a strong external out-of-plane electric field induced ionic liquid (IL) gate, which breaks spatial-inversion...
The anisotropic extraction dependence of polarized light on propagation path in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated by simulations and photoluminescence (PL) measurements. Theoretical calculations based k⋅p approximation Monte Carol ray tracing indicate that there are two kinds sources with different angular distributions ~280 nm LEDs, s-polarized (spherical-shaped) p-polarized (dumbbell-shaped) sources, which have behaviors. It found the total...
Spectrally distinguished spin relaxation dynamics in a single GaN/Al0.1Ga0.9N quantum well was investigated by time-resolved Kerr rotation spectrum at room temperature. Three processes were photon energy upon the excitation being resonated with bandgap of various layers. It is observed that electron time 7 ps GaN much shorter than 140 an Al0.1Ga0.9N barrier layer due to considerable polarization electric field heterointerface. For electrons bulk and Al0.1Ga0.9N, dominant role electron–photon...
According to the strong inertia and long time delay characteristics in temperature control system of polymerizing kettle used production polyvinyl chloride paste resin, resisting integral saturation PID control, feed-forward Smith prediction are integrated into traditional cascade strategy for research. After that producing process resin is described, a method presented detail. Finally proposed validated on base simulation.
The cardinality constrained mean–variance (CCMV) portfolio selection model aims to identify a subset of the candidate assets such that constructed has guaranteed expected return and minimum variance. By formulating this as mixed-integer quadratic program (MIQP), exact solution can be solved by branch-and-bound algorithm. However, computational efficiency is central issue in time-sensitive investment due its NP-hardness properties. To accelerate speeds CCMV optimization problems, we develop...
The transition from bound exciton to free and exciton–phonon interaction in an AlN epilayer have been investigated by time resolved deep ultraviolet photoluminescence spectroscopy. Based on the analysis of energy position (S-shaped dependence with temperature), integrated intensity as well decay time, main X peak located at 6.06 eV 7.7 K is assigned originate radiative recombination excitons some unintentionally doped Si or O impurities. While other two peaks lower side should be exciton's...